Abstract
In order to more deeply understand the PCM basic working principles and to better translate them into a real, working device, the PCM thermal model considerations, the fragility-related behavior of the phase change material, and the phase change material ionic motion aspects represent fundamental steps of the path. This chapter will be devoted on one hand to the insights into the cell thermal parameters, studied thanks to electrical measurements and aiming at the comprehension of the thermal resistance behavior in real PCM devices. On the other hand, the chapter will be focused on the discussion of advanced properties involving the phase change materials when heated up, in terms of both their fragility behavior and the relationship between fragility, viscosity and crystallization velocity, and the ionic motion effects. Concerning the thermal model, the discussion will be focused on some remarkable parameters, like thermal resistance, melting temperature, and power dissipation, their experimental evaluation and how much they are impacted by the geometry, and by the phase change material integrated into the PCM cell. Fragility is one of the characteristics making some phase change materials unique or a stronger material close to the glass temperature and a more flexible material close to the melting temperature. Understanding the ion migration effects during operation represents, instead, a mandatory step to enable the overcoming of possible issues at high number of cycles, derived from the fact that the phase change material goes through changes and hence cannot be considered as a uniform compound along its lifetime. So, on one hand, a successful implementation of PCM requires careful analysis and engineering of heat generation and thermal resistance from the cell core toward the outer thermal boundaries, and this represents a very important stage for power consumption optimization and for the SET operation performance. On the other hand, the SET operation itself as well as the reliability of PCM through lifetime is directly linked to the material and its specific alloy in terms of fragility behavior and elemental migration, respectively.
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References
S. Ovshinsky, H. Fritzsche, Amorphous semiconductors for switching, memory and imaging applications. IEEE Trans. Electron Devices. 20(2), 91–105 (1973)
M. Boniardi et al., Optimization metrics for phase change memory (PCM) cell architectures. IEEE Int. Electron Device Meet. IEDM Tech. Dig., 29.1.1–29.1.4 (2014)
A.L. Lacaita et al., The race of phase change memories to nanoscale storage and applications. Microelectron. Eng. 109, 351–356 (2013)
T. Siegrist et al., Disorder-induced localization in crystalline phase-change materials. Nat. Mater. 10, 202–208 (2011)
L. Crespi et al., Electrical conductivity discontinuity at melt in phase change memory. IEEE Electron Device Lett. 35(7), 747–749 (2014)
A. Redaelli et al., Threshold switching and phase transition numerical models for phase change memory simulations. J. Appl. Phys. 103, 111101 (2008)
M. Boniardi et al., Electrical and thermal behavior of Tellurium poor GeSbTe compounds for phase change memory, in Proceedings of International Memory Workshop (IMW), 2012
A. L. Lacaita et al., Electrothermal and phase-change dynamics in chalcogenide-based memories, in IEEE International Electron Device Meeting (IEDM) Technical Digest, 2004
M. Boniardi et al., Internal temperature extraction in phase-change memory cells during the reset operation. IEEE Electron Device. Lett. 33(4), 594–596 (2012)
A. Sebastian et al., Crystal growth within a phase change memory cell. Nat. Commun. 5, 4314, 1–9 (2014)
F. Pellizzer et al., Novel μtrench phase-change memory cell for embedded and stand-alone non-volatile memory applications, in Symposium on VLSI Technology, Digest of Techical Papers, 2004, pp. 18–19
F. Pellizzer et al., A 90nm phase change memory technology for stand-alone non-volatile memory applications, in Symposium on VLSI Technology, Digest of Technical Papers, 2006
G. Servalli, A 45nm generation phase change memory technology. Int. Electron Device Meet. IEDM Tech. Dig. 113–116 (2009)
A. Redaelli et al., Interface engineering for thermal disturb immune phase change memory technology. IEEE Int. Electron Device Meet. IEDM Tech. Dig., 750–753 (2013)
B. Legendre et al., Phase diagram of the ternary system Ge-Sb-Te. I. The subternary GeTe – Sb2Te3 – Te. Thermochim. Acta 78, 141–157 (1984)
S. Bordas et al., Phase diagram of the ternary system Ge-Sb-Te. II. The subternary Ge – GeTe – Sb2Te3 – Sb. Thermochim. Acta 107, 239–265 (1986)
P.G. Debenedetti et al., Supercooled liquids and the glass transition. Nature Rev. Artic. 410, 259–267 (2001)
C.A. Angell, Formation of glasses from liquids and biopolimers. Science 267, 1924–1935 (1995)
J. Orava et al., Characterization of supercooled liquid Ge2Sb2Te5 and its crystallization by ultrafast-heating calorimetry. Nat. Mater. 11, 279–283 (2012)
J. Orava et al., Ultra-fast calorimetry study of Ge2Sb2Te5 crystallization between dielectric layers. Appl. Phys. Lett. 101, 091906 (2012)
M.D. Ediger et al., Crystal growth kinetics exibit a fragility-dependent decoupling from viscosity. J. Chem. Phys. 128, 034709 (2008)
G.C. Sosso et al., Dynamical heterogeneity in the supercooled liquid state of the phase change material GeTe. J. Phys. Chem. B 118, 13621 (2014)
B. Rajendran et al., On the dynamic resistance and reliability of phase change memory. Symp.VLSI Technol. Dig. Tech. Pap. 96–97 (2008)
M. Boniardi et al., Study of cycling-induced parameter variations in phase change memory cells. IEEE Electron Device Lett. 34(7), 882–884 (2013)
G. Novielli et al., Atomic migration in phase change materials. IEEE Int. Electron Device Meet. IEDM Tech. Dig. 589–592 (2013)
T.-Y. Yang et al., Atomic migration in molten and crystalline Ge2Sb2Te5 under high electric field. Appl. Phys. Lett. 95, 032104 (2009)
D. Kang et al., Analysis of the electric field induced elemental separation of Ge2Sb2Te5 by transmission electron microscopy. Appl. Phys. Lett. 95, 011904 (2009)
A. Padilla et al., Voltage polarity effects in Ge2Sb2Te5-based phase change memory devices. J. Appl. Phys. 110, 054501 (2011)
S.-W. Nam et al., Phase separation behavior of Ge2Sb2Te5 line structure during electrical stress biasing. Appl. Phys. Lett. 92, 111913 (2008)
T.–.Y. Yang et al., Influence of dopants on atomic migration and void formation in molten Ge2Sb2Te5 under high-amplitude electrical pulse. Acta Mater. 60, 2021–2030 (2012)
L. Crespi et al., Modeling of Atomic Migration Phenomena in Phase Change Memory Devices, in Proceedings of International Memory Workshop (IMW), 2015
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Boniardi, M. (2018). Thermal Model and Remarkable Temperature Effects on the Chalcogenide Alloy. In: Redaelli, A. (eds) Phase Change Memory. Springer, Cham. https://doi.org/10.1007/978-3-319-69053-7_3
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DOI: https://doi.org/10.1007/978-3-319-69053-7_3
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