Abstract
In this chapter, we discuss another important class of devices, devices containing floating gate including floating-gate transistors and capacitors, that can be produced in logic CMOS processes. We describe some examples of making floating-gate memory cells in a logic process and several methods of programming, including tunneling and hot carrier injection, floating-gate devices. The importance of coupling ratio and its implications to the NVM cell design is discussed extensively. In the last section, we review a semi-floating-gate device, that of gain cell which have found application as an embedded DRAM cell.
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More recently, some 3D flash memories started to use charge trapping transistor, not floating gate, to store charge.
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Ma, Y., Kan, E. (2017). Floating-Gate Devices in Logic CMOS Processes. In: Non-logic Devices in Logic Processes. Springer, Cham. https://doi.org/10.1007/978-3-319-48339-9_5
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DOI: https://doi.org/10.1007/978-3-319-48339-9_5
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Online ISBN: 978-3-319-48339-9
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