Abstract
Electrical parameters of high-K based single gate nanoscale MOSFET is analytically computed considering the cylindrical geometry of the device. The paper’s novelty lies in the consideration of practical geometry of the channel rather than conventional ideal rectangular one; for which drain current, transconductance, quantum capacitance, subthreshold swing and DIBL are calculated using Green’s function formalism under the ballistic limit. Results are compared with that obtained for identical input parameters when conventional low-K dielectric is used. Thickness of the cylindrical channel is tailored within 10 nm to analyze the variation of device parameters; and this tuning is experimentally possible as cylindrical geometry is considered instead of conventional rectangular potential profile. Remarkable improvements are obtained by virtue of lower subthreshold swing and DIBL; and lower channel thickness speaks in favor of higher transconductance and quantum capacitance.
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Bhowmick, S., Chakraborty, D., Deyasi, A. (2019). Computation of Electrical Parameters for Single-Gate High-K Nanoscale MOSFET with Cylindrical Geometry. In: Chattopadhyay, S., Roy, T., Sengupta, S., Berger-Vachon, C. (eds) Modelling and Simulation in Science, Technology and Engineering Mathematics. MS-17 2017. Advances in Intelligent Systems and Computing, vol 749. Springer, Cham. https://doi.org/10.1007/978-3-319-74808-5_6
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DOI: https://doi.org/10.1007/978-3-319-74808-5_6
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