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Tunneling Transport Between Transition Metal Dichalcogenides

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Layered Two-Dimensional Heterostructures and Their Tunneling Characteristics

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Abstract

Over the last 5 years, many groups have worked to fabricate vertical tunneling devices using graphene, h-BN, and 2D semiconducting transition metal dichalcogenides (TMDs). Within our own collaboration, we sought to make devices exhibiting both resonant tunneling (between like bands in either electrode) and steep switching (between unlike bands). Presently, there have been several successful reports of negative differential resistance (NDR) in a number of devices [1–3], beyond the graphene ones discussed in Chaps. 7 and 8. An even greater number of studies have resulted in 2D devices with a similar vertical geometry that display neither NDR nor steep switching based on vertical tunneling [4–7]. It is the goal of this chapter to discuss efforts within our collaboration to grow vertical 2D heterostructures and study their properties with low-energy electron microscopy, relating the results when possible to tunneling transport characteristics.

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  1. Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania, USA

    Sergio C. de la Barrera

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de la Barrera, S.C. (2017). Tunneling Transport Between Transition Metal Dichalcogenides. In: Layered Two-Dimensional Heterostructures and Their Tunneling Characteristics. Springer Theses. Springer, Cham. https://doi.org/10.1007/978-3-319-69257-9_4

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