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Temperature Fields in the In/CdTe Structure Under Laser-Induced Doping in Liquid

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Recent Advances in Technology Research and Education (INTER-ACADEMIA 2017)

Abstract

In/CdTe barrier structures formed by laser irradiation of CdTe crystals pre-coated with an In dopant film are the subject of study. The computational simulation of thermal processes and calculations of the time-dependent temperature distributions in the structure of water environment (3–5 mm)/In film (400 nm)/CdTe crystal (0.5 mm) under irradiation from the In film side in water with KrF excimer laser pulses (λ = 248 nm, τ = 20 ns) have been performed. An implicit finite difference method with smoothed coefficients and permissible cooling due to “evaporation” of In atoms from the dopant film surface and boiling of a water layer adjacent to the metal was used. The minimum laser pulse energy density necessary for melting of the whole In film was determined as E = 1300 J/m2, however the temperature at the In/CdTe interface did not reach the CdTe melting point even at higher E = 1500 J/m2. It was shown that cooling due to “evaporation” of In atoms and boiling of the surrounding water layer did not significantly effect the laser heating process.

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Acknowledgement

This research was partly supported by the NATO Science for Peace and Security Programme (Project SENERA, SfP-984705) and Bilateral Cooperative Program of The State Fund for Fundamental Researches of Ukraine (SFFR) and The Japan Society for the Promotion of Science (JSPS) (Grant No Ф68/54-2016).

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Correspondence to V. A. Gnatyuk .

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Gnatyuk, V.A., Dubov, V.L., Fomin, D.V., Seteikin, A.Y., Aoki, T. (2018). Temperature Fields in the In/CdTe Structure Under Laser-Induced Doping in Liquid. In: Luca, D., Sirghi, L., Costin, C. (eds) Recent Advances in Technology Research and Education. INTER-ACADEMIA 2017. Advances in Intelligent Systems and Computing, vol 660. Springer, Cham. https://doi.org/10.1007/978-3-319-67459-9_12

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  • DOI: https://doi.org/10.1007/978-3-319-67459-9_12

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