Abstract
In order to optimize the optoelectronic properties of novel solar cell architectures, such as the amorphous-crystalline interface in silicon heterojunction devices, we calculate and analyze the local microscopic structure at this interface and in bulk a-Si:H, in particular with respect to the impact of material inhomogeneities. The microscopic information is used to extract macroscopic material properties, and to identify localized defect states, which govern the recombination properties encoded in quantities such as capture cross sections used in the Shockley-Read-Hall theory. To this end, atomic configurations for a-Si:H and a-Si:H/c-Si interfaces are generated using molecular dynamics. Density functional theory calculations are then applied to these configurations in order to obtain the electronic wave functions. These are analyzed and characterized with respect to their localization and their contribution to the (local) density of states. GW calculations are performed for the a-Si:H configuration in order to obtain a quasi-particle corrected absorption spectrum. The results suggest that the quasi-particle corrections can be approximated through a scissors shift of the Kohn-Sham energies.
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References
Aeberhard, U., Czaja, P., Ermes, M., Pieters, B., Chistiakova, G., Bittkau, K., Richter, A., Ding, K., Giusepponi, S., Celino, M.: Towards a multi-scale approach to the simulation of silicon hetero-junction solar cells. J. Green Eng. 5(4), 11–32 (2016)
Andersen, H.C.: Molecular dynamics simulations at constant pressure and/or temperature. J. Chem. Phys. 72(4), 2384–2393 (1980)
Becke, A.D., Edgecombe, K.E.: A simple measure of electron localization in atomic and molecular systems. J. Chem. Phys. 92(9), 5397–5403 (1990)
CP2K. http://www.cp2k.org/
Deslippe, J., Samsonidze, G., Strubbe, D.A., Jain, M., Cohen, M.L., Louie, S.G.: BerkeleyGW: a massively parallel computer package for the calculation of the quasiparticle and optical properties of materials and nanostructures. Comput. Phys. Commun. 183(6), 1269–1289 (2012)
Ehrenreich, H.: The Optical Properties of Solids. Academic, New York (1965)
Favre, M., Curtins, H., Shah, A.: Study of surface/interface and bulk defect density in a-Si: H by means of photothermal de ection spectroscopy and photoconductivity. J. Non-Cryst. Solids 97, 731–734 (1987)
George, B.M., Behrends, J., Schnegg, A., Schulze, T.F., Fehr, M., Korte, L., Rech, B., Lips, K., Rohrmüller, M., Rauls, E., Schmidt, W.G., Gerstmann, U.: Atomic structure of interface states in silicon heterojunction solar cells. Phys. Rev. Lett. 110, 136803 (2013)
Giannozzi, P., Baroni, S., Bonini, N., Calandra, M., Car, R., Cavazzoni, C., Ceresoli, D., Chiarotti, G.L., Cococcioni, M., Dabo, I., Corso, A.D., de Gironcoli, S., Fabris, S., Fratesi, G., Gebauer, R., Gerstmann, U., Gougoussis, C., Kokalj, A., Lazzeri, M., Martin-Samos, L., Marzari, N., Mauri, F., Mazzarello, R., Paolini, S., Pasquarello, A., Paulatto, L., Sbraccia, C., Scandolo, S., Sclauzero, G., Seitsonen, A.P., Smogunov, A., Umari, P., Wentzcovitch, R.M.: QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials. J. Phys.: Condens. Matter 21(39), 395502 (2009)
Godby, R.W., Schlüter, M., Sham, L.J.: Self-energy operators and exchange-correlation potentials in semiconductors. Phys. Rev. B 37, 10159–10175 (1988)
Goedecker, S., Teter, M., Hutter, J.: Separable dual-space Gaussian pseudopotentials. Phys. Rev. B 54, 1703–1710 (1996)
Hartwigsen, C., Goedecker, S., Hutter, J.: Relativistic separable dual-space Gaussian pseudopotentials from H to Rn. Phys. Rev. B 58, 3641–3662 (1998)
Hedin, L.: New method for calculating the one-particle Green’s function with application to the electron-gas problem. Phys. Rev. 139, A796–A823 (1965)
Hohenberg, P., Kohn, W.: Inhomogeneous electron gas. Phys. Rev. 136, B864–B871 (1964)
Hybertsen, M.S., Louie, S.G.: Electron correlation in semiconductors and insulators: Band gaps and quasiparticle energies. Phys. Rev. B 34, 5390–5413 (1986)
Hybertsen, M.S., Louie, S.G.: First-principles theory of quasiparticles: calculation of Band gaps in semiconductors and insulators. Phys. Rev. Lett. 55, 1418–1421 (1985)
Jarolimek, K., de Groot, R.A., de Wijs, G.A., Zeman, M.: First-principles study of hydrogenated amorphous silicon. Phys. Rev. B 79, 155206 (2009)
Johlin, E., Wagner, L.K., Buonassisi, T., Grossman, J.C.: Origins of structural hole traps in hydrogenated amorphous silicon. Phys. Rev. Lett. 110, 146805 (2013)
Jülich Supercomputing Centre: JURECA: general-purpose supercomputer at Jülich supercomputing centre. J. Large-Scale Res. Facil. 2, A62 (2016)
Kaneka Corporation. http://www.kaneka.co.jp/kaneka-e/images/topics/1473811995/1473811995_101.pdf
Khomyakov, P.A., Andreoni, W., Afify, N.D., Curioni, A.: Large-scale simulations of \(\alpha \)-Si: H: the origin of midgap states revisited. Phys. Rev. Lett. 107, 255502 (2011)
Kohn, W., Sham, L.J.: Self-consistent equations including exchange and correlation effects. Phys. Rev. 140, A1133–A1138 (1965)
Krack, M.: Pseudopotentials for H to Kr optimized for gradient-corrected exchange-correlation functionals. Theoret. Chem. Acc. 114(1), 145–152 (2005)
Larson, P., Dvorak, M., Wu, Z.: Role of the plasmon-pole model in the GW approximation. Phys. Rev. B 88, 125205 (2013)
Lundqvist, B.I.: Single-particle spectrum of the degenerate electron gas. Physik der Kondensierten Materie 6(3), 193–205 (1967)
Nolan, M., Legesse, M., Fagas, G.: Surface orientation effects in crystalline-amorphous silicon interfaces. Phys. Chem. Chem. Phys. 14, 15173 (2012)
Overhauser, A.W.: Simplified theory of electron correlations in metals. Phys. Rev. B 3, 1888–1898 (1971)
Perdew, J.P.: Density functional theory and the band gap problem. Int. J. Quantum Chem. 28(S19), 497–523 (1985)
Perdew, J.P., Burke, K., Ernzerhof, M.: Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865–3868 (1996)
Ponti, G., Palombi, F., Abate, D., Ambrosino, F., Aprea, G., Bastianelli, T., Beone, F., Bertini, R., Bracco, G., Caporicci, M., Calosso, B., Chinnici, M., Colavincenzo, A., Cucurullo, A., Dangelo, P., Rosa, M.D., Michele, P.D., Funel, A., Furini, G., Giammattei, D., Giusepponi, S., Guadagni, R., Guarnieri, G., Italiano, A., Magagnino, S., Mariano, A., Mencuccini, G., Mercuri, C., Migliori, S., Ornelli, P., Pecoraro, S., Perozziello, A., Pierattini, S., Podda, S., Poggi, F., Quintiliani, A., Rocchi, A., Sció, C., Simoni, F., Vita, A.: The role of medium size facilities in the HPC ecosystem: the case of the new CRESCO4 cluster integrated in the ENEAGRID infrastructure. In: 2014 International Conference on High Performance Computing Simulation (HPCS), pp. 1030–1033 (2014)
QuantumESPRESSO. http://www.quantum-espresso.org
Savin, A., Jepsen, O., Flad, J., Andersen, O.K., Preuss, H., von Schnering, H.G.: Electron localization in solid-state structures of the elements: the diamond structure. Angew. Chem. Int. Ed. Engl. 31(2), 187–188 (1992)
Shockley, W., Read, W.T.: Statistics of the recombinations of holes and electrons. Phys. Rev. 87, 835–842 (1952)
VandeVondele, J., Hutter, J.: An efficient orbital transformation method for electronic structure calculations. J. Chem. Phys. 118(10), 4365–4369 (2003)
Acknowledgments
This project has received funding from the European Commission Horizon 2020 research and innovation program under grant agreement No. 676629. The authors gratefully acknowledge the computing time granted on the supercomputer JURECA [19] at Jülich Supercomputing Centre (JSC) and on the supercomputer CRESCO [30] on the ENEA-GRID infrastructure.
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Czaja, P., Celino, M., Giusepponi, S., Gusso, M., Aeberhard, U. (2017). Ab Initio Description of Optoelectronic Properties at Defective Interfaces in Solar Cells. In: Di Napoli, E., Hermanns, MA., Iliev, H., Lintermann, A., Peyser, A. (eds) High-Performance Scientific Computing. JHPCS 2016. Lecture Notes in Computer Science(), vol 10164. Springer, Cham. https://doi.org/10.1007/978-3-319-53862-4_10
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