Abstract
Theoretical computation is performed on the electrical performance of the double well resonant tunneling diode for different quantum sizes of the constituent layers, Self-consistency technique is adopted for simulation to determine the oscillating behavior of the current density, and high doping is considered at the contact ends. Two different set of dimensions are taken for analysis, and comparatives study speaks in favor of lower barrier dimension for higher current density; whereas larger layer widths gives consistent flat response. Temperature variation is also considered for practical application in nanoelectronic circuit.
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Karmakar, B., Lodh, R., Biswas, P., Ghosal, S., Deyasi, A. (2019). Computation of Current Density in Double Well Resonant Tunneling Diode Using Self-consistency Technique. In: Chattopadhyay, S., Roy, T., Sengupta, S., Berger-Vachon, C. (eds) Modelling and Simulation in Science, Technology and Engineering Mathematics. MS-17 2017. Advances in Intelligent Systems and Computing, vol 749. Springer, Cham. https://doi.org/10.1007/978-3-319-74808-5_5
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