Abstract
The simple formulae derived in Sects. 1.4 and 1.5 account for the first-order effects which influence the behaviour of MOS transistors. Until the mid-seventies, formulae (1.18) appeared quite adequate for predicting the performance of MOS circuits. However, these transistor formulae ignore several physical and geometrical effects which significantly degrade the behaviour of MOS transistors. The results are therefore considerably more optimistic than the actual performance observed in MOS circuits. The deviation becomes more significant as MOS transistor sizes decrease in VLSI circuits.
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J.M. Veendrick, H. (2017). Geometrical-, Physical- and Field-Scaling Impact on MOS Transistor Behaviour. In: Nanometer CMOS ICs. Springer, Cham. https://doi.org/10.1007/978-3-319-47597-4_2
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DOI: https://doi.org/10.1007/978-3-319-47597-4_2
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