Abstract
In this chapter we will discuss some important applications of the Monte Carlo method in nanometrology . We will describe, in particular, (1) the line-scan calculations of resist materials with given geometrical cross-sections deposited on silicon substrates; and (2) the energy selective SEM for image contrast in silicon p-n junctions.
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Dapor, M. (2017). Applications. In: Transport of Energetic Electrons in Solids. Springer Tracts in Modern Physics, vol 999. Springer, Cham. https://doi.org/10.1007/978-3-319-47492-2_9
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