Abstract
Performances of phase change memories (PCMs) are intimately linked to the properties of the integrated phase change material, and huge research efforts are devoted to optimize materials for specific memory applications. The outstanding properties of chalcogenide phase change materials are reviewed in this chapter. The structural and physical properties of the amorphous and crystalline states are illustrated by focusing on two prototypical phase change alloys (Ge2Sb2Te5 and GeTe). The origin of the electrical contrast between the amorphous and crystalline states of phase change materials and the nature of the crystallization mechanisms are also discussed. Then, focus is placed on material science issues related with current technological challenges met by PCMs. In particular, we show how dopants affect the structure of the amorphous phase and enhance its stability, and we examine the link between the resistance drift of the amorphous state and structural changes occurring during aging. Finally we show how interface and oxidation effects affect the crystallization temperature and crystallization mechanism.
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Abbreviations
- AIMD:
-
Ab initio molecular dynamics
- AIST:
-
Ag- and In-doped Sb2Te
- ALD:
-
Atomic layer deposition
- CD-RW:
-
Compact disc rewritable
- CMOS:
-
Complementary metal-oxide-semiconductor
- CN:
-
Coordination number
- CVD:
-
Chemical vapor deposition
- DC:
-
Direct current
- DCD:
-
Diffractive coherent domain
- DFT:
-
Density functional theory
- DoS :
-
Density of states
- DRAM:
-
Dynamic random access memory
- DSC:
-
Differential scanning calorimetry
- DVD:
-
Digital versatile disc
- DVD-RAM:
-
Digital versatile disc random access memory
- DVD-RW:
-
Digital versatile disc rewritable
- EXAFS:
-
Extended X-ray absorption fine structure
- fcc:
-
Face-centered cubic
- FTIR:
-
Fourier-transform infrared spectroscopy
- FWHM:
-
Full width at half maximum
- GST:
-
Alloys located on the pseudo-binary line connecting GeTe and Sb2Te3 in the ternary Ge-Sb-Te phase diagram
- MD:
-
Molecular dynamics
- MLC:
-
Multilevel cell
- MOCVD:
-
Metal-organic chemical vapor deposition
- PCM:
-
Phase change memory
- PCRAM:
-
Phase change random access memory
- PDF:
-
Pair distribution function
- PECVD:
-
Plasma-enhanced chemical vapor deposition
- PVD:
-
Physical vapor deposition
- RAM :
-
Random access memory
- RF:
-
Radio frequency
- SEM:
-
Scanning electron microscopy
- STEM:
-
Scanning transmission electron microscopy
- TEM:
-
Transmission electron microscopy
- T g :
-
Glass transition temperature
- T melt :
-
Melting temperature
- T x :
-
Crystallization temperature
- VDoS:
-
Vibrational density of states
- XANES :
-
X-ray absorption near-edge structure
- XAS :
-
X-ray absorption spectroscopy
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Acknowledgments
We thank Dr. J.-Y. Raty (FNRS, University of Liège) for his constant and friendly support and numerous fruitful discussions on phase change material science. P. N. acknowledges the PCM team in LETI. This work has been supported in part by ST-LETI bilateral program A, European 621217-PANACHE project, LabEx MINOS ANR-10-LABX-55-01, and the SESAME project ANR-15-CE24-0021. SOLEIL, ESRF, and the Italian beamline LISA at ESRF are acknowledged for granting synchrotron beam time. Dr. F. D’Acapito (CNR-IOM-OGG c/o ESRF) is also acknowledged for his support during EXAFS experiments, friendship, and outstanding XAS data analysis expertise. We sincerely acknowledge the past and present students and our long-standing close collaborators and also friends who contributed to this work: G.E. Ghezzi, M. Aoukar, M. Marra, P.-D. Szkutnik, P. Kowalczyk, P. Montéléon, C. Sabbione, M. Bernard, L. Fellouh, F. Fillot, N. Bernier, C. Licitra, V. Sousa, G. Navarro, V. Jousseaume, P.-H. Haumesser, and all those we may have forgotten.
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Noé, P., Hippert, F. (2018). Structure and Properties of Chalcogenide Materials for PCM. In: Redaelli, A. (eds) Phase Change Memory. Springer, Cham. https://doi.org/10.1007/978-3-319-69053-7_6
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