Abstract
This chapter presents the physical mechanism analysis and the compact behavioral modeling of the titanium oxide, ferroelectric tunnel junctions, and phase change materials memristive devices. The memristive devices mathematical theoretical model’s derivation and physics-based model structure representations along with their resistive switching mechanisms are analyzed, implemented and validated. The accuracy of the implemented Verilog-A models of the considered memristive deivces are assessed in a synaptic transmission through spike-timing-dependent plasticity. Moreover, the key properties and performances of these three memristors technologies are discussed in order to classify them and study their adequacy for their adoption to artificially imitate synaptic functionality in neuromorphic applications.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
International Technology Roadmap for Semiconductors (ITRS). (2015). [Online]. Available: https://www.semiconductors.org/main/2015_international_technology_roadmap_for_semiconductors_itrs.
Mead, C. (1990, October). Neuromorphic electronic systems. Proceedings of the IEEE, 78(10), 1629–1636.
Poon, C. S., & Zhou, K. (2011, September). Neuromorphic silicon neurons and large-scale neural networks: challenges and opportunities. Frontiers in `Neuroscience, 5.
Indiveri, G. et al. (2001, May). Neuromorphic silicon neuron circuits. Frontiers in Neuroscience, 5.
Rachmuth, G., Shouval, H. Z., Bear, M. F., & Poon, C. S. (2011, December). PNAS Plus: A biophysically-based neuromorphic model of spike rate-and timing-dependent plasticity. Proceedings of the National Academy of Sciences, 108, E1266–E1274.
Shouval, H. Z., Bear, M. F., & Cooper, L. N. (2002, August). A unified model of NMDA receptor-dependent bidirectional synaptic plasticity. Proceedings of the National Academy of Sciences, 99(16), 10831–10836.
Chua, L. (1971, September). Memristor-the missing circuit element. IEEE Transactions on Circuit Theory, 18(5), 507–519.
Chua, L. O., & Kang, S. M. (1976, February). Memristive devices and systems. Proceedings of the IEEE, 64(2), 209–223.
Pickett, M. D. et al. (2009, October) Switching dynamics in titanium dioxide memristive devices. J. Appl. PhysJournal of Applied Physics, 106, 074508–074508.
Suri, M. et al. (2012, September) Physical aspects of low power synapses based on phase change memory devices. Journal of Applied Physics, 112(5), 054904.
Yang, J. J., Strukov, D. B., & Stewart, D. R. (2013, January). Memristive devices for computing. Nature Nanotechnology, 8(1), 13-24.
Chanthbouala, A et al. (2012, October). A ferroelectric memristor. Nature Materials, 11(10), 860–864.
Chua, L. O., Desoer, C. A., & Kuh, E. S. (1987). Linear and nonlinear circuits. New York: McGraw-Hill College.
Baek, I. G., et al. (2004). Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses, In. IEDM Technical Digest IEEE International Electron Devices Meeting, 2004, 587–590.
Kim, K. M., Jeong, D. S., & Hwang, C. S. (2011, June). Nanofilamentary resistive switching in binary oxide system; a review on the present statusand outlook. Nanotechnology, 22, 254002.
Wright, C. D., Hosseini, P., & Diosdado, J. A. V. (2013, June). Beyond von‐Neumann Computing with Nanoscale Phase‐Change Memory Devices. Advanced Functional Materials, 23(18), 2248-2254.
Akinaga, H., Shima, H., Takano, F., Inoue, I. H., & Takagi, H. (2007, July). Resistive switching effect in metal/insulator/metal heterostructures and its application for non‐volatile memory. IEEJ Transactions on Electrical and Electronic Engineering, 2(4), 453–457.
Chalkiadaki, M. A., Valla, C., Poullet, F., & Bucher, M. (2013, November). Why‐and how‐to integrate Verilog‐A compact models in SPICE simulators. International Journal of Circuit Theory and Applications, 41(11), 1203-1211.
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008, May). The missing memristor found. Nature, 453, 80–83.
Prodromakis, T., Peh, B. P., Papavassiliou, C., & Toumazou, C. (2011, September). A versatile memristor model with nonlinear dopant kinetics. IEEE Transactions on Electron Devices, 58(9), 3099–3105.
Waser, R., & Aono, M. (2007). Nanoionics-based resistive switching memories. Nature Materials, 6, 833–840.
Jameson, J. R. et al.(2011, August). One-dimensional model of the programming kinetics of conductive-bridge memory cells, Applied Physics Letters, 99(6), 063506.
Gao, B., Kang, J., Liu, L., Liu, X., & Yu, B. (2011, June). A physical model for bipolar oxide-based resistive switching memory based on ion-transport-recombination effect. Applied Physics Letters, 98, 232108.
Catalan, G., Scott, J. F., Schilling, A., & Gregg, J. M. (2007). Wall thickness dependence of the scaling law for ferroic stripe domains. Journal of Physics: Condensed Matter, 19(2), 022201.
Catalan, G. et al. (2008, January). Fractal dimension and size scaling of domains in thin films of multiferroic BiFeO 3. Physical review letters, 100(2), 027602.
Bibes, M. (2012, May). Nanoferronics is a winning combination. Nature Materials, 11(5), 354–357.
Ishibashi, Y., & Takagi, Y. (1971, August). Note on ferroelectric domain switching. Journal of the Physical Society of Japan, 31(2), 506–510.
Hashimoto, S., Orihara, H., & Ishibashi, Y. (1994, April). Study on DE hysteresis loop of TGS based on the Avrami-type model. Journal of the Physical Society of Japan, 63(4), 1601–1610.
Tagantsev, A. K., Stolichnov, I., Setter, N., Cross, J. S., & Tsukada, M. (2002, December). Non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films. Physical Review B, 66(21), 214109.
Brinkman, W. F., Dynes, R. C., & Rowell, J. M. (1970, April). Tunneling conductance of asymmetrical barriers. Journal of Applied Physics, 41(5), 1915–1921.
Simmons, J. G. (1963, September). Electric tunnel effect between dissimilar electrodes separated by a thin insulating film. Journal of Applied Physics, 34(9), 2581–2590.
Abdalla, H., & Pickett, M. D. (2011). SPICE modeling of memristors, In. IEEE International Symposium of Circuits and Systems (ISCAS), 2011, 1832–1835.
Peng, C., Cheng, L., & Mansuripur, M. (1997, November). Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media. Journal of Applied Physics, 82(9), 4183–4191.
Drachman, D. A. (2005, June). Do we have brain to spare?. Neurology, 64(12), 2004–2005.
Fornito, A., Zalesky, A., & Breakspear, M. (2015, March). The connectomics of brain disorders. Nature Reviews Neuroscience, 16(3), 159–172.
Kandel, E. R., Schwartz, J. H., & Jessell, T. M. (2000). Principles of neural science. New York: McGraw-Hill, Health Professions Division.
Hebb, D. O. (2005). The organization of behavior: A neuropsychological theory. Psychology Press.
Markram, H., Gerstner, W., & Sjöström, P. J. (2011). A history of spike-timing-dependent plasticity. Frontiers in Synaptic Neuroscience, 3, 4.
Bi, G. Q., & Poo, M. M. (1998, December). Synaptic modifications in cultured hippocampal neurons: dependence on spike timing, synaptic strength, and postsynaptic cell type. Journal of Neuroscience, 18(24), 10464–10472.
Zhang, L. I., Tao, H. W., Holt, C. E., Harris, W. A., & Poo, M. M. (1998, September). A critical window for cooperation and competition among developing retinotectal synapses. Nature, 395(6697), 37–44.
Markram, H., Lübke, J., Frotscher, M., & Sakmann, B. (1997, January). Regulation of synaptic efficacy by coincidence of postsynaptic APs and EPSPs. Science, 275(5297), 213-215.
Froemke, R. C., & Dan, Y. (2002, March). Spike-timing-dependent synaptic modification induced by natural spike trains. Nature, 416(6879), 433–438.
Levy, W. B., & Steward, O. (1983, April). Temporal contiguity requirements for long-term associative potentiation/depression in the hippocampus. Neuroscience, 8(4), 791–797.
Snider, G. S. (2008). Spike-timing-dependent learning in memristive nanodevices, In. IEEE International Symposium on Nanoscale Architectures, 2008, 85–92.
Serrano-Gotarredona, T., Masquelier, T., Prodromakis, T., Indiveri, G., & Linares-Barranco, B. (2013, February). STDP and STDP variations with memristors for spiking neuromorphic learning systems. Frontiers in Neuroscience, 7.
Park, S. et al. (2015, May). Electronic system with memristive synapses for pattern recognition, Scientific Reports, 5, 10123.
Zhao, B., Ding, R., Chen, S., Linares-Barranco, B., & Tang, H. (2015, September). Feedforward categorization on AER motion events using cortex-like features in a spiking neural network. IEEE Transactions on Neural Networks and Learning Systems, 26(9), 1963–1978.
Yakopcic, C., Alom, M. Z., & Taha, T. M. (2016). Memristor crossbar deep network implementation based on a Convolutional neural network. In. International Joint Conference on Neural Networks (IJCNN), 2016, 963–970.
Lennie, P. (2003). The cost of cortical computation. Current Biology, 6(13), 493–497.
Kuzum, D., Jeyasingh, R. G., Lee, B., & Wong, H. S. P. (2011, May). Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing. Nano Letters, 12, 2179–2186.
Kuzum, D., Jeyasingh, R. G. D., Yu, S., & Wong, H. S. P. (2012, December). Low-energy robust neuromorphic computation using synaptic devices. IEEE Transactions on Electron Devices, 59(12), 3489–3494.
Saïghi, S. et al. (2015, March). Plasticity in memristive devices for spiking neural networks. Frontiers in Neuroscience, 9.
La Barbera, S., Vincent, A. F., Vuillaume, D., Querlioz, D., & Alibart, F. (2016, December). Interplay of multiple synaptic plasticity features in filamentary memristive devices for neuromorphic computing. Scientific Reports, 6, 39216.
Serb, A., Bill, J., Khiat, A., Berdan, R., Legenstein, R., & Prodromakis, T. (2016). Unsupervised learning in probabilistic neural networks with multi-state metal-oxide memristive synapses. Nature Communications, 7, 12611.
DARPA SyNAPSE Program. Available: http://www.artificialbrains.com/darpa-synapse-program.
Choi, H. et al. (2009, August). An electrically modifiable synapse array of resistive switching memory, Nanotechnology, 20, 345201.
Laughlin, S. B., & Sejnowski, T. J. (2003). Communication in neuronal networks. Science, 301(5641), 1870–1874.
Siemon, A., Menzel, S., Waser, R., & Linn, E. (2015). Controllability of multi-level states in memristive device models using a transistor as current compliance during SET operation. In. International Joint Conference on Neural Networks (IJCNN), 2015, 1–8.
Goldberg, D. H., Cauwenberghs, G., & Andreou, A. G. (2001, July). Probabilistic synaptic weighting in a reconfigurable network of VLSI integrate-and-fire neurons. Neural Networks, 14(6–7), 781–793.
Suri, M. et al. (2012) CBRAM devices as binary synapses for low-power stochastic neuromorphic systems: auditory (cochlea) and visual (retina) cognitive processing applications. In Electron Devices Meeting (IEDM), 2012 (pp. 10.3.1–10.3.4).
Vincent, A. F., et al. (2014). Spin-transfer torque magnetic memory as a stochastic memristive synapse. In. IEEE International Symposium on Circuits and Systems (ISCAS), 2014, 1074–1077.
Jo, S. H., Chang, T., Ebong, I., Bhadviya, B. B., Mazumder, P., & Lu, W. (2010, April). Nanoscale memristor device as synapse in neuromorphic systems. Nano Letters, 10(4), 1297–1301.
Jo, S. H., Kim, K. H., & Lu, W. (2009, February). High-density crossbar arrays based on a Si memristive system. Nano Letters, 9(2), 870-874.
Borghetti, J., et al. (2009). A hybrid nanomemristor/transistor logic circuit capable of self-programming. Proceedings of the National Academy of Sciences, 106(6), 1699–1703.
Abraham, W. C. (2003, April). How long will long-term potentiation last?. MyScienceWork.
Ohno, T., Hasegawa, T., Tsuruoka, T., Terabe, K., Gimzewski, J. K., & Aono, M. (2011, August). Short-term plasticity and long-term potentiation mimicked in single inorganic synapses. Nature Materials, 10(8), 591–595.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2018 Springer International Publishing AG
About this chapter
Cite this chapter
Zayer, F., Dghais, W., Belagcem, H. (2018). Modeling of Memristive Devices for Neuromorphic Application. In: Alam, M., Dghais, W., Chen, Y. (eds) Real-Time Modelling and Processing for Communication Systems. Lecture Notes in Networks and Systems, vol 29. Springer, Cham. https://doi.org/10.1007/978-3-319-72215-3_8
Download citation
DOI: https://doi.org/10.1007/978-3-319-72215-3_8
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-72214-6
Online ISBN: 978-3-319-72215-3
eBook Packages: EngineeringEngineering (R0)