Abstract
Electronic devices have become extremely prominent in everyday life, and it is now commonplace for them to control critical tasks, such as managing financial transactions. Therefore, it is of key importance that these devices can be securely identified to prevent illegitimate parties mimicking themselves as genuine, and gaining access to sensitive information. The popular methods of identification currently in use rely on the end user providing some information about themselves, such as a fingerprint or a password, but these authentication methods are known to be extremely vulnerable. Identities can also be provided by systems that exploit physical disorder, but there is a growing need for the security to be as robust as physically possible. Resonant tunneling diodes (RTDs), can provide such an uncomplicated measurement of identity, corresponding to the straightforward measurement of the macroscopic current that passes through the device.
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Bibliography
M. Cahay, J.P. Leburton, D.J. Lockwood, S. Bandyopadhyay, Quantum Confinement: Nanoscale Materials, Devices, and Systems (The Electrochemical Society, New Jersey, 1997)
R. Nötzel et al., Uniform quantum-dot arrays formed by natural self faceting on patterned substrates. Nature 392, 56 (1998)
G. Juska et al., Towards quantum-dot arrays of entangled photon emitters. Nat. Photonics 7, 527 (2013)
A. Mohan et al., Polarization-entangled photons produced with high-symmetry site-controlled quantum dots. Nat. Photonics 4, 302 (2010)
M. Ramsteiner et al., Influence of composition fluctuations in Al(Ga)As barriers on the exciton localization in thin GaAs quantum wells. Phys. Rev. B. 55, 5239 (1997)
M. Tsuchiya, H. Sakaki, Dependence of resonant tunneling current on well widths in AlAs/GaAs/AlAs double barrier diode structures. Appl. Phys. Lett. 49, 88 (1986)
D. Gammon et al., Fine structure splitting in the optical spectra of single GaAs quantum dots. Phys. Rev. Lett. 76, 16 (1996)
R.J. Young et al., Inversion of exciton level splitting in quantum dots. Phys. Rev. B. 72, 113305 (2005)
A. Gruber, Scanning confocal optical microscopy and magnetic resonance on single defect centres. Science 276, 5321 (1997)
E.F. Schubert, Doping in III–V Semiconductors (Cambridge University Press, 1993)
W. Pötz, Z.Q. Li, Imperfections and resonant tunneling in quantum-well heterostructures. Solid State Electron. 32, 12 (1989)
J.J. Pla et al., A single-atom electron spin qubit in silicon. Nature 489, 541 (2012)
W. Nakwaski, Thermal conductivity of binary, ternary, and quaternary III–V compounds. J. Appl. Phys. 64, 159 (1988)
D.A. Drabold, S. Estreicher, Theory of Defects in Semiconductors (Springer, Berlin, 2007)
E.P. Smakman et al., GaSB/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy. Appl. Phys. Lett. 100, 142116 (2012)
L.G. Wang et al., Size, shape, and stability of InAs quantum dots on the GaAs(001) Substrate. Phys. Rev. B. 62, 1897 (2000)
N.J. Orfield et al., Correlation of atomic structure and photoluminescence of the same quantum dot: pinpointing surface and internal defects that inhibit photoluminescence. ACS Nano 9, 1 (2015)
K.N. Kwok, Complete Guide to Semiconductor Devices (Wiley, 2010)
V.J. Goldman et al., Observation of intrinsic bistability in resoannt tunneling structures. Phys. Rev. Lett. 58, 1256 (1987)
T.C.L.G. Sollner, Comment on ‘Observation of intrinsic bistability in resoannt tunneling structures’. Phys. Rev. Lett. 59, 1622 (1987)
P. Zhao et al., Simulation of resonant tunneling structures: origin of the I–V hysteresis and plateau-like structure. J. Appl. Phys. 87, 1337 (2000)
M.A.M. Zawawi et al., Fabrication of sub-micrometer InGaAs/AlAs resonant tunneling diode using a tri-layer soft reflow technique with excellent scalability. IEEE Trans. Electron Devices 61, 2338–2342 (2014)
V.A. Wilkinson et al., Tunnel devices are not yet manufacturable. Semicond. Sci. Technol. 12, 91–99 (1997)
M.J. Kelly, New statistical analysis of tunnel diode barriers. Semicond. Sci. Technol. 15, 79–83 (2000)
P. Dasmahapatra et al., Thickness control of molecular beam epitaxy grown layers at the 0.01–0.1 monolayer level. Semicond. Sci. Technol. 27, 085007 (2012)
C. Shao et al., Achieving reproducibility needed for manufacturing semiconductor tunnel devices. Electron. Lett. 49, 10 (2013)
M. Missous et al., Extremely uniform tunnel barriers for low-cost device manufacture. IEEE Electron Device Lett. 36, 6 (2015)
M.J. Kelly, The unacceptable variability in tunnel current for proposed electronic device applications. Semicond. Sci. Technol. 21, L49–L51 (2006)
A. Tchegho et al., Scalable high-current density RTDs with low series resistance, in IEEE International Conference on Indium Phosphide & Related Materials (2010)
K.J.P. Jacobs et al., A dual-pass high current density resonant tunneling diode for terahertz wave applications. IEEE Electron Device Lett. 36, 12 (2015)
M. Bâzu, & T. Băjenescu, Failure Analysis A Practical Guide for Manufacturers of Electronic Components and Systems (Wiley, 2011)
S.F. Nafea, A.A.S. Dessouki, An accurate large-signal SPICE model for resonant tunneling diode, in IEEE International Conference on Microelectronics (2010)
W. Lian, Resonant Tunneling Diode Mixer and Multiplier, Simon Fraser University Thesis (1994)
R. Maes, Physically Unclonable Functions (Springer, Berlin, 2013)
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Roberts, J. (2017). Unique Identification with Resonant Tunneling Diodes. In: Using Imperfect Semiconductor Systems for Unique Identification. Springer Theses. Springer, Cham. https://doi.org/10.1007/978-3-319-67891-7_4
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DOI: https://doi.org/10.1007/978-3-319-67891-7_4
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