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Semiconductor Power Devices pp 391–425Cite as

IGBTs

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Notes

  1. 1.

    Equation (10.9) is usually derived for low injection. The considerations, however, will also be valid for high injection, qualitatively.

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Author information

Authors and Affiliations

  1. Chair Power Electronics and Electromagnetic Compatibility, Faculty of ET/IT, Chemnitz University of Technology, Chemnitz, Sachsen, Germany

    Josef Lutz

  2. Neu-Isenburg, Germany

    Heinrich Schlangenotto

  3. Semikron Elektronik GmbH & Co. KG, Nuremberg, Germany

    Uwe Scheuermann

  4. Chair Power Generation and Storage Systems, Faculty of ET/IT, E.ON ERC, RWTH Aachen University, Aachen, Germany

    Rik De Doncker

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  1. Josef Lutz
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Lutz, J., Schlangenotto, H., Scheuermann, U., De Doncker, R. (2018). IGBTs. In: Semiconductor Power Devices. Springer, Cham. https://doi.org/10.1007/978-3-319-70917-8_10

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  • DOI: https://doi.org/10.1007/978-3-319-70917-8_10

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