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Trends in High Speed Interconnects: InP Monolithic Integration

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Optical Switching in Next Generation Data Centers

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Abstract

InP PIC technologies offer unsurpassed optoelectronic performance and are a key enabler for high-performance optical transceivers. InP lasers are the default solution for the communications lasers operating in the 1300–1600 nm wavelength window. As integration technologies continue to mature and information rates scale up, increasingly sophisticated monolithic techniques are deployed for both discrete devices and integrated circuits for longer-reach networking and higher data rates. The possibility to engineer the band gap across the wafer delivers a rich range of functions in an ever-decreasing footprint. Lasers are combined with additional devices such as modulators, multiplexers, detectors and hybrids within the same chip. Wafer scale production offers a proven route to cost-effective, high-volume production. Monolithic integration reduces cost through reduced test time and simplified assembly and packaging. This chapter reviews the techniques, capabilities and future potential for InP-integrated photonics with a particular reference to requirements in the rapidly evolving data interconnect market, driven in particular by data centres, where energy efficiency, bandwidth and volume production are crucial.

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Acknowledgements

Past and present members of the Institute for Photonic Integration, formerly known as the COBRA institute, are thanked for their stimulating contributions in the preparation of this chapter. The authors are also grateful to partners in JePPIX – the Joint European Platform for Photonic Integrated Components and Circuits – for their insights. Research projects which have had a particular input include Paradigm, Phastflex, GetPICs, WIPE, Photronics and Smartlight.

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Authors and Affiliations

  1. Institute for Photonic Integration, (COBRA), Technical University Eindhoven, Flux Building 9.067, 5612 AJ, Eindhoven, The Netherlands

    Kevin Williams

  2. EFFECT Photonics BV, Torenallee 20, 5617 BC, Eindhoven, The Netherlands

    Boudewijn Docter

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  1. Kevin Williams
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  2. Boudewijn Docter
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Correspondence to Kevin Williams .

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  1. Ericsson Research, Pisa, Italy

    Francesco Testa

  2. Department of Physics, Nanoscience Lab, University of Trento, Povo, Trento, Italy

    Lorenzo Pavesi

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Williams, K., Docter, B. (2018). Trends in High Speed Interconnects: InP Monolithic Integration. In: Testa, F., Pavesi, L. (eds) Optical Switching in Next Generation Data Centers. Springer, Cham. https://doi.org/10.1007/978-3-319-61052-8_14

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  • DOI: https://doi.org/10.1007/978-3-319-61052-8_14

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