Abstract
This chapter presents the growth process of p-type single crystalline 3C-SiC, the optical characterization and the electrical properties of 3C-SiC films. The fabrication of SiC resistors used for investigating the piezoresistance in p-type 3C-SiC is also described.
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L. Wang, S. Dimitrijev, J. Han, A. Iacopi, L. Hold, P. Tanner, H.B. Harrison, Growth of 3C-SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000\(^\circ \)C. Thin Solid Films 519, 6443–6446 (2011)
L. Wang, S. Dimitrijev, J. Han et al., Demonstration of p-type 3C-SiC grown on 150 mm Si(100) substrates by atomic- layer epitaxy at \(1000\,^{\circ }{\rm C}\). J. Crystal Growth 329, 67–70 (2011)
L. Wang, S. Dimitrijev, G. Walker et al., Color chart for SiC thin films grown on Si substrate. Mater. Sci. Forum 740–742, 279–282 (2013)
H.-P. Phan, P. Tanner, D.V. Dao, N.-T. Nguyen, L. Wang, Y. Zhu, S. Dimitrijev, Piezoresistive effect of p-type single crystalline 3C-SiC. IEEE Electron Devices Lett. 35(3), 399–401 (2014)
R.J. Iwanowski, K. Fronc, W. Paszkowicz, M. Heinonen, XPS and XRD study of crystalline 3C-SiC grown by sublimation method. J. Alloys Compd. 286(1), 143–147 (1999)
F. Smith (ed.), Industrial Applications of X-Ray Diffraction (CRC Press, Boca Raton, 1999)
H.-P. Phan, D.V. Dao, P. Tanner, N.-T. Nguyen, L. Wang, Y. Zhu, S. Dimitrijev, Fundamental piezoresistive coefficient of p-type single crystalline 3C-SiC. Appl. Phys. Lett. 104, 111905 (2014)
M. Portail, M. Zielinski, T. Chassagne, S. Roy, M. Nemoz, Comparative study of the role of the nucleation stage on the final crystalline quality of (111) and (100) silicon carbide films deposited on silicon substrates. J. Appl. Phys. 105, 083505 (2009)
H.-P. Phan, D.V. Dao, P. Tanner, J. Han, N.-T. Nguyen, S. Dimitrijev, G. Walker, L. Wang, Y. Zhu, Thickness dependence of the piezoresistive effect in p-type single crystalline 3C-SiC film. J. Mater. Chem. C 2, 7176–7179 (2014)
H.-P. Phan, T. Kozeki, T. Dinh, T. Fujii, A. Qamar, Y. Zhu, T. Namazu, N.-T. Nguyen, D.V. Dao, Piezoresistive effect of p-type silicon nanowires fabricated by a top-down process using FIB implantation and wet etching. RSC Adv. 5, 82121–82126 (2015)
P. Tanner, L. Wang, S. Dimitrijev, J. Han, A. Iacopi, L. Hold, G. Walker, Novel electrical characterization of thin 3C-SiC films on Si substrates. Sci. Adv. Mater. 6(7), 1542–1547 (2014)
A.R. Kermany, G. Brawley, N. Mishra, E. Sheridan, W.P. Bowen, F. Iacopi, Microresonators with Q-factors over a million from highly stressed epitaxial silicon carbide on silicon. Appl. Phys. Lett. 104(8), 081901 (2014)
T. Fujii, T. Namazu, K. Sudoh, S. Sakakihara, S. Inoue, Focused ion beam induced surface damage effect on the mechanical properties of silicon nanowires. J. Eng. Mater. Technol. 135(4), 041002 (2013)
P. Tanner, S. Dimitrijev, H.B. Harrison, Current mechanisms in n-SiC/p-Si heterojunctions, in IEEE Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD (2008), pp. 41–43
A. Qamar, P. Tanner, D.V. Dao, H.P. Phan, T. Dinh, Electrical properties of p-type 3C-SiC/Si heterojunction diode under mechanical stress. IEEE Electron Device Lett. 35(12), 1293–1295 (2015)
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Phan, HP. (2017). 3C-SiC Film Growth and Sample Preparation. In: Piezoresistive Effect of p-Type Single Crystalline 3C-SiC. Springer Theses. Springer, Cham. https://doi.org/10.1007/978-3-319-55544-7_3
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DOI: https://doi.org/10.1007/978-3-319-55544-7_3
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