Abstract
A novel silicon nanowire field effect transistor (SiNW-FET) was fabricated using complementary metal oxide semiconductor (CMOS) compatible technology. The shrank nanowire with high surface-to-volume ratio and individual back gate were achieved by the local-oxidation of silicon (LOCOS) process. The width of nanowire by this technique can be shrank down to sub 100 nm. The drain current versus gate voltage (Id-Vg) characteristic of the SiNW-FET exhibits about five orders of magnitude of Ion/Ioff current ratio, and the threshold voltage shifts positively after hybridization of 1fM concentrations of HBV X gene DNA fragments and 3 ng/mL concentrations of the cancer marker, respectively. The results show that the back-gated nanowire device has the capability of acting as a real-time, label-free, highly sensitivity and excellent selectivity SiNW-FET biosensor in detecting biomolecules.
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Wu, CC., Manga, Y.B., Hung, JY., Yang, WL. (2018). A Novel Approach to Fabricate Silicon Nanowire Field Effect Transistor for Biomolecule Sensing. In: Duy, V., Dao, T., Zelinka, I., Kim, S., Phuong, T. (eds) AETA 2017 - Recent Advances in Electrical Engineering and Related Sciences: Theory and Application. AETA 2017. Lecture Notes in Electrical Engineering, vol 465. Springer, Cham. https://doi.org/10.1007/978-3-319-69814-4_25
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DOI: https://doi.org/10.1007/978-3-319-69814-4_25
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