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Notes
- 1.
After multiplication with 2·dV/dx, Eq. (3.7) can be integrated analytically to obtain the field \( {\mathsf{E}}\left( {\text{x}} \right) \) as function of V(x) in both regions. From the continuity of potential and field at the metallurgical junction the potential parts V P , V N are then determined.
- 2.
The threshold voltage given in data sheets for power diodes is about 0.2–0.5 V higher. Because these diodes have a pin structure (see Sect. 5), a voltage drop across the base (i) region and at the i-n junction have to be added. As threshold voltage one uses there the onset voltage V s in the simplified ohmic characteristic V F = V s + R · diff I F .
- 3.
Some manufacturers data sheets specify V B at 25 °C, and for application at lower temperatures one must be aware of said decrease of V B with temperature.
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Lutz, J., Schlangenotto, H., Scheuermann, U., De Doncker, R. (2018). pn-Junctions. In: Semiconductor Power Devices. Springer, Cham. https://doi.org/10.1007/978-3-319-70917-8_3
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