Abstract
In the last few decades, semiconductor technology has steadily grown in maturity, with silicon transistors able to reach increasingly higher unity-gain frequency (\( f_{ \hbox{max} } \)) values. This has proven to be true for technologies based on both CMOS and SiGe BiCMOS. Higher \( f_{ \hbox{max} } \) values in turn lead to transistors that are suitable for highly complex integrated circuits operating in millimeter-wave bands. The large performance gains observed in signal processing and other digital circuits based on silicon technologies serve as an excellent motivator for the continued advancement of such technologies, particularly CMOS.
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References
Doan, C.H., Emami, S., Niknejad, A.M., Brodersen, R.W.: Millimeter-wave CMOS design. IEEE J. Solid-State Circuits 40(1), 144–154 (2005)
Harame, D.L., Member, S., Ahlgren, D.C.: Current status and future trends of SiGe BiCMOS technology. IEEE Trans. Electron Devices 48(11), 2575–2594 (2001)
Cressler, J.D., Niu, G.: Silicon-Germanium heterojunction bipolar transistors. Artech House, Inc., Norwood (2003)
Neamen, D.A.: Microelectronics: Circuit Analysis and Design, 4th ed. McGraw-Hill, New York (2010)
Gonzalez, G.: Microwave Transistor Amplifiers: Analysis and Design, 2nd ed. Prentice Hall, Upper Saddle River (1996)
Neamen, D.A.: Semiconductor Physics and Devices: Basic Principles. McGraw-Hill, New York (2003)
Hu, C.C.: Modern Semiconductor Devices for Integrated Circuits. Pearson Education, Inc., Upper Saddle River (2009)
Cressler, J.D.: SiGe HBT technology: a new contender for Si-Based RF and microwave circuit applications. IEEE Trans. Microw. Theory Tech. 46(5), 572–589 (1998)
Harame, D., Larson, L., Case, M.: SiGe HBT technology: device and application issues. IEEE Trans. Electron Devices 914, 731–734 (1995)
Pawlak, A., Lehmann, S., Sakalas, P., Krause, J., Aufinger, K., Ardouin, B., Schroter, M.: SiGe HBT modeling for mm-wave circuit design. In: Proceedings of IEEE Bipolar/BiCMOS Circuits Technology Meeting, vol. 2015–Nov, pp. 149–156 (2015)
Hashemi, H., Raman, S. (eds.): mm-Wave Silicon Power Amplifiers and Transmitters. Cambridge University Press, Cambridge, United Kingdom (2016)
Ghazinour, A., Wennekers, P., Reuter, R., Yi, Y., Li, H., Böhm, T., Jahn, D.: An integrated SiGe-BiCMOS low noise transmitter chip with a frequency divider chain for 77 GHz applications. In: Proceedings of the 1st European Microwave Integrated Circuits Conference (EuMIC), pp. 194–197 (2006)
Winkler, W., Borngraber, J., Gustat, H., Korndorfer, F.: 60 GHz transceiver circuits in SiGe: C BiCMOS technology. In: Proceedings of the 30th European Solid-State Circuits Conference, pp. 83–86 (2004)
Harame, D.L., Comfort, J.H., Crabb, E.F., Sun, J.Y.C., Meyerson, B.S., Cressler, J.D., Tice, T.: Si/SiGe epitaxial-base transistors—part i: materials, physics, and circuits. IEEE Trans. Electron Devices 42(3), 455–468 (1995)
Rieh, J.S., Jagannathan, B., Chen, H., Schonenberg, K.T., Angell, D., Chinthakindi, A., Florkey, J., Golan, F., Greenberg, D., Jeng, S.J., Khater, M., Pagette, F., Schnabel, C., Smith, P., Stricker, A., Vaed, K., Volant, R., Ahlgren, D., Freeman, G., Stein, K., Subbanna, S.: SiGe HBTs with cut-off frequency of 350 GHz. In: International Electron Devices Meeting, pp. 771–774 (2002)
Sarmah, N., Grzyb, J., Statnikov, K., Malz, S., Rodriguez Vazquez, P., Föerster, W., Heinemann, B., Pfeiffer, U.R.: A fully integrated 240-GHz direct-conversion quadrature transmitter and receiver chipset in SiGe technology. IEEE Trans. Microw. Theory Tech. 64(2), 562–574 (2016)
Statnikov, K., Grzyb, J., Heinemann, B., Pfeiffer, U.R.: 160-GHz to 1-THz multi-color active imaging with a lens-coupled SiGe HBT chip-set. IEEE Trans. Microw. Theory Tech. 63(2), 520–532 (2015)
Chai, F.K., Reuter, R., Baker, T., Zupac, D., Kirchgessner, J.: Outstanding noise characteristics of SiGe: C HBT allow flexibility in high-frequency RF designs. In: IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, pp. 151–154 (2003)
Niu, G., Cressler, J.D., Zhang, S., Joseph, A., Harame, D.: Noise-gain tradeoff in RF SiGe HBTs. In: Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), vol. 2, no. 6, pp. 187–191 (2001)
Niu, G.: Noise in SiGe HBT RF technology: physics, modeling, and circuit implications. Proc. IEEE 93(9), 1583–1597 (2005)
d’Alessandro, V., Sasso, G., Rinaldi, N., Aufinger, K.: Experimental DC extraction of the base resistance of bipolar transistors: application to SiGe: C HBTs. IEEE Trans. Electron Devices 63(7), 1–9 (2016)
Van Haaren, B., Régis, M., Llopis, O., Escotte, L., Grüble, A., Mähner, C., Plana, R., Graffeuil, J.: Low-frequency noise properties of SiGe HBT’s and application to ultra-low phase-noise oscillators. IEEE Trans. Microw. Theory Tech., 46(5)PART 2, 647–652 (1998)
Vempati, L.S., Cressler, J.D., Babcock, J.A., Jaeger, R.C., Harame, D.L.: Low-frequency noise in UHV/CVD epitaxial Si and SiGe bipolar transistors. IEEE J. Solid-State Circuits 31(10), 1458–1466 (1996)
Borgarino, M., Bary, L., Vescovi, D., Menozzi, R., Monroy, A., Laurens, M., Plana, R., Fantini, F., Graffeuil, J., Member, S.: The correlation resistance for low-frequency noise compact modeling of Si/SiGe HBTs. IEEE Trans. Electron Devices 49(5), 863–870 (2002)
Bruce, S.P.O.: Measurement of low-frequency base and collector current noise and coherence in SiGe heterojunction bipolar transistors using transimpedance amplifiers. IEEE Trans. Electron Devices 46(5), 993–1000 (1999)
Rodwell, M.J.W., Urteaga, M., Mathew, T., Scott, D., Mensa, D., Lee, Q., Guthrie, J., Betser, Y., Martin, S.C., Smith, R.P., Jaganathan, S., Krishnan, S., Long, S.I., Pullela, R., Agarwal, B., Bhattacharya, U., Samoska, L., Dahlstrom, M.: Submicron scaling of HBTs. IEEE Trans. Electron Devices 48(11), 2606–2624 (2001)
Harame, D.L., Comfort, J.H., Crabb, E.F., Sun, J.Y.C., Meyerson, B.S., Cressler, J.D., Tice, T.: Si/SiGe epitaxial-base transistors part II: process integration and analog applications. IEEE Trans. Electron Devices 42(3), 469–482 (1995)
Cheng, P., Liu, Q., Camillo-Castillo, R., Liedy, B., Adkisson, J., Pekarik, J., Gray, P., Kaszuba, P., Moszkowicz, L., Zetterlund, B., MacHa, K., Tallman, K., Khater, M., Harame, D., A novel Ccb and Rb reduction technique for high-speed SiGe HBTs. In: Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 8–11 (2012)
Camillo-Castillo, R.A., Liu, Q.Z., Adkisson, J.W., Khater, M.H., Gray, P.B., Jain, V., Leidy, R.K., Pekarik, J.J., Gambino, J.P., Zetterlund, B., Willets, C., Parrish, C., Engelmann, S.U., Pyzyna, A.M., Cheng, P., Harame, D.L.: SiGe HBTs in 90 nm BiCMOS technology demonstrating 300/420 GHz fT/fMAX through reduced Rb and Ccb parasitic. In: IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 227–230 (2013)
Enz, C.: A MOS transistor model for RF IC design valid in all regions of operation. IEEE Trans. Microw. Theory Tech. 50(1), 342–359 (2002)
Frank, D.J., Dennard, R.H., Nowak, E., Solomon, P.M., Taur, Y., Wong, H.S.P.: Device scaling limits of Si MOSFETs and their application dependencies. Proc. IEEE 89(3), 259–287 (2001)
Taur, Y., Buchanan, D.A., Chen, W., Frank, D.J., Ismail, K.E., Shih-Hsien, L.O., Sai-Halasz, G.A., Viswanathan, R.G., Wann, H.J.C., Wind, S.J., Wong, H.S.: CMOS scaling into the nanometer regime. Proc. IEEE 85(4), 486–503 (1997)
Wicks, B.N., Skafidas, E., Evans, R.J.: A 75–95 GHz wideband CMOS power amplifier. European Microwave Integrated Circuits Conference, pp. 554–557, Oct 2008
Mitomo, T., Ono, N., Hoshino, H., Yoshihara, Y., Watanabe, O., Seto, I.: A 77 GHz 90 nm CMOS transceiver for FMCW radar applications. IEEE J. Solid-State Circuits 45(4), 928–937 (2010)
Fritsche, D., Tretter, G., Carta, C., Ellinger, F.: Millimeter-wave low-noise amplifier design in 28-nm low-power digital CMOS. IEEE Trans. Microw. Theory Tech. 63(6), 1910–1922 (2015)
Heydari, B., Bohsali, M., Adabi, E., Niknejad, A.M.: A 60 GHz power amplifier in 90 nm CMOS technology. In: IEEE Custom Integrated Circuits Conference, no. Cicc, pp. 769–772 (2007)
Makunda, B.D.: Millimeter-wave performance of ultrasubmicrometer—gate field-effect transistors: a comparison of MODFET, MESFET and PBT structures. IEEE Trans. Electron Devices, ED-34(7), 1429–1440 (1987)
Tasker, P.J., Hughes, B.: Importance of source and drain resistance to the maximum fT of millimeter-wave MODFET’s. IEEE Electron Device Lett. 10(7), 291–293 (1989)
Niknejad, A.M., Hashemi, H.: Mm-Wave Silicon Technology: 60Â GHz and Beyond. Springer, US, New York (2008)
Shigematsu, H., Hirose, T., Brewer, F., Rodwell, M.: Millimeter-wave CMOS circuit design. IEEE Trans. Microw. Theory Tech. 53(2), 472–477 (2005)
Razavi, B.: Design of millimeter-wave CMOS radios: a tutorial. IEEE Trans. Circuits Syst. I Regul. Pap. 56(1), 4–16 (2009)
Rappaport, T.S., Murdock, J.N., Gutierrez, F.: State of the art in 60-GHz integrated circuits and systems for wireless communications. Proc. IEEE 99(8), 1390–1436 (2011)
Johnson, E.: Physical limitations on frequency and power parameters of transistors. IRE Int. Conv. Rec. 13, 27–34 (1965)
Mimura, T.: The early history of the high electron mobility transistor (HEMT). IEEE Trans. Microw. Theory Tech. 50(3), 780–782 (2002)
Brehm, G.E.: Trends in microwave/millimeter-wave front-end technology. In: 1st European Microwave Integrated Circuits Conference (IEEE Cat. No.06EX1410), no. Sep, 4Â pp. |CD-pp.ROM (2006)
Tang, Y., Shinohara, K., Regan, D., Corrion, A., Brown, D., Wong, J., Schmitz, A., Fung, H., Kim, S., Micovic, M.: Ultrahigh-speed GaN high-electron-mobility transistors with fT/fmax of 454/444 GHz. IEEE Electron Device Lett. 36(6), 549–551 (2015)
Mishra, B.U.K., Shen, L., Kazior, T.E., Wu, Y.: GaN-based RF power devices and amplifiers. Proc. IEEE 96(2), 287–305 (2008)
Shinohara, K., Regan, D., Corrion, A., Brown, D., Burnham, S., Willadsen, P.J., Alvarado-Rodriguez, I., Cunningham, M., Butler, C., Schmitz, A., Kim, S., Holden, B., Chang, D., Lee, V., Ohoka, A., Asbeck, P.M., Micovic, M.: Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency. In: International Electron Devices Meeting (IEDM), vol. 2, pp. 453–456 (2011)
Shinohara, K., Regan, D.C., Tang, Y., Corrion, A.L., Brown, D.F., Wong, J.C., Robinson, J.F., Fung, H.H., Schmitz, A., Oh, T.C., Kim, S.J., Chen, P.S., Nagele, R.G., Margomenos, A.D., Micovic, M.: Scaling of GaN HEMTs and schottky diodes for submillimeter-wave MMIC applications. IEEE Trans. Electron Devices 60(10), 2982–2996 (2013)
Corrion, A.L., Shinohara, K., Regan, D., Milosavljevic, I., Hashimoto, P., Willadsen, P.J., Schmitz, A., Wheeler, D.C., Butler, C.M., Brown, D., Burnham, S.D., Micovic, M.: Enhancement-mode AlN/GaN/AlGaN DHFET with 700-mS/mm gm and 112-GHz fT. IEEE Electron Device Lett. 31(10), 1116–1118 (2010)
Gunnarsson, S.E., Kärnfelt, C., Zirath, H., Kozhuharov, R., Kuylenstierna, D., Fager, C., Alping, A.: Single-chip 60 GHz transmitter and receiver MMICs in a GaAs mHEMT technology. In: IEEE MTT-S International Microwave Symposium Digest, vol. 40, no. 11, pp. 801–804 (2006)
Curtis, J., Pham, A.-V., Chirala, M., Aryanfar, F., Pi, Z.: A Ka-Band doherty power amplifier with 25.1 dBm output power, 38% peak PAE and 27% back-off PAE. In: IEEE Radio Frequency Integrated Circuits Symposium (RFIC), pp. 349–352 (2013)
Alizadeh, A., Frounchi, M., Medi, A.: On design of wideband compact-size Ka/Q-band high-power amplifier. IEEE Trans. Microw. Theory Tech. 64(6), 1831–1842 (2016)
Chen, Y.C., Ingram, D.L., Lai, R., Barsky, M., Grunbacher, R., Block, T., Yen, H.C., Streit, D.C.: A 95-GHz InP HEMT MMIC amplifier with 427-mW power output. IEEE Microw. Guid. Wave Lett. 8(11), 399–401 (1998)
Haydl, W.H., Verweyen, L., Jakobus, T., Neumann, M., Tessmann, A., Krems, T., Schlechtweg, M., Reinert, W., Massier, H., Rudiger, J., Bronner,W., Hulsmann, A., Fink, T.: Compact monolithic coplanar 94 GHz front ends. In: IEEE MTT-S International Microwave Symposium Digest, vol. 3, pp. 1281–1284 (1997)
Chirala, M.K., Nguyen, C.: Multilayer design techniques for extremely miniaturized CMOS microwave and millimeter-wave distributed passive circuits. IEEE Trans. Microw. Theory Tech. 54(12), 4218–4224 (2006)
Long, J.R., Zhao, Y., Wu, W., Spirito, M., Vera, L., Gordon, E.: Passive circuit technologies for mm-wave wireless systems on silicon. In: IEEE Trans. Circuits Syst. I Regul. Pap., 59(8), 1680–1693 (2012)
Shi, J., Kang, K., Xiong, Y.Z., Brinkhoff, J., Lin, F., Yuan, X.J.: Millimeter-wave passives in 45-nm digital CMOS. IEEE Electron Device Lett. 31(10), 1080–1082 (2010)
Pozar, D.M.: Microwave Engineering, 4th edn. Wiley, Inc., Hoboken (2012)
Yue, C.P., Wong, S.S.: On-chip spiral inductors with patterned ground shields for Si-based RF IC’s. IEEE J. Solid-State Circuits 33(5), 743–752 (1998)
Lim, K., Pinel, S., Davis, M., Sutono, A., Lee, C.H., Heo, D., Obatoyinbo, A., Laskar, J., Tantzeris, E.M., Tummala, R.: RF-System-On-Package (SOP) for wireless communications. IEEE Microw. Mag. 3(1), 88–99 (2002)
Kondratyev, V., Lahti, M., Jaakola, T.: On the design of LTCC filter for millimeter-waves. In: IEEE MTT-S International Microwave Symposium Digest, vol. 3, pp. 1771–1774 (2003)
Rong, Y., Zaki, K.A., Hageman, M., Stevens, D., Gipprich, J.: Low-temperature cofired ceramic (LTCC) ridge waveguide bandpass chip filters. IEEE Trans. Microw. Theory Tech. 47(12), 2317–2324 (1999)
Lee, J.H., DeJean, G., Sarkar, S., Pinel, S., Lim, K., Papapolymerou, J., Laskar, J., Tentzeris, M.M.: Highly integrated millimeter-wave passive components using 3-D LTCC System-on-Package (SOP) technology. In: IEEE Trans. Microw. Theory Tech., 53(6)II, 2220–2229 (2005)
Sankaran, S., K.K.O.: Schottky barrier diodes for millimeter wave detection in a foundry CMOS process. IEEE Electron Device Lett., 26(7), 492–494 (2005)
Orner, B.A., Liu, Q., Johnson, J., Rassell, R., Liu, X., Joseph, A., Gaucher, B., Sheridan, D.: p-i-n diodes for monolithic millimeter wave BiCMOS Applications. In: International SiGe Technology and Device Meeting, pp. 1–2 (2006)
Motoyoshi, M.: Through-Silicon via (TSV). Proc. IEEE 97(1), 43–48 (2009)
Katti, G., Stucchi, M., De Meyer, K., Dehaene, W.: Electrical modeling and characterization of through silicon via for three-dimensional ICs. IEEE Trans. Electron Devices 57(1), 256–262 (2010)
Bleiker, S.J., Fischer, A.C., Shah, U., Somjit, N., Haraldsson, T., Roxhed, N., Oberhammer, J., Stemme, G., Niklaus, F.: High-aspect-ratio through silicon vias for high-frequency application fabricated by magnetic assembly of gold-coated nickel wires. IEEE Trans. Compon. Packag. Manuf. Technol., 5(1), 21–27 (2015)
Hu, S., Wang, L., Xiong, Y.Z., Lim, T.G., Zhang, B., Shi, J., Yuan, X.: TSV technology for millimeter-wave and terahertz design and applications. IEEE Trans. Compon. Packag. Manuf. Technol., 1(2), 260–267 (2011)
Hu, S., Wang, L., Xiong, Y.Z., Shi, J., Zhang, B., Zhao, D., Lim, T.G., Yuan, X.: Millimeter-wave/THz passive components design using through silicon via (TSV) technology. In: Electronic Components and Technology Conference, pp. 520–523 (2010)
Chen, C.C., Tzuang, C.K.C.: Synthetic quasi-TEM meandered transmission lines for compacted microwave integrated circuits. IEEE Trans. Microw. Theory Tech. 52(6), 1637–1647 (2004)
Gianesello, F., Gloria, D., Raynaud, C., Montusclat, S., Boret, S., Cĺement’, C., Tinella, C., Benech, P., Fournier, J.M., Dambrine, G.: State of the art integrated millimeter wave passive components and circuits in advanced thin SOI CMOS technology on high resistivity substrate. In: Proceedings—IEEE International SOI Conference, vol. 2005, pp. 52–53 (2005)
Haydl, W.H.: On the use of vias in conductor-backed coplanar circuits. IEEE Trans. Microw. Theory Tech. 50(6), 1571–1577 (2002)
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du Preez, J., Sinha, S. (2017). Technologies for Millimeter-Wave Power Amplifiers. In: Millimeter-Wave Power Amplifiers. Signals and Communication Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-62166-1_3
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