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A Detailed Extraction Procedure of Thyristor Design Parameters

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Real-Time Modelling and Processing for Communication Systems

Part of the book series: Lecture Notes in Networks and Systems ((LNNS,volume 29))

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Abstract

Before manufacturing, designers of power electronic systems use more and more computer simulation. The reduced computing cost and precision of power component models are essential for the accurate simulation of the power electronic systems to predict their electrical behavior. The accurate simulations of power electronic systems are based on the one hand on the knowledge of power component design parameters not published by manufacturers and on the other hand on a very good description of the arrangement and position of devices including the electromagnetic compatibility (EMC) contributions. In this chapter, through a study considering an experimental circuit of a switching cell including a Thyristor under test controlled by a MOSFET transistor, it is checked that a simple wiring inductance as the circuit wiring representation is insufficient to obtain accurate simulation results. Therefore, a suitable wiring model of the switching cell circuit is developed taking into account the wiring parasitic inductances of the layout and the mutual effects between them. Then, using the accurate model of the switching cell circuit, a detailed extraction procedure of the Thyristor design parameters is developed. This extraction procedure is based on a comparative study between experimental and simulated results, considering the physics of component. Finally a good agreement is obtained between experimental and simulated results confirming the validity of the developed extraction procedure as well as the suitable wiring model of the switching cell circuit.

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References

  1. Jedidi, A., Garrab, H., Morel, H., & Besbes, K. (2017). The role of a wiring model in switching cell transients: The pin diode turn-off case. Journal of Power Electronics, 17(2), 561–569.

    Google Scholar 

  2. Fu, R., Grekov, A., Peng, K., & Santi, E. (2014). Parameter extraction procedure for a physics-based power SiC Schottky diode model. IEEE Transactions on Industry Applications, 50(5), 3558–3568.

    Google Scholar 

  3. Garrab, H., Allard, B., Morel, H., Ammous, K., Ghedira, S., Ammimi, A., Besbes, K., & Guichon, J. M. (2005). On the extraction of PiN diode desin parameters for validation of integrated power converter design. IEEE Transactions on Power Electronics, 20(3), 660–670.

    Google Scholar 

  4. Grekov, A. E., Chen, Z., Fu, R., Hudgins, J. L., Mantooth, H. A., Sheridan, D. C., et al. (2011). Parameter extraction procedure for vertical SiC power JFET. IEEE Transactions on Industry Applications, 47(4), 1862–1871.

    Article  Google Scholar 

  5. Fu, G., & Xue, P. (2016). An excess carrier lifetime extraction method for physics-based IGBT models. Journal of Power Electronics, 16(2), 778–785.

    Google Scholar 

  6. Chibante, R., Araujo, A., & Carvalho. (2009). Finite-element modeling and optimization-based parameter extraction algorithme for NPT-IGBT. IEEE Transactions on Power Electronics, 24(5), 1417–1427.

    Google Scholar 

  7. Guerrero, V., Pontt, J., Dixon, J., & Rebolledo, J. (2013). A noninvasive failure-detection system for high-power converters based on SCRs. IEEE Transactions on Industrial Electronics, 60(2), 450–458.

    Google Scholar 

  8. Nho, E. C., Han, B. M., Chung, Y. H., Baek, S. T., & Jung, J. H. (2014). Synthetic test circuit for thyristor valve in hvdc converter with new high-current source. IEEE Transactions on Power Electronics, 29(7), 3290–3296.

    Google Scholar 

  9. Tessarolo, A., Bassi, C., Ferrari, G., Giulivo, D., Macuglia, R., & Menis, R. (2013). Investigation into the high-frequency limits and performance of load commutated inverters for high-speed synchronous motor drives. IEEE Transactions on Industrial Electronics, 60(6), 2147–2157.

    Google Scholar 

  10. Allard, B., Garrab, H., Salah, T. B., Morel, H., Ammous, K., & Besbes, K. (2008). On the role of the n–n + junction doping profile of a PIN diode on its turn-off transient behavior. IEEE Transactions on Power Electronics, 23(1), 491–494.

    Article  Google Scholar 

  11. Garrab, H., Jedidi, A., Morel, H., & Besbes, K. (2017). A novel approach to accurately determine the tq parameter of Thyristors. IEEE Transactions on Industrial Electronics, 64(1), 206–216.

    Google Scholar 

  12. MDRAW-ISE TCAD Release 10.0. (2004). User’s guide manual, integrated systems engineering. Zurich, Switzerland.

    Google Scholar 

  13. Tektronics, P5100 Voltage Probe: Data Sheet, Tektronics. (2010). [Online]. Available http://www.tek.com.

  14. DESSIS-ISE TCAD Release 10.0. (2004). User’s guide manual, integrated systems engineering. Zurich, Switzerland.

    Google Scholar 

  15. Garrab, H. (2003). Contribution à la modélisation électro-thermique de la cellule de commutation MOSFET-Diode, Ph.D. dissertation. Indian National Science Academy (INSA). de Lyon, Villeurbanne, France.

    Google Scholar 

  16. Ammous, K., Morel, H., & Ammous, A. (2010). Analysis of power switching losses accounting probe modeling. IEEE Transactions Instrumentation and Measurement, 59(12), 3218–3226.

    Google Scholar 

  17. Safavi, S., & Ekman, J. (2014). A hybrid PEEC–SPICE method for time-domain simulation of mixed nonlinear circuits and electromagnetic problems. IEEE Transactions Electromagnetic Compatibility, 56(4), 912–922.

    Google Scholar 

  18. Muhlfeld, O., & Fuchs, F. W. (2010). Comprehensive optimization method for thermal properties and parasitics in power modules. In Proceedings of IEEE energy conversion congress and exposition (pp. 2266–2271).

    Google Scholar 

  19. Agilent technologies, IC-CAP device modeling software, complete and accurate parameter extraction for semiconductor device modeling, technical overview .(2012). [Online]. Available http://www.Keysight.com.

  20. salah, T. B. (2007). Contribution à la conception des dispositifs de puissance en carbure de silicium: étude et extraction des paramètres. Ph.D. dissertation. Indian National Science Academy (INSA). de Lyon, Villeurbanne, France.

    Google Scholar 

  21. SZE, S. M. (1981). Physics of semiconductor devices (868p). New York: Willey.

    Google Scholar 

  22. Baliga, B. J. (1995). Modern power devices (2nd ed.). Malabar, FL: Krieger.

    Google Scholar 

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Correspondence to Hatem Garrab .

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Garrab, H., Jedidi, A., Morel, H. (2018). A Detailed Extraction Procedure of Thyristor Design Parameters. In: Alam, M., Dghais, W., Chen, Y. (eds) Real-Time Modelling and Processing for Communication Systems. Lecture Notes in Networks and Systems, vol 29. Springer, Cham. https://doi.org/10.1007/978-3-319-72215-3_6

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  • DOI: https://doi.org/10.1007/978-3-319-72215-3_6

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  • Publisher Name: Springer, Cham

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