Abstract
This Chapter begins by a short historical overview paying tribute to some ground breaking works that shaped the science of optics and photography. A brief concentrated state of the art recalling the main technological device-level trends in modern image sensors and sensitive solid state visible photons detectors are summarized. The motivations behind this work are pointed out, the main contributions are summarized and the organisation of this manuscript is presented.
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References
A.M. Smith, Getting the big picture in perspectivist optics. Isis 72(4), 568–589 (1981)
D. Lindberg, Theories of Vision from Al-kindi to Kepler. Chicago History of Science and Medicine (University of Chicago Press, Chicago, 1981), pp. 58–86
History of kodak, http://www.kodak.com/US/en/corp/kodakHistory/. Accessed 29 Apr 2016
W. Boyle, G. Smith, Buried channel charge coupled devices, Patent US 3,792,322 (1974), https://www.google.com/patents/US3792322
M. Tompsett, Charge transfer imaging devices, Patent US 4,085,456 (1978), https://www.google.com/patents/US4085456
R. Fontaine, Innovative technology elements for large and small pixel cis devices, in International Image Sensors Workshop (2013)
Y. Chen, Y. Xu, Y. Chae, A. Mierop, X. Wang, A. Theuwissen, A 0.7e-rms temporal-readout-noise cmos image sensor for low-light-level imaging, in 2012 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC) (2012), pp. 384 –386
C. Lotto, P. Seitz, T. Baechler, A sub-electron readout noise cmos image sensor with pixel-level open-loop voltage amplification, in 2011 IEEE International Solid-State Circuits Conference (2011), pp. 402–404
A. Boukhayma, A. Peizerat, C. Enz, Temporal readout noise analysis and reduction techniques for low-light cmos image sensors. IEEE Trans. Electron Devices 63(1), 72–78 (2016)
S. Wakashima, F. Kusuhara, R. Kuroda, S. Sugawa, A linear response single exposure cmos image sensor with 0.5e- readout noise and 76ke- full well capacity, in 2015 Symposium on VLSI Circuits (VLSI Circuits) (2015), pp. C88–C89
M.H. White, D.R. Lampe, F.C. Blaha, I.A. Mack, Characterization of surface channel ccd image arrays at low light levels. IEEE J. Solid-State Circuits 9(1), 1–12 (1974)
M.S. Robbins, B.J. Hadwen, The noise performance of electron multiplying charge-coupled devices. IEEE Trans. Electron Devices 50(5), 1227–1232 (2003)
E. Charbon, Single-photon imaging in complementary metal oxide semiconductor processes. Philos. Trans. R. Soc. Lond. A Math. Phys. Eng. Sci. 372, 2014 (2012)
E. Fossum, The quanta image sensor (qis): concepts and challenges, in Imaging and Applied Optics (Optical Society of America, 2011), p. JTuE1, http://www.osapublishing.org/abstract.cfm?URI=COSI-2011-JTuE1
Dxomark, https://www.dxomark.com/. Accessed 29 Apr 2016
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Boukhayma, A. (2018). Introduction. In: Ultra Low Noise CMOS Image Sensors . Springer Theses. Springer, Cham. https://doi.org/10.1007/978-3-319-68774-2_1
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DOI: https://doi.org/10.1007/978-3-319-68774-2_1
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