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Temperature-Insensitive Band-Gap III-V Semiconductors: Tl-III-V and III-V-Bi

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Springer Handbook of Electronic and Photonic Materials

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Abstract

Thallium-containing III-V (Tl-III-V) and bismuth-containing III-V (III-V-Bi) alloy semiconductors were first proposed as novel functional semiconductors. They are alloys consisting of semiconductors (III-V) and semimetals (Tl-V, III-Bi), and are important materials for the fabrication of temperature-insensitive lasing wavelength laser diodes as well as long wavelength infrared (LWIR) optical devices. However, the growth conditions for alloys containing Tl and Bi are very strict and the growth windows are narrow. In this chapter, the expected properties of these semiconductors and the experimental results for the growth, characterization, and device applications are described.

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Authors and Affiliations

  1. Inst. of Scientific and Industrial Research, Osaka University, Osaka, Japan

    Hajime Asahi

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  1. Hajime Asahi
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Correspondence to Hajime Asahi .

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Editors and Affiliations

  1. University of Saskatchewan, Saskatoon, Canada

    Safa Kasap

  2. Formerly with Leonardo MW Ltd, Southampton, UK

    Peter Capper

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Asahi, H. (2017). Temperature-Insensitive Band-Gap III-V Semiconductors: Tl-III-V and III-V-Bi. In: Kasap, S., Capper, P. (eds) Springer Handbook of Electronic and Photonic Materials. Springer Handbooks. Springer, Cham. https://doi.org/10.1007/978-3-319-48933-9_23

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