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Notes

  1. 1.

    Actually the occupation of excited states causes an additional degeneracy and enhancement of g [Bla62, p. 140 ff]. In Si this effect seems to be relative small owing to the high energy difference between the excited states and the ground state. Since a calculation under real conditions is not available, the effect is not taken into account.

  2. 2.

    Like-carrier scattering does not influence the mobilities directly, because the total momentum of two colliding particles and hence the current they transport are not changed by the impact. Nevertheless it reduces the mobilities by randomizing the velocity distribution of carriers, which makes scattering by ions and phonons more effective [Deb54, Luo71]. The influence of like-carrier scattering on the effectiveness of electron-hole scattering is unclear till now.

  3. 3.

    In [Jac77] a second expression for the saturation velocity of electrons has been given, it reads:

    $$ v_{sat(n)} = \frac{{2.4 \cdot 10^{7} {\text{cm}}/{\text{s}}}}{1 + 0.8 \cdot \,\exp (T/600)}. $$
  4. 4.

    For example, the ambipolar diffusion constant

    $$ D = \frac{{2D_{n} D_{p} }}{{D_{n} + D_{p} }}, $$

    relevant for the carrier distribution at high injection levels (see Sect. 5.4.1), is proposed in mentioned papers to be independent of the carrier concentration n = p. While D n decreases with increasing n, the hole diffusion constant D p rises. Obviously this disagrees with (2.45) since µn and µ p decrease with n. Also the mobility ratio µ n /µ p is obtained to be constant in cited papers in contrast to the conventional theory. This results in strongly different high current characteristics of asymmetrical pn−n+ diodes.

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Authors and Affiliations

  1. Chair Power Electronics and Electromagnetic Compatibility, Faculty of ET/IT, Chemnitz University of Technology, Chemnitz, Sachsen, Germany

    Josef Lutz

  2. Neu-Isenburg, Germany

    Heinrich Schlangenotto

  3. Semikron Elektronik GmbH & Co. KG, Nuremberg, Germany

    Uwe Scheuermann

  4. Chair Power Generation and Storage Systems, Faculty of ET/IT, E.ON ERC, RWTH Aachen University, Aachen, Germany

    Rik De Doncker

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Lutz, J., Schlangenotto, H., Scheuermann, U., De Doncker, R. (2018). Semiconductor Properties. In: Semiconductor Power Devices. Springer, Cham. https://doi.org/10.1007/978-3-319-70917-8_2

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