Abstract
The intent of this chapter is to introduce the radiation effects and give a general understanding of radiation damage – its mechanism, microscopic and macroscopic effects.
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The term “diffusion” used here is more a descriptive one combining effects like diffusion, migration, break-up, re-configuration of defects or better reactions between defects propagating through lattice – also often summarized by the term “annealing”.
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ROSE: R&D On Silicon for future Experiments.
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Reminder: acceptors are introducing negative, donors respectively positive, space charge.
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Reverse annealing is also often described in literature (e.g. [107, 266, 267]) as a second-order effect with a parameterization of \(\left[ 1-\frac{1}{1+t/\tau _y}\right] \), describing accurately \(N_{eff}\) versus time for long annealing times at higher temperatures. Nevertheless, the physical mechanism is ruled out due to the missing dependency of the effect on fluence. The rate, depending on the probability of two defects combining, does not increase with the number of defects.
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ATLAS and CMS pixels use n-in-n technology where most of the charge is induced by electrons, while for standard strip p-in-n sensors most of the charge is induced by holes.
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mCz: CZ crystal growth in a magnetic field to achieve a homogeneous oxygen distribution.
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Note that this violates the NIEL hypothesis.
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An applied magnetic field during the melt creates an electric current distribution and an induced magnetic field. The active Lorentz force then dampens the oscillations in the melt, resulting in a more homogeneous oxygen distribution.
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With higher and higher “depletion voltages” even above a possible operation voltage, the only important parameter is the collected charge at the amplifier.
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Hartmann, F. (2017). Radiation Damage in Silicon Detector Devices. In: Evolution of Silicon Sensor Technology in Particle Physics. Springer Tracts in Modern Physics, vol 275. Springer, Cham. https://doi.org/10.1007/978-3-319-64436-3_2
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DOI: https://doi.org/10.1007/978-3-319-64436-3_2
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