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SONOS 1Tr eFlash Memory

  • Hidenori MitaniEmail author
  • Ken Matsubara
Chapter
Part of the Integrated Circuits and Systems book series (ICIR)

Abstract

In this chapter, a brief history of SONOS flash technology is introduced followed by the details of one-transistor SONOS (1Tr-SONOS) technology. Memory-cell structure, basic cell-operation principles and fabrication process are described. Then basic array architecture and read/program/erase operations are explained with corresponding peripheral circuits. A disturb mode in program and erase operations is also discussed. Finally, advanced circuit techniques to expand application range, especially for automotive use with high reliability and low energy consumption are described.

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Copyright information

© Springer International Publishing AG 2018

Authors and Affiliations

  1. 1.Core Technology Business DivisionRenesas ElectronicsKodaira-shiJapan

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