Fundamental Thermal Characterization of PECs

  • Alhussein AlbarbarEmail author
  • Canras Batunlu


The implementation of an electrothermal, 3D finite element model for a multichip single IGBT power module is presented in this chapter. The model was built with COMSOL finite element package. Based on the thermal profile extracted from finite element (FE) analysis, a compact electrothermal model was implemented in discrete z-domain with MATLAB/Simulink for continuous temperature estimations over each layer based on the heat interactions and coupling effect across IGBT/diode chips.


Insulated gate bipolar transistor COMSOL Finite element model MATLAB and Simulink 


  1. 1.
    V.K. Khanna, Power IGBT modules, in Insulated Gate Bipolar Transistor IGBT Theory and Design (Wiley, New York, 2003), pp. 465–498Google Scholar
  2. 2.
    A. Volke, M. Hornkamp, I.G.B.T. Modules, Technologies Driver and Application (Infineon Technologies, Neubiberg, 2012)Google Scholar
  3. 3.
    V.K. Khanna, The Insulated Gate Bipolar Transistor (IEEE Press, Piscataway, 2003)CrossRefGoogle Scholar
  4. 4.
    Dynex Power Semiconductors, DIM1200ASM45 DATASHEET, 2013.
  5. 5.
    N. Mohan, T.M. Undeland, Power Electronics: Converters, Applications, and Design (Wiley India, Darya Ganj, 2007)Google Scholar
  6. 6.
    K. Ma, A.S. Bahman, S. Beczkowski, F. Blaabjerg, Complete loss and thermal model of power semiconductors including device rating information. IEEE Trans. Power Electron. 30(5), 2556–2569 (2015)CrossRefGoogle Scholar
  7. 7.
    K. Ma, F. Blaabjerg, Reliability-cost models for the power switching devices of wind power converters, in 2012 3rd IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG) (2012), pp. 820–827Google Scholar
  8. 8.
    D. Zhou, F. Blaabjerg, M. Lau, M. Tonnes, Thermal cycling overview of multi-megawatt two-level wind power converter at full grid code operation. IEEJ J. Ind. Appl. 2(4), 173–182 (2013)Google Scholar
  9. 9.
    D. Wigger, H.-G. Eckel, Comparison of chip- and module-measurements with high power IGBTs and RC-IGBTs, in Proceedings of the 2011-14th European Conference on Power Electronics and Applications (EPE 2011) (2011), pp. 1–8Google Scholar
  10. 10.
    A. Blinov, D. Vinnikov, T. Jalakas, Loss calculation methods of half-bridge square-wave inverters. Electron. Electr. Eng. 113(7), 9–14 (2011)Google Scholar
  11. 11.
    G. Orfanoudakis, S.M. Sharkh, M. Yuratich, M. Abusara, Loss comparison of two and three-level inverter topologies, in 5th IET International Conference on Power Electronics, Machines and Drives (PEMD 2010) (2010), pp. 1–6Google Scholar
  12. 12.
    Z. Zhou, M.S. Kanniche, S.G. Butcup, P. Igic, High-speed electro-thermal simulation model of inverter power modules for hybrid vehicles. IET Electr. Power Appl. 5(8), 636–643 (2011)CrossRefGoogle Scholar
  13. 13.
    J.P. Holman, Heat Transfer (McGraw Hill Higher Education, New York, 2010)Google Scholar
  14. 14.
    W. Janna, Engineering Heat Transfer, 3rd edn. (2009)Google Scholar
  15. 15.
    W. Cauer, Die Verwirklichung der Wechselstromwiderstände vorgeschriebener Frequenzabhängigkeit. Electr. Eng. 17(4), pp. 355–388 (1926)Google Scholar
  16. 16.
    R.M. Foster, Academic and theoretical aspects of circuit theory. Proc. IRE 5, 866–871 (1962)MathSciNetCrossRefGoogle Scholar
  17. 17.
    Q. Chen, X. Yang, Z. Wang, L. Zhang, M. Zheng, Thermal design considerations for integrated power electronics modules based on temperature distribution cases study, in IEEE Power Electronics Specialists Conference, 2007. PESC 2007 (2007), pp. 1029–1035Google Scholar
  18. 18.
    W. Kiffe, G. Wachutka, Combination of thermal subsystems modelled by rapid circuit transformation. EDA Publ. Assoc. (2007)Google Scholar
  19. 19.
    D. Schweitzer, H. Pape, L. Chen, Transient measurement of the junction-to-case thermal resistance using structure functions: chances and limits, in Twenty-fourth Annual IEEE Semiconductor Thermal Measurement and Management Symposium, 2008. Semi-Therm 2008 (2008), pp. 191–197Google Scholar
  20. 20.
    M. Musallam, C.M. Johnson, Impact of different control schemes on the life consumption of power electronic modules for variable speed wind turbines, in Proceedings of the 2011-14th European Conference on Power Electronics and Applications (EPE 2011) (2011), pp. 1–9Google Scholar
  21. 21.
    B. Vermeersch, G. De Mey, A fixed-angle heat spreading model for dynamic thermal characterization of rear-cooled substrates, in Twenty Third Annual IEEE Semiconductor Thermal Measurement and Management Symposium, 2007 (SEMI-THERM 2007) (2007), pp. 95–101Google Scholar
  22. 22.
    A. Hensler, C. Herold, J. Lutz, M. Thoben, Thermal Impedance Monitoring During Power Cycling Tests, Presented at the PCIM Europe (Berlin, 2011), pp. 241–246Google Scholar
  23. 23.
    Y. Xu, D.C. Hopkins, Misconception of thermal spreading angle and misapplication to IGBT power modules, in 2014 Twenty-Ninth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) (2014), pp. 545–551Google Scholar
  24. 24.
    F.N. Masana, A closed form solution of junction to substrate thermal resistance in semiconductor chips. IEEE Trans. Compon. Packag. Manuf. Technol. Part A 19(4), 539–545 (1996)Google Scholar
  25. 25.
    D. Schweitzer, The junction-to-case thermal resistance: a boundary condition dependent thermal metric, in 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium, 2010. (SEMI-THERM 2010) (2010), pp. 151–156Google Scholar
  26. 26.
    W. Storr, Insulated gate bipolar transistor or igbt transistor, in Basic Electronics Tutorials. Accessed 17 Jan 2016

Copyright information

© Springer International Publishing AG 2018

Authors and Affiliations

  1. 1.School of EngineeringThe Manchester Metropolitan UniversityManchesterUnited Kingdom

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