Abstract
This chapter qualitatively explains the piezoresistive effect in p-type 3C-SiC based on the hole transfer mechanism and the conduction effective mass change due to the deformation of energy band under strain. To explain this phenomenon, the ideas of energy band structure and band deformation of 3C-SiC are discussed. Furthermore, the description of piezoresistive coefficients are also presented in the rest of this chapter.
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References
D. Olego, M. Cardona, P. Vogl, Pressure dependence of the optical phonons and transverse effective charge in 3 C-SiC. Phys. Rev. B 25(6), 3878 (1982)
M. Wijesundara, R. Azevedo, Silicon Carbide Microsystems for Harsh Environments (Springer Science & Business Media, Berlin, 2011)
G.L. Harris, Properties of Silicon Carbide, vol. 13 (IET, London, 1995)
S.M. Sze, K.K. Ng, Physics of Semiconductor Devices (Wiley, New York, 2006)
J.M. Ziman, Principle of the Theory of Solids (Cambridge University Press, London, 1964)
L.A. Hemstreet Jr., C.Y. Fong, Electronic band structure and optical properties of 3C-SiC, BP, and BN. Phys. Rev. B 6(4), 1464 (1972)
W.P. Eaton, J.H. Smith, Micromachined pressure sensors: review and recent developments. Smar. Mater. Struct. 6, 530–539 (1997)
J.C. Wolfe, Summary of the Kronig–Penney electron. Am. J. Phys. 46, 1012 (1978)
A.C.H. Rowe, Piezoresistance in silicon and its nanostructures. J. Mater. Res. 29(6), 731–744 (2014)
D.L. Pulfrey, Understanding Modern Transistors and Diodes (Cambridge University Press, London, 2010)
G.L. Bir, G.E. Pikus, in Symmetry and Strain-Induced Effects in Semiconductors, vol. 624, ed. by D. Louvish (Wiley, New York, 1974)
T. Toriyama, S. Sugiyama, Analysis of piezoresistance in p-type silicon for mechanical sensors. J. Microelectromech. Syst. 11(5), 598 (2002)
P. Kleimann, B. Semmache, M. Le Berre, D. Barbier, Stress-dependent hole effective masses and piezoresistive properties of p-type monocrystalline and polycrystalline silicon. Phys. Rev. B 57(15), 8966–8971 (1998)
Y. Sun, S.E. Thompson, T. Nishida, Strain Effect in Semiconductor: Theory and Device Applications, 1st edn. (Springer, Berlin, 2009)
H.-P. Phan, D.V. Dao, K. Nakamura, S. Dimitrijev, N.-T. Nguyen, The piezoresistive effect of SiC for MEMS sensors at high temperatures: a review. J. Microelectromech. Syst. 24(6), 1663–1677 (2015)
C. Kong, W. Wang, K. Liao, Y. Ma, S. Wang, L. Fang, The theoretical studies of piezoresistive effect in diamond films. Sci. China Ser. A Math. 45(1), 107–114 (2002)
L. Fang, W.L. Wang, P.D. Ding, K.J. Liao, J. Wang, Study on the piezoresistive effect of crystalline and polycrystalline diamond under uniaxial strains. J. Appl. Phys. 86, 5185 (1999)
W. Lu, K. Zhang, X. Xe, Strain effects on the band structures of \(\beta \)-SiC. Phys. Condens. Matter 5, 883–890 (1993)
R. Rahimi, C.M. Miller, S. Raghavan, C.D. Stinespring, D. Korakakis, Electrical properties of strained nano-thin 3C-SiC/Si heterostructures. J. Phys. D Appl. Phys. 42, 055108 (2009)
A.A. Barlian, W.T. Park, J.R. Mallon Jr., A.J. Rastergar, B.L. Pruit, Review: semiconductor the piezoresistive effect for microsystems. Proc. IEEE 97(3), 513–552 (2009)
Y. Kanda, The piezoresistive effect of silicon. Sens. Actuators A 28, 83–91 (1991)
Y. Kanda, A graphical representation of the piezoresistance coefficients in silicon. IEEE Trans. Electron Devices 29(1), 64–70 (1982)
J.C. Doll, B.L. Pruitt, Piezoresistor Design and Applications (Springer, Berlin, 2013). ISBN 978-1-4614-8516-2
Y. Kanda, K. Yamamura, Four terminal gauge quasi circular and square diaphragm silicon pressure sensors. Sens. Actuators 19, 247–257 (1989)
A. Mian, J.C. Suhling, R.C. Jaeger, The van der Pauw Stress Sensor. IEEE Sens. J. 6(2), (2006)
D.V. Dao, T. Toriyama, J. Wells, S. Sugiyama, Silicon piezoresistive six-degree of freedom micro force-moment sensor. Sens. Mater. 15, 113–135 (2002)
M.H. Bao, Micro Mechanical Transducers: Pressure Sensors, Accelerometers and Gyroscopes, vol. 8 (Elsevier, Amsterdam, 2000)
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Phan, HP. (2017). Theory of the Piezoresistive Effect in p-Type 3C-SiC. In: Piezoresistive Effect of p-Type Single Crystalline 3C-SiC. Springer Theses. Springer, Cham. https://doi.org/10.1007/978-3-319-55544-7_2
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DOI: https://doi.org/10.1007/978-3-319-55544-7_2
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