Abstract
This chapter illustrates the oxidation of silicon, starting from the description of the chemical reactions involved in it, and deriving the relation between the thickness of the oxide layer and that of the silicon layer consumed in its growth. The kinetics of the oxide growth is analyzed, the linear–parabolic model is worked out, and its features are commented. Then, a brief description of the deposition processes is given, followed by the description of the chemical reaction involved in the epitaxial process and by the analysis of the epitaxial kinetics. In the last part of this chapter a number of complementary issues are discussed.
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References
G. Baccarani, Dispositivi mos (Pàtron, Bologna, 1982) (in Italian)
B.E. Deal, A.S. Grove, General relationship for the thermal oxidation of silicon. J. Appl. Phys. 36, 3770 (1965)
A.S. Grove, Physics and Technology of Semiconductor Devices (Wiley, New York, 1967)
R.A. Levy (ed.), Microelectronics Materials and Processes, vol. E-164 of nato asi (Kluwer, Boston, 1986)
W. Maly, Atlas of ic Technologies: An Introduction to vlsi Processes (The Benjamin/Cummings Publishing, Menlo Park, 1987)
S.M. Sze, Semiconductor Devices — Physics and Technology (Wiley, New York, 1985)
S.M. Sze, vlsi Technology (McGraw-Hill, New York, 1988)
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Rudan, M. (2018). Thermal Oxidation—Layer Deposition. In: Physics of Semiconductor Devices. Springer, Cham. https://doi.org/10.1007/978-3-319-63154-7_24
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DOI: https://doi.org/10.1007/978-3-319-63154-7_24
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