Abstract
In this chapter SSDExplorer, a fine-grained SSD simulator, is used to evaluate the possible impact of emerging non-volatile memories, such as Resistive RAM (RRAM), on future SSD architectures. Does it make sense to fully replace NANDs with one of the emerging memories? What’s the benefit? Is it better to develop a hybrid drive, where a RRAM is used as cache? Most of the new memories are still in the development phase, well before a real mass production; as a matter of fact, simulations are the only way to answer the above mentioned questions and figure out where a new non-volatile technology can really help, in terms of both performances and cost saving.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
R. Micheloni, A. Marelli, and K. Eshghi. Inside Solid State Drives (SSDs). Springer, 2012.
L. Zuolo, C. Zambelli, R. Micheloni, D. Bertozzi, and P. Olivo. Analysis of reliability/performance trade-off in solid state drives. In IEEE International Reliability Physics Symposium, pages 4B.3.1–4B.3.5, June 2014.
E.I. Vatajelu, H. Aziza, and C. Zambelli. Nonvolatile memories: Present and future challenges. In International Design Test Symposium (IDT), pages 61–66, Dec. 2014.
C. Zambelli, A. Grossi, D. Walczyk, T. Bertaud, B. Tillack, T. Schroeder, V. Stikanov, P. Olivo, and C. Walczyk. Statistical analysis of resistive switching characteristics in ReRAM test arrays. In IEEE Int. Conf. on Microelectronics Test Structures (ICMTS), pages 27–31, Mar. 2014.
X. Y. Xue, W. X. Jian, J. G. Yang, F. J. Xiao, G. Chen, X. L. Xu, Y. F. Xie, Y. Y. Lin, R. Huang, Q. T. Zhou, and J. G. Wu. A 0.13 \(\mu \)m 8mb logic based cuxsiyo resistive memory with self-adaptive yield enhancement and operation power reduction. In Symposium on VLSI Circuits (VLSIC), pages 42–43, June 2012.
K. Takeuchi. Hybrid solid-state storage system with storage class memory and nand flash memory for big-data application. In IEEE International Symposium on Circuits and Systems (ISCAS), pages 1046–1049, Jun. 2014.
S.H. Jo. Recent progress in rram materials and devices. In SEMICON Korea, 2015.
S. Dubois. Crossbar Resistive RAM (RRAM): The Future Technology for Data Storage. In SNIA Data Storage Innovation Conference, Apr. 2014.
S Bates, M Asnaashari, and L. Zuolo. Modelling a High-Performance NVMe SSD constructed from ReRAM. In Proc. of Flash Memory Summit, Aug. 2015.
L. Zuolo, C. Zambelli, R. Micheloni, M. Indaco, S. Di Carlo, P. Prinetto, D. Bertozzi, and P. Olivo. Ssdexplorer: A virtual platform for performance/reliability-oriented fine-grained design space exploration of solid state drives. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 34(10):1627–1638, 2015.
Open Nand Flash Interface (ONFI). http://www.onfi.org.
Ha Ryong (Harry) Yoon. Toggle-Mode NAND to Fill Growing Need for Higher Performance. In Proc. of Flash Memory Summit, Aug. 2009.
Nvm express 1.1 specification, 2013. http://nvmexpress.org/wp-content/uploads/2013/05/NVM_Express_1_1.pdf.
Intel solid-state drive dc s3700 series – quality of service., 2013. http://www.intel.com/content/www/us/en/solid-state-drives/ssd-dc-s3700-quality-service-tech-brief.html.
Open Nand Flash Interface (ONFI) revision 4.0. www.onfi.org/~/media/onfi/specs/onfi_4_0-gold.pdf?la=en.
Jian Ouyang, Shiding Lin, Song Jiang, Zhenyu Hou, Yong Wang, and Yuanzheng Wang. Sdf: Software-defined flash for web-scale internet storage systems. In Conference on Architectural Support for Programming Languages and Operating Systems, ASPLOS, pages 471–484, 2014.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2017 Springer International Publishing AG
About this chapter
Cite this chapter
Zuolo, L., Zambelli, C., Micheloni, R., Olivo, P. (2017). Simulations of RRAM-Based SSDs. In: Micheloni, R. (eds) Solid-State-Drives (SSDs) Modeling. Springer Series in Advanced Microelectronics, vol 58. Springer, Cham. https://doi.org/10.1007/978-3-319-51735-3_6
Download citation
DOI: https://doi.org/10.1007/978-3-319-51735-3_6
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-51734-6
Online ISBN: 978-3-319-51735-3
eBook Packages: EngineeringEngineering (R0)