Abstract
Presented in this work are the results concerning formation of nanoscale patterns on the surface of a ternary compound. The evolution of surface morphology of (111) Hg1–xCdxTe (х ∼ 0.223) epilayers due to ion irradiation in the energy range 100–140 keV was studied. Modification was performed using the method of normal- (θ = 0°) and oblique-incidence (θ = 45°) ion bombardment. We have shown that in the range of nanoscale, arrays of holes and mounds on (111) Hg1–xCdxTe surface have been fabricated using B+ and Ag+ ion beam irradiation, respectively. In addition, after normal-incidence irradiation with Ag+ ions, a uniform array of nano-islands 5–25 nm in height was obtained, while the topometry investigation after oblique-incidence irradiation with Ag+ ions points to the structures with fractal geometry. Processing of Hg1–xCdxTe films with ions of different radiuses leads to the formation of surface layers which are significantly different in thickness (400 nm and 100 nm for B + and Ag +, respectively), as well as with maximum mechanical stresses that differ by two orders of magnitude (1.4 × 103 Pa and 2.2 × 105 Pa, respectively). The role of ion beam sputtering and deformation fields appearing upon implantation of ternary compound is discussed in the framework of existing models of surface patterning.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Malherbe JB (2003) In: Chakraborty P (ed) Ion beam analysis of surfaces and interfaces of condensed matter systems. Nova Science, New York, p 357
Battle X, Labarta A (2002) Finite-size effects in fine particles: magnetic and transport properties. J Phys D Appl Phys 35:R15; Holdenried M, Micklitz H (2000) Tunneling magnetoresistance in granular films made of well-defined Co clusters embedded in an inert-gas matrix. Eur Phys J 13(2):205–208
Chini TK, Sanyal MK, Bhattacharyya SR (2002) Energy-dependent wavelength of the ion-induced nanoscale ripple. Phys Rev B 66:153404
Gago R, Vázquez L, Cuerno R, Varela M, Ballesteros C, Albella JM (2001) Production of ordered silicon nanocrystals by low-energy ion sputtering. Appl Phys Lett 78(21):3316–3318
Ziberi B, Cornejo M, Frost F, Rauschenbach B (2009) Highly ordered nanopatterns on Ge and Si surfaces by ion beam sputtering. J Phys Condens Matter 21:224003
Wei Q, Zhou X, Joshi B, Chen Y, Li K-D, Wei Q, Sun K, Wang L (2009) Self-assembly of ordered semiconductor nanoholes by ion beam sputtering. Adv Mater 21:2865–2869
Facsko S, Dekorsy T, Koerdt C, Trappe C, Kurz H, Vogt A, Hartnagel HL (1999) Formation of ordered nanoscale semiconductor dots by ion sputtering. Science 285:p1551–p1553
Plantevin O, Gago R, Vázquez L, Biermanns A, Metzger TH (2007) In situ X-ray scattering study of self-organized nanodot pattern formation on GaSb (001) by ion beam sputtering. Appl Phys Lett 91:113105
Frost F, Schindler A, Bigl F (2000) Roughness evolution of ion sputtered rotating InP surfaces: pattern formation and scaling laws. Phys Rev Lett 85:4116
Jiaming Z, Qiangmin W, Ewing RC, Jie L, Weilin J, Weber WJ (2008) Self-assembly of well-aligned 3C-SiC ripples by focused ion beam. Appl Phys Lett 92(19):3107
Motta FC, Shipman PD, Bradley RM (2012) Highly ordered nano-scale surface ripples produced by ion bombardment of binary compounds. J Phys D Appl Phys 45(12):122001–1224pp
Bradley RM, Harper JME (1988) Theory of ripple topography induced by ion bombardment. J Vac Sci Technol A 6(4):2390–2395
Moreno-Barrado A, Castro M, Gago R, Vázquez L, Muñoz-García J, Redondo-Cubero A, Cuerno R (2015) Nonuniversality due to inhomogeneous stress in semiconductor surface nanopatterning by low-energy ion-beam irradiation. Phys Rev B 91(15):155303
Norris SA (2012) Stress-induced patterns in ion-irradiated silicon: model based on anisotropic plastic flow. Phys Rev B 86(23):235405
Kryshtab T, Savkina RK, Smirnov AB, Kladkevich MD, Samoylov VB (2016) Multi-band radiation detector based on HgCdTe heterostructure. Phys Stat Solidi (c) 13(7–9):639–642
Holander-Gleixner S, Williams BL, Robinson HG, CRJ H (1997) Modeling of junction formation and drive-in in ion implanted HgCdTe. J Electron Mater 26(6):629–634
Mollard L, Destefanis G, Baier N, Rothman J, Ballet P, Zanatta JP, Pautet C (2009) Planar p-on-n HgCdTe FPAs by arsenic ion implantation. J Electron Mater 38(8):1805–1813
Ebe H, Tanaka M, Miyamoto Y (1999) Dependency of pn junction depth on ion species implanted in HgCdTe. J Electron Mater 28(6):854–857
Nemirovsky Y, Bahir G (1989) Passivation of mercury cadmium telluride surfaces. J Vac Sci Technol A 7(2):450–459
Williams BL, Robinson HG, Helms CR, Zhu N (1997) X-ray rocking curve analysis of ion implanted mercury cadmium telluride. J Electron Mater 26:600–605
Novoselova AV, Lazarev VB (eds) (1979) Physicochemical properties of semiconductors. Handbook [in Russian]. Nauka, Moscow
Stahle CM, Helms CR (1992) Ion sputter effects on HgTe, CdTe, and HgCdTe. J Vac Sci Technol A 10:3239–3245
Barabasi A-L, Stanley HE (1995) Fractal concepts in surface growth. Cambridge University Press, Cambridge
Klyui NI, Lozinskii VB, Luk’yanov AN, Morozhenko VA, Savkina RK, Sizov FF, Smirnov AB, Deriglazov VA (2012) Ion-plasma treatment of Cd1− x Zn x Te (x∼ 0.04) single crystals and application of antireflection diamond-like carbon films. Tech Phys 57(8):1121–1126
Smirnov AB, Litvin OS, Morozhenko VO, Savkina RK, Smoliy MI, Udovytska RS, Sizov FF (2013) Role of mechanical stresses at ion implantation of CdHgTe solid solution. Ukr J Phys 58(9):872–880
Sizov FF, Savkina RK, Smirnov AB, Udovytska RS, Kladko VP, Gudimenko AI, Safruk NV, Lytvyn O (2014) Structuring effect of heteroepitaxial CdHgTe/CdZnTe systems under irradiation with silver ions. Phys Solid State 56(11):2160–2165
Sizov FF Savkina RK Smirnov AB Udovytska RS (2016) Patent of Ukraine UA 112999 С2. Buleten Promyslova vlasnist’ (3) (in Ukrainian)
Kumar T, Khan SA, Singh UB, Verma S, Kanjilal D (2012) Formation of nanodots on GaAs by 50keV Ar+ ion irradiation. Appl Surf Sci 258(9):4148–4151
Carter G (2001) The physics and applications of ion beam erosion. J Phys D Appl Phys 34(3):R1
Cerutti A, Ghezzi C (1973) X-ray observations of induced dislocations at simple planar structures in silicon. Phys Stat Solidi (a) 17:273–245
Acknowledgment
The authors gratefully acknowledge Dr. O. Lytvyn, Dr. A. Korchevyi, and Dr. A. Gudymenko for helpful cooperation in the surface characterizations.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2017 Springer International Publishing AG
About this paper
Cite this paper
Smirnov, A.B., Savkina, R.K. (2017). Nanostructuring Surfaces of HgCdTe by Ion Bombardment. In: Fesenko, O., Yatsenko, L. (eds) Nanophysics, Nanomaterials, Interface Studies, and Applications . NANO 2016. Springer Proceedings in Physics, vol 195. Springer, Cham. https://doi.org/10.1007/978-3-319-56422-7_30
Download citation
DOI: https://doi.org/10.1007/978-3-319-56422-7_30
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-56244-5
Online ISBN: 978-3-319-56422-7
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)