Electro-Optic Sampling and Charge-Density Probe
- 364 Downloads
Abstract
Electro-optic sampling is among the fastest of the current optical techniques available. This technique is based on the “Pockels effect” where the optical properties of a crystal change according to an applied electric field applied across it. By sending the light through the crystal, measuring the polar polarization changed, unknown test-point voltages can be determined. There are two general techniques for electro-optic sampling, namely, the external and the internal electro-optic (e-o) sampling. The external electro-optic method uses a small electro-optic crystal as the electro-optic medium, while the internal electro-optic technique uses the circuit substrate itself as the electro-optic medium. In another optical technique named “charge-density” probing, the plasma-optical effect is utilized where charge-density modulations within devices and parasitic PN junctions cause local refractive index changes. By interferometrically sensing these refractive index variations from the backside of an IC, these measurements can be related to either a current or a voltage signal.
Keywords
Electro-optic sampling Pockels effect Charge-density probing Plasma-optical effect Contactless probeReferences
- 1.J.A. Valdmanis, G.A. Mourou, C.W. Gabel, Picosecond electro-optic sampling system. Appl. Phys. Lett. 41, 211–212 (1982)CrossRefGoogle Scholar
- 2.K.W. Weingarten, M.J.W. Rodwell, D.M. Bloom, Picosecond optical sampling of GaAs integrated circuits. IEEE J. Quantum Electron. 24, 198–220 (1988)CrossRefGoogle Scholar
- 3.R.B. Marcus, Measurement of high-speed signals in solid state devices semiconductors and semimetals, vol 28 (Academic, Boston, 1990)Google Scholar
- 4.M. Batinic, B. Weisbrodt, W. Mertin, E. Kubalek, Comparison of measurement results obtained by electron beam testing and indirect electro-optic sampling. Microelectron. Eng. 31, 33–40 (1996)CrossRefGoogle Scholar
- 5.W. Mertin, New aspects in electro-optic sampling. Microelectron. Eng. 31, 356–376 (1996)CrossRefGoogle Scholar
- 6.J.M. Wiesenfeld, Electro-optic sampling of high speed devices and integrated circuits. IEEE J Res Dev 34(2/3), 141–161 (1990)CrossRefGoogle Scholar
- 7.B.H. Kolner, D.M. Bloom, Electrooptic sampling in GaAs integrated circuits. IEEE J. Quantum Electron. QE-22, 79–93 (1986)CrossRefGoogle Scholar
- 8.H.K. Heinrich, A non-invasive optical probe for detecting electrical signals in silicon integrated circuits. PhD Dissertation, April 1987Google Scholar
- 9.H.K. Heinrich, D.M. Bloom, B.R. Hemenway, Non-invasive sheet charge density probe for integrated silicon devices. Appl. Phys. Lett. 48(16), 1066–1068 (1986)CrossRefGoogle Scholar
- 10.J. Beynon, Introductory University optics (Prentice Hall, New York, 1996)Google Scholar
- 11.H.K. Heinrich, Picosecond noninvasive optical detection of internal electrical signals in flip-chip mounted silicon IC’s. IBM J. Res. Dev. 34(2/3), 162–172 (1990)CrossRefGoogle Scholar
- 12.H.K. Heinrich, N. Pakdaman, J.L. Prince, D.S. Kent, L.M. Cropp, Picosecond backside optical detection of internal signals in flip-chip mounted silicon VLSI circuits. Microelectron. Eng. 16, 313–324 (1992)CrossRefGoogle Scholar
- 13.G. Solkner, C. Wolfgang, Advanced diagnosis techniques for sub um IC’s. Microelectron. Eng., 11–16 (1994)Google Scholar