Skip to main content
SpringerLink
Log in

Simulation of Ridge-Waveguide AlGaInP/GaInP Multiple-Quantum Well Diode Lasers

  • Conference paper
  • First Online:
AETA 2017 - Recent Advances in Electrical Engineering and Related Sciences: Theory and Application (AETA 2017)

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 465))

  • 2373 Accesses

Abstract

The output characteristics of the ridge-waveguide AlGaInP/GaInP multiple quantum well diode lasers have been investigated via ATLAS simulation tool. Three ridge-waveguide parameters including the ridge width, ridge height and the cavity mirror reflectivity have been analyzed in order to achieve the optimal performance of the diode lasers. Simulation results show the significant improvement of the laser output power when increasing the ridge width, the ridge height (etch through the active region) and when applying the optical coatings on the laser facets. There are still some limitations regarding these approaches, but one could potentially figure out the optimal set of the ridge-waveguide parameters for optimal performance of the AlGaInP/GaInP diode lasers.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 259.00
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 329.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 329.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

References

  1. Shimada, N., et al.: High-power 625-nm AlGaInP laser diode. IEEE J. Sel. Top. Quantum Electron. 17(6), 1723–1726 (2011)

    Article  Google Scholar 

  2. Manasre, M.O.: Visible emitting (AlGa)InP laser diodes. In: Strained Quantum Wells and Their Applications, pp. 431–487. Gordon and Breach (1997)

    Google Scholar 

  3. Mogensen, P.C., et al.: The effect of high compressive strain on the operation of AlGaInP quantum-well lasers. IEEE J. Quantum Electron. 34(9), 1652–1659 (1998)

    Article  Google Scholar 

  4. Sanjeev, C.P.: ATLAS simulation of a laser diode for free space optical communication (FSOC) in mid-infrared spectral region. Opto-Electron. Rev. 22, 147–151 (2014)

    Article  Google Scholar 

  5. Tran, N.T., et al.: High precision AlGaAsSb ridge-waveguide etching by in situ reflectance monitored ICP-RIE. In: Proceeding of SPIE (2014)

    Google Scholar 

  6. Agrawal, G.P., Dutta, N.K.: Long-wavelength semiconductor lasers. Van Nostrand Reinhold, New York (1986)

    Book  Google Scholar 

  7. Bylsma, R.B., Derkits, G.B., Heffner, W.R.: Semiconductor laser reliability test structure and method. Google Patents (2001)

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Optoelectronics Research Group, Faculty of Electrical and Electronics Engineering, Ton Duc Thang University, No.19 Nguyen Huu Tho Street, Tan Phong Ward, Dist. 7, Ho Chi Minh City, Vietnam

    Thanh-Nam Tran & Le The Vinh

Authors
  1. Thanh-Nam Tran
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Le The Vinh
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Thanh-Nam Tran .

Editor information

Editors and Affiliations

  1. Faculty of Electrical - Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City, Vietnam

    Vo Hoang Duy

  2. International Cooperation, Research and Training Institute, Ton Duc Thang University, Ho Chi Minh City, Vietnam

    Tran Trong Dao

  3. Department of Computer Science, Faculty of Electrical Engineering and Computer Science, VŠB-TUO, Ostrava, Czech Republic

    Ivan Zelinka

  4. Department of Mechanical Design Engineering, Pukyong National University, Busan, Korea (Republic of)

    Sang Bong Kim

  5. Faculty of Electrical - Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City, Vietnam

    Tran Thanh Phuong

Rights and permissions

Reprints and permissions

Copyright information

© 2018 Springer International Publishing AG

About this paper

Check for updates. Verify currency and authenticity via CrossMark

Cite this paper

Tran, TN., Vinh, L.T. (2018). Simulation of Ridge-Waveguide AlGaInP/GaInP Multiple-Quantum Well Diode Lasers. In: Duy, V., Dao, T., Zelinka, I., Kim, S., Phuong, T. (eds) AETA 2017 - Recent Advances in Electrical Engineering and Related Sciences: Theory and Application. AETA 2017. Lecture Notes in Electrical Engineering, vol 465. Springer, Cham. https://doi.org/10.1007/978-3-319-69814-4_26

Download citation

  • DOI: https://doi.org/10.1007/978-3-319-69814-4_26

  • Published:

  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-69813-7

  • Online ISBN: 978-3-319-69814-4

  • eBook Packages: EngineeringEngineering (R0)

Publish with us

Policies and ethics

Search

Navigation