Abstract
Owing to their suitable band gaps and high absorption coefficients, Cd-based compounds such as CdTe and CdS are the most promising photovoltaic materials available for low-cost high-efficiency solar cells. Additionally, because of their large atomic number, Cd-based compounds such as CdTe and CdZnTe, have been applied to radiation detectors. For these reasons, preparation techniques for these materials in the polycrystalline films and bulk single crystals demanded by these devices have advanced significantly in recent decades, and practical applications have been realized in optoelectronic devices. This chapter mainly describes the application of these materials in solar cells and radiation detectors and introduces recent progress.
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References
E. Becquerel: Compt. Rend. Acad. Sci. (Paris) 9, 561 (1839)
Y.A. Vodakov, G.A. Lomakina, G.P. Naumov, Y.P. Maslakovets: Sov. Phys. Solid State 2, 1 (1960)
T. Aramoto, S. Kumazawa, H. Higuchi, T. Arita, S. Shibutani, T. Nishio, J. Nakajima, M. Tsuji, A. Hanafusa, T. Hibino, K. Omura, H. Ohyama, M. Murozono: Jpn. J. Appl. Phys. 36, 6304 (1997)
B. Yang, Y. Ishikikawa, T. Miki, Y. Doumae, M. Isshiki: J. Cryst. Growth 179, 410 (1997)
A.W. Brinkman: Properties of narrow gap cadmium-based compounds. In: Electronic Materials Information Services, Vol. 10, ed. by P. Capper (IEE, London 1994) p. 591
R.W. Swank: Phys. Rev. 156, 844 (1967)
R.G. Little, M.J. Nowlan: Progr. Photovolt. 5, 309 (1997)
Y.-S. Tyan, E.A. Perez-Albuerne:Proc. 16th IEEE Photovolt. Specialists Conf. (IEEE, New York 1982) p. 794
J.M. Woodcock, A.K. Turner, M.E. Özsan, J.G. Summers:Proc. 22nd IEEE Photovolt. Specialists Conf., Las Vegas (IEEE, New York 1991) p. 842
K. Kuribayashi, H. Matsumoto, H. Uda, Y. Komatsu, A. Nakano, S. Ikegami: Jpn. J. Appl. Phys. 22, 1828 (1993)
J. Britt, C. Ferekides: Appl. Phys. Lett. 62, 2851 (1993)
H.W. Schock, A. Shah:Proc. 14th Eur. Photovolt. Sol. Energy Conf., ed. by H.A. Ossenbrink, P. Helm, H. Ehmann (H.S. Stephens, Bedford 1997) p. 2000
A.D. Compaan, A. Gupta, J. Drayton, S.-H. Lee, S. Wang: Phys. Stat. Solid B 241, 779 (2004)
D.A. Cusano: Solid State Electron. 6, 217 (1963)
R.W. Dutton, R.S. Muller: Solid State Electron. 11, 749 (1968)
K.W. Mitchell, A.L. Fahrenbruch, R.W. Bube: J. Appl. Phys. 48, 4365 (1977)
H. Uda, A. Nakano, K. Kuribayashi, Y. Komatsu, H. Matsumoto, S. Ikegami: Jpn. J. Appl. Phys. 22, 1822 (1983)
N. Nakayama, H. Matsumoto, K. Yamaguchi, S. Ikegami, Y. Hioki: Jpn. J. Appl. Phys. 15, 2281 (1976)
S. Ikegami, T. Yamashita: J. Electron. Mater. 8, 705 (1979)
N. Nakayama, H. Matsumoto, A. Nakano, S. Ikegami, H. Uda, T. Yamashita: Jpn. J. Appl. Phys. 19, 703 (1980)
J. Britt, C. Ferikides: Appl. Phys. Lett. 62, 2851 (1993)
M. Tsuji, T. Aramoto, H. Ohyama, T. Hibino, K. Omura: Jpn. J. Appl. Phys. 39, 3902 (2000)
M.P.R. Panicker, M. Knaster, F.A. Kröger: J. Electrochem. Soc. 125, 566 (1978)
K. Murase, H. Uchida, T. Hirato, Y. Awakura: J. Electrochem. Soc. 146, 531 (1999)
K. Murase, M. Matsui, M. Miyake, T. Hirato, Y. Awakura: J. Electrochem. Soc. 150, 44 (2003)
M. Miyake, K. Murase, H. Inui, T. Hirato, Y. Awakura: J. Electrochem. Soc. 151, 168 (2004)
D.W. Cunningham, M. Rubcich, D. Skinner: Prog. Photovolt. 10, 59 (2002)
B. McCandless, K. Dobson, S. Hegedus, P. Paulson:Proc. NCPV Sol. Program Rev. Meet., Denver (NREL, Golden 2003) p. 401, NREL/CD-520-33586
G. Gidiputti, P. Mahawela, M. Ramalingan, G. Sivaraman, S. Subramanian, C.S. Ferekides, D.L. Morel:Proc. NCPV Sol. Program Rev. Meet., Denver (NREL, Golden 2003) p. 896, NREL/CD-520-33586
P.D. Maycock: PV News 17, 3 (1998)
R.C. Powell, U. Jayamaha, G.L. Dorer, H. McMaster:Proc. NCPV Photovolt. Program, Rev., ed. by M. Al-Jassim, J.P. Thornton, J.M. Gee (American Institute of Physics, New York 1995) p. 1456
D. Bonnet, H. Richter, K.-H. Jager:Proc. 13th Eur. Photovolt. Sol. Energy Conf., ed. by W. Freiesleben, W. Palz, H.A. Ossenbrink, P. Helm (Stephens, Bedford 1996) p. 1456
K. Zweibel, H. Ullal:Proc. 25th IEEE Photovolt. Specialists Conf., Washington DC 1996 (IEEE, New York 1996) p. 745
K.L. Barth, R.A. Enzenroth, W.S. Sampath:Proc. NCPVSol. Program Rev. Meet., Denver (NREL, Golden 2003) p. 904, NREL/CD-520-33586
A. Abken, C. Hambro, P. Meyers, R. Powell, S. Zafar:Proc NCPV Sol. Program Rev. Meet., Denver (NREL, Golden 2003) p. 393, NREL/CD-520-33586
K. Zanio: In: Semiconductors and Semimetals, Vol. 13, ed. by R.K. Willardson, A.C. Beer (Academic, New York 1978) p. 164
R. Triboulet, Y. Marfaing, A. Cornet, P. Siffert: J. Appl. Phys. 45, 2759 (1974)
G. Sato, T. Takahashi, M. Sugiho, M. Kouda, T. Mitani, K. Nakazawa, Y. Okada, S. Watanabe: IEEE Trans. Nucl. Sci. 48, 950 (2001)
C. Szeles: Phys. Stat. Solid B 241, 783 (2004)
H. Yoon, J.M. Van Scyoc, T.S. Gilbert, M.S. Goorsky, B.A. Brunett, J.C. Lund, H. Hermon, M. Schieber, R.B. James:Proc. Infrared Appl. Semicond. II. Symp. Boston, ed. by D.L. McDaniel Jr., M.O. Manasreh, R.H. Miles, S. Sivananthan, P.A. Warrendale (Materials Research Society, Pittsburgh 1998) p. 241
R.O. Bell, G. Entine, H.B. Serreze: Nucl. Instrum. Methods 117, 267 (1974)
P. Siffert, J. Berger, C. Scharager, A. Cornet, R. Stuck, R.O. Bell, H.B. Serreze, F.V. Wald: IEEE Trans. Nucl. Sci. 23, 159 (1976)
R.K. Route, M. Woff, R.S. Feigelson: J. Cryst. Growth 70, 379 (1984)
K.Y. Lay, D. Nichols, S. McDevitt, B.E. Dean, C.J. Johnson: J. Cryst. Growth 86, 118 (1989)
R.O. Bell, N. Hemmat, F. Wald: Phys. Stat. Solid A 1, 375 (1970)
R. Triboulet, Y. Mafaing, A. Cornet, P. Siffert: J. Appl. Phys. 45, 375 (1970)
K. Zanio: J. Electron. Mat. 3, 327 (1974)
M. Azoulay, A. Raizman, G. Gafni, M. Roth: J. Cryst. Growth 101, 256 (1990)
A. Tanaka, Y. Masa, S. Seto, T. Kawasaki: Mater. Res. Soc. Symp. Proc. 90, 111 (1987)
W. Akutagawa, K. Zanio: J. Cryst. Growth 11, 191 (1971)
C. Ceibel, H. Maier, R. Schmitt: J. Cryst. Growth 86, 386 (1988)
M. Isshiki: Wide-Gap II–VI Compounds for Opto-Electronic Applications (Chapman Hall, London 1992) p. 3
R. Triboulet, Y. Mafaing: J. Electrochem. Soc. 120, 1260 (1973)
M. Funaki, T. Ozaki, K. Satoh, R. Ohno: Nucl. Instrum. Methods A 322, 120 (1999)
M. Fiederle, T. Feltgen, J. Meinhardt, M. Rogalla, K.W. Benz: J. Cryst. Growth 197, 635 (1999)
B. Yang, Y. Ishikawa, Y. Doumae, T. Miki, T. Ohyama, M. Isshiki: J. Cryst. Growth 172, 370 (1997)
S.H. Song, J. Wang, M. Isshiki: J. Cryst. Growth 236, 165 (2002)
U. Lachish: CdTe and CdZnTe Crystal Growth and Production of Gamma Radiation Detectors, http://urila.tripod.com/crystal.htm
T. Takahashi, S. Watanabe: IEEE Trans. Nucl. Sci. 48, 950 (2001)
M. Amman, J.S. Lee, P.N. Luke: J. Appl. Phys. 92, 3198 (2002)
K. Nakazawa, K. Oonuki, T. Tanaka, Y. Kobayashi, K. Tamura, T. Mitani, G. Sato, S. Watanabe, T. Takahashi, R. Ohno, A. Kitajima, Y. Kuroda, M. Onishi: IEEE Trans. Nucl. Sci. 51, 1881 (2004)
T. Takahashi, T. Mitani, Y. Kobayashi, M. Kouda, G. Sato, S. Watanabe, K. Nakazawa, Y. Okada, M. Funaki, R. Ohno, K. Mori: IEEE Trans. Nucl. Sci. 49, 1297 (2002)
R. Arlt, D.E. Rundquist: Nucl. Instrum. Methods Phys. Res. A 380, 455 (1996)
T. Prettyman:Proc. 2nd Workshop Sci.Mod. Technol. Safeguards, Albuquerque, ed. by C. Foggi, E. Petraglia (European Commission, Albuquerque 1998)
W.K. Yoon, Y.G. Lee, H.R. Cha, W.W. Na, S.S. Park: INMM J. Nucl. Mat. Manag. 27, 19 (1999)
C. Scheiber, J. Chambron: Nucl. Instrum. Methods A 322, 604 (1992)
H.B. Barber: J. Electron. Mater. 25, 1232 (1996)
L. Verger, J.P. Bonnefoy, F. Glasser, P. Ouvrier-Buffet: J. Electron. Mater. 26, 738 (1997)
S. Yin, T.O. Tümay, D. Maeding, J. Mainprize, G. Mawdsley, M.J. Yaffe, W.J. Hamilton: IEEE Trans. Nucl. Sci. 46, 2093 (1999)
C. Scheiber: Nucl. Instrum. Methods A 448, 513 (2000)
S. Yin, T.O. Tümay, D. Maeding, J. Mainprize, G. Mawdsley, M.J. Yaffe, E.E. Gordon, W.J. Hamilton: IEEE Trans. Nucl. Sci. 49, 176 (2002)
T. Tanaka, T. Kobayashi, T. Mitani, K. Nakazawa, K. Oonuki, G. Sato, T. Takahashi, S. Watanabe: New Astron. Rev. 48, 269 (2004)
T. Takahashi, B. Paul, K. Hirose, C. Matsumoto, R. Ohno, T. Ozaki, K. Mori, Y. Tomita: Nucl. Instr. Meth. A 436, 111 (2000)
T. Takahashi, K. Nakazawa, T. Kamae, H. Tajima, Y. Fukazawa, M. Nomachi, M. Kokubun: SPI 4851, 1228 (2002)
T. Takahashi, K. Makishima, Y. Fukazawa, M. Kokubun, K. Nakazawa, M. Nomachi, H. Tajima, M. Tashiro, Y. Terada: New Astron. Rev. 48, 309 (2004)
V.K. Krishna, V. Dutta: J. Appl. Phys. 96, 3962 (2004)
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Isshiki, M., Wang, J. (2017). II-IV Semiconductors for Optoelectronics: CdS, CdSe, CdTe. In: Kasap, S., Capper, P. (eds) Springer Handbook of Electronic and Photonic Materials. Springer Handbooks. Springer, Cham. https://doi.org/10.1007/978-3-319-48933-9_33
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