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Notes
- 1.
Exception devices with cells (MOSFETS, IGBTs, MPS-diodes) in which the cell geometry is adjusted that the avalanche breakdown occurs first below the cells and not at the edge, see above.
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Lutz, J., Schlangenotto, H., Scheuermann, U., De Doncker, R. (2018). Destructive Mechanisms in Power Devices. In: Semiconductor Power Devices. Springer, Cham. https://doi.org/10.1007/978-3-319-70917-8_13
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