Abstract
Detailed low-temperature scanning tunneling microscope images of the Si(100)-2×1-H and the Ge(100)-2×1-H surfaces show a remarkable contrast inversion between filled- and empty-state images where the hydrogen dimer rows appear bright for filled-state images and dark for empty-state images. This contrast inversion originates from the change in the dominant surface states and their coupling to the tip apex and the bulk channels as a function of the bias voltage.
Sections 1, 3, and 5: Reprinted with minor editorial changes from Surface Science Letters, 632, Tiong Leh Yap, Hiroyo Kawai, Olga Neucheva, Andrew Thye Shen Wee, Cedric Troadec, Mark Saeys, and Christian Joachim, “Si(100)-2×1-H dimer rows contrast inversion in low-temperature scanning tunneling microscope images,” L13-L17, 2015, with permission from Elsevier.
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Acknowledgements
We acknowledge the Agency of Science, Technology, and Research (A*STAR) for funding provided through the Visiting Investigatorship Programme Atom Technology project 1021100972, and through the AtMol integrated project contract number 270028 from the European Commission. We also acknowledge the A*STAR Computational Resource Centre (A*CRC) for computational resources and support. MK acknowledges financial support received from the Foundation for Polish Science (FNP).
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Kawai, H. et al. (2017). Si(100):H and Ge(100):H Dimer Rows Contrast Inversion in Low-temperature Scanning Tunneling Microscope Images. In: Kolmer, M., Joachim, C. (eds) On-Surface Atomic Wires and Logic Gates . Advances in Atom and Single Molecule Machines. Springer, Cham. https://doi.org/10.1007/978-3-319-51847-3_4
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