Abstract
The flash memories have gained considerable attention to replace hard-disk drives in modern storage applications because of the following excellent features such as the low cost, low power consumption, and high storage densities as compared to other non-volatile technologies. However, some error types are associated with flash memories such as charge leakage and inter-cell interference errors. It leads to the bidirectional limited magnitude channel model if both the error types are considered together. It has been observed that these error types are data value dependent for 2-bit MLC flash; they have different probabilities to become erroneous. In this paper, we consider the bidirectional limited magnitude errors by considering the data value dependencies of these error sources. A code construction to correct bidirectional limited magnitude errors is provided as well. The proposed code construction is the generalized case of asymmetric, symmetric, and bidirectional limited magnitude error correcting codes.
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Acknowledgment
This work was supported by China Program of International S&T Cooperation 2016YFE0100300 and National Natural Science Foundation of China under Grant 61571293.
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Hussain, A., Yu, X., Luo, Y. (2017). Generalized Bidirectional Limited Magnitude Error Correcting Code for MLC Flash Memories. In: Gao, X., Du, H., Han, M. (eds) Combinatorial Optimization and Applications. COCOA 2017. Lecture Notes in Computer Science(), vol 10627. Springer, Cham. https://doi.org/10.1007/978-3-319-71150-8_37
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DOI: https://doi.org/10.1007/978-3-319-71150-8_37
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