Abstract
Lanthanum nickelate (LaNiO3) is a promising material for stable fuel-cell electrode, optoelectronic and magneto-electronic devices. Density functional theory (DFT) based calculations were carried out to investigate the effect of strain on the physical properties of the correlated metal LaNiO3. Electronic structure, optical conductivity and temperature variation of resistivity have been studied in detail using GGA+U approach. It has been observed that LaNiO3 under strain is more metallic compared to the unstrained system. However LaNiO3 under compressive strain is found to be more metallic than that under tensile strain. Electron localization function calculation revealed that LaNiO3 under tensile strain has more covalent bonding than that under compressive strain, which results in an increase in resistivity for the system under tensile strain. The theoretical understanding of the alternation of physical properties of the system, caused by misfit strain may help in the application of the system in different device purposes using strain engineering.
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References
R. Scherwitzl, P. Zubko, C. Lichtensteiger, and J.M. Triscone, “Electric-field tuning of the metal-insulator transition in ultrathin films of LaNiO3,” Appl. Phys. Lett., 95 (2009), 222114–1–222114–3.
J.J. Zhu, W.W. Li, Y.W. Li, Y.D. Shen, Z.G. Hu, and J.H. Chu, “Effects of applied electrical field on electronic structures in LaNiO3 conductive metallic oxide film: An optical spectroscopic study,” Appl. Phys. Lett., 97 (2010), 211904–1–211904–3.
M.K. Stewart, C.H. Yee, J. Liu, M. Kareev, R.K. Smith, B.C. Chapler, M. Varela, P.J. Ryan, K. Haule, J. Chakhalian, and D. N. Basov, “Optical study of strained ultrathin films of strongly correlated LaNiO3,” Phys. Rev. B, 83 (2011), 075125–1–075125–8.
S. J. May, J.W. Kim, J.M. Rondinelli, E. Karapetrova, N.A. Spaldin, A. Bhattacharya, and P.J. Ryan, “Quantifying octahedral rotations in strained perovskite oxide films,” Phys. Rev. B, 82 (2010), 014110–1–014110–7.
N. Gayathri, A.K. Raychaudhuri, X.Q. Xu, J.L. Peng and R.L. Greene, “Electronic conduction in LaNiO3-δ: the dependence on the oxygen stoichiometry δ,” J. Ph ys.:Condens. Matter, 10 (1998), 1323–1338.
G. Kresse, and J. Furthmuller, “Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set,” Phys. Rev. B, 54 (1996), 11169–11186.
G. Gou, I. Grinberg, A.M. Rappe, and J.M. Rondinelli, “Lattice normal modes and electronic properties of the correlated metal LaNiO3,” Phys. Rev. B, 84 (2011), 144101–1–144101–13.
G.K.H. Madsen, D.J. Singh, “BoltzTraP. A code for calculating band-structure dependent quantities,” Computer Physics Communications, 175 (2006), 67–71.
M. Zhu, P. Komissinskiy, A. Radetinac, M. Vafaee, Z. Wang, and L. Alff, “Effect of composition and strain on the electrical properties of LaNiO3 thin films,” Appl. Phys. Lett., 103 (2013),141902–1–141902–5.
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© 2016 TMS (The Minerals, Metals & Materials Society)
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Misra, D., Kundu, T.K., Ankit (2016). Effect of Strain on the Physical Properties of Lanthanum Nickelate. In: TMS 2016 145th Annual Meeting & Exhibition. Springer, Cham. https://doi.org/10.1007/978-3-319-48254-5_31
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DOI: https://doi.org/10.1007/978-3-319-48254-5_31
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-48624-6
Online ISBN: 978-3-319-48254-5
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