This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsNotes
- 1.
Equation (10.9) is usually derived for low injection. The considerations, however, will also be valid for high injection, qualitatively.
References
Araki, T.: Integration of power devices – next tasks. In: Proceedings of the EPE, Dresden (2005)
Baliga, B.J., Adler, M.S., Grey, P.V., Love, R.P.: The insulated gate rectifier (IGR): a new power switching device. In Proceedings of the IEDM, pp. 264–267 (1982)
Baliga, B.J.: Fast-switching insulated gate transistors. IEEE Electron Device Lett. 4(12), 452–454 (1983)
Becke, H.W., Wheatley, Jr C.F.: Power MOSFET with an anode region. United States Patent Nr. 4,364,073, 14 Dec 1982 (filed 25 Mar 1980)
Dugal, F., Baschnagel, A., Rahimo, M., Kopta, A.: The next generation 4500 V/3000A BIGT Stakpak modules. In: Proceedings PCIM Europe 2017, pp. 765–769 (2017)
Griebl, E., Hellmund, O., Herfurth, M., Hüsken, H., Pürschel, M.: LightMOS – IGBT with integrated diode for lamp ballast applications. In: PCIM 2003, p. 79ff (2003)
Iwamuro, N., Laska, T.: IGBT history, state-of-the-art, and future prospects. IEEE Trans. El. Dev. 64(3), 741–752 (2017)
Kitagawa, M., Omura, I., Hasegawa, S., Inoue, T., Nakagawa, A.: A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) in a mode similar to a thyristor. In: IEEE IEDM Technical Digest, pp. 697–682 (1993)
Laska, T., Miller, G., Niedermeyr, J.: A 2000 V non-punchtrough IGBT with high ruggedness. Solid State Electron. 35(5), 681–685 (1992)
Laska, T., Lorenz, L., Mauder, A.: The field stop IGBT concept with an optimized diode. In: Proceedings of the 41th PCIM, Nürnberg (2000)
Laska, T., Münzer, M., Pfirsch, F., Schaeffer, C., Schmidt, T.: The Field Stop IGBT (FS IGBT) – a new power device concept with a great improvement potential. In: Proceedings of the ISPSD, Toulouse (2000)
Laska, T., et al.: Short circuit properties of trench/field stop IGBTs design aspects for a superior robustness. In: Proceeding 15th ISPSD, pp. 152–155, Cambridge (2003)
Linder, S.: Power semiconductors. EPFL Press, Lausanne, Switzerland (2006)
Miller, G., Sack, J.: A new concept for a non punch through IGBT with MOSFET like switching characteristics. In: Proceedings of the PESC’ 89, vol. 1, pp. 21–25 (1989)
Mori, M., et al.: A planar-gate high-conductivity IGBT (HiGT) with hole-barrier layer. IEEE Trans. El. Dev. 54(6), 1515 (2007)
Naito, T., Takei, M., Nemoto, M., Hayashi, T., Ueno, K.: 1200 V reverse blocking IGBT with low loss for matrix converter. In: Proceedings of the ISPSD ‘04, pp. 125–128 (2004)
Nakagawa, A., Ohashi, H., Kurata, M., Yamaguchi, H., Watanabe, K.: Non-latch-up 1200 V 75A bipolar-mode MOSFET with large ASO. In: Proceeding IEEE International Electron Devices Meeting, Dec 1984, pp. 860–861
Nakawaga, A., Ohashi, H.: 600–1200 V bipolar mode MOSFETS with high-current capability. IEEE-EDL 6(7), 378–380 (1985)
Nakagawa, A.: Theoretical investigation of silicon limit characteristics of IGBT. In: Proceedings of the ISPSD, Neapel (2006)
Netzel, M.: Analyse, Entwurf und Optimierung von diskreten vertikalen IGBT-Strukturen, Dissertation. Isle-Verlag, Ilmenau (1999)
Nicolai, U., Reimann, T., Petzoldt, J., Lutz, J.: Application Manual Power modules, ISLE Verlag (2000)
Ogura, T., Ninomiya, H., Sugiyama, K., Inoue, T.: 4.5 kV injection enhanced gate transistors (IEGTs) with high turn-off ruggedness. IEEE Trans. Electron Devices 51, 636–641 (2004)
Omura, I., Ogura, T., Sugiyama, K., Ohashi, H: Carrier injection enhancement effect of high voltage MOS-devices – device physics and design concept. In: Proceedings of the ISPSD, Weimar (1997)
Osawa, A., Higuchi, K., Kiamura, A., Inoue, D., Takamiya, Y., Yoshida, S., Gohara, H., Otsuki, M.: The highest power density IGBT module in the world for xEV power train. Proc. PCIM Europe 2017, 1761–1766 (2017)
Plumer, J.D., Scharf, B.W.: Insulated-gate planar thyristors: I-Structure and basic operation. IEEE Trans. Electron Devices 27(2), 380–387 (1980)
Rahimo, M., Kopta, A., Eicher, S., Kaminski, N., Bauer, F., Schlapbach, U., Linder, S.: Extending the boundary limits of high voltage IGBTs and diodes to above 8 kV. In: Proceeding ISPSD 2002, Santa Fe, USA, pp. 41–44
Rahimo, M., Kopta, A., Linder, S.: Novel enhanced–planar IGBT technology rated up to 6.5 kv for lower losses and higher SOA capability. In: Proceeeding ISPSD 2006, Naples, pp. 33–36 (2006)
Rahimo, M., Schlapbach, U., Kopta, A., Vobecky, J., Schneider, D., Baschnagel, A.: A high current 3300 v module employing reverse conducting IGBTs setting a new benchmark in output power capability. In: Proceeding ISPSD, Orlando, FL (2008)
Rahimo, M., Kopta, A., Schlapbach, U., Vobecky, J., Schnell, R., Klaka, S.: The Bi-mode insulated gate transistor (BiGT) A potential technology for higher power applications. In: Proceeding ISPSD09, p. 283 (2009)
Rogne, T., Ringheim, N.A., Odegard, B., Eskedal, J., Undeland, T.M.: Short-circuit capability of IGBT (COMFET) transistors. IEEE Ind. Appl. Soc. Annu. Meet. 1, 615–619 (1988)
Russell, J.P., Goodman, A.M., Goodman, L.A., Neilson, J.M.: The COMFET – a new high conductance MOS-gated device. IEEE Electron Device Lett. 4(3), 63–65 (1983)
Rüthing, H., Hille, F., Niedernostheide, F.J., Schulze, H.J., Brunner, B.: 600 V reverse conducting (RC-) IGBT for drives applications in ultra-thin wafer technology. In: 19th International Symposium on Power Semiconductor Devices and IC’s, ISPSD ‘07, pp. 89–92 (2007)
Sakane, H., Sumitomo, M., Arakawa, K., Higuchi, Y., Asai, J.: Injection Control Technique for High Speed Switching with a double gate PNM-IGBT. In: The Papers of Joint Technical Meeting on Electron Devices and Semiconductor Power Converter, IEE Japan, Paper No. EDD-13-046 SPC-13-108 (2013)
Scharf, B.W., Plummer, J.D.: A MOS-controlled triac device. In: Proceeding IEEE International Solid-State Circuits Conference, pp. 222–223 (1978)
Shenai, K.: The invention and demonstration of the IGBT. IEEE Power Electron. Mag. June 2015
Storasta, L., et al.: The radial layout design concept for the bi-mode insulated gate transistor. In: ISPSD, San Diego, USA (2011)
Storasta, L., Rahimo, M., Häfner, J., Dugal, F., Tsyplakov, E., Callavik, M.: Optimized power semiconductors for the power electronics based HVDC breaker application. In: Proceedings PCIM 2015, Nuremberg (2015)
Sumitomo, M., et al.: Low loss IGBT with partially narrow mesa structure (PNM-IGBT). In: Proceedings ISPSD (2012)
Sumitomo, M., et al.: Injection control technique for high speed switching with a double gate PNM-IGBT. In: Proceedings ISPSD, Brügge (2013)
Takahashi, M., Yoshida, S., Tamenori, A., Kobayashi, Y., Ikawa, O.: Extended power rating of 1200 V IGBT module with 7G-RC-IGBT chip technologies. In: Proceedings PCIM Europe 2017, pp. 438–444 (2016)
Takahashi, H., Haruguchi, H., Hagino, H., Yamada, T.: Carrier stored trench-gate bipolar transistor (CSTBT) – a novel power device for high voltage application. In: ISPSD ‘96 Proceedings 8th International Symposium on Power Semiconductor Devices and ICs 20–23 May 1996, pp. 349–352, 1133 (1996)
Takahashi, H., Kaneda, M., Minato, T.: 1200 V class reverse blocking IGBT (RB-IGBT) for AC matrix converter. In: Proceedings of the 16th ISPSD, pp. 121–124 (2004)
Takahashi, H., Yamamoto, A., Aono, S., Minato, T.: 1200 V reverse conducting IGBT. In: Proceedings of the 16th ISPSD, pp. 133–36 (2004)
Takeda, T., Kuwahara, M., Kamata, S., Tsunoda, T., Imamura, K., Nakao, S.: 1200 V trench gate NPT-IGBT (IEGT) with excellent low on-state voltage. In: Proceedings of the ISPSD, Kyoto (1998)
Tihanyi, J.: “MOS-Leistungsschalter”, ETG-Fachtagung Bad Nauheim, 4.-5. Mai 1988, Fachbericht Nr. 23, VDE-Verlag, S. 71–78 (1988)
Werber, D., Pfirsch, F., Gutt, T., Komarnitskyy, V., Schaeffer, C., Hunger, T., Domes, D.: 6.5 kV RCDC for increased power density in IGBT-modules. In: Proceedings of the 26th ISPSD, Waikoloa, pp. 35–38 (2014)
Werber, D.: A 1000A 6.5 kV power module enabled by reverse-conducting trench-IGBT-technology. In: Proceedings PCIM 2015, Nuremberg (2015)
Yamada, J., Yu, Y., Donlon, J.F., Motto, E.R.: New MEGA POWER DUAL™ IGBT module with advanced 1200 V CSTBT chip. In: Record of the 37th IAS Annual Meeting Conference, vol. 3, pp. 2159–2164 (2002)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2018 Springer International Publishing AG
About this chapter
Cite this chapter
Lutz, J., Schlangenotto, H., Scheuermann, U., De Doncker, R. (2018). IGBTs. In: Semiconductor Power Devices. Springer, Cham. https://doi.org/10.1007/978-3-319-70917-8_10
Download citation
DOI: https://doi.org/10.1007/978-3-319-70917-8_10
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-70916-1
Online ISBN: 978-3-319-70917-8
eBook Packages: EngineeringEngineering (R0)