Abstract
Space electronic warfare (SEW) implies tactical advantages in electronic attacks, electronic protection and electronic support using satellites in low-earth orbit (LEO) for surveillance, communications or positioning, or denying the enemy these activities.
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Notes
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The RS-485 standard is published by the Telecommunications Industry Association and Electronic Industries Alliance (TIA/EIA) for digital communications networks specifically used over long distances and noisy environments. The International Organization for Standardization (ISO) 11898 standard specifies the physical and datalink layers of serial communication that supports distributed real-time control and multiplexing.
References
Adell, P. C., Yager, J., Pannell, Z., Shelton, J., Mojarradi, M. M., Blalock, B., et al. (2014). Radiation hardening of an SiGe BiCMOS Wilkinson ADC for distributed motor controller application. IEEE Transactions on Nuclear Science, 61(3), 1236–1242.
Cressler, J. D. (2007). SiGe BiCMOS technology: An IC design platform for extreme environment electronics applications. In 45th Annual International Reliability Physics Symposium (pp. 141–149).
Cressler, J. D. (2013). Radiation effects in SiGe technology. IEEE Transactions on Nuclear Science, 60(3), 1992–2014.
Curtis, S. B., & Letaw, J. R. (1989). Galactic cosmic rays and cell-hit frequencies outside the magnetosphere. Advances in Space Research, 9(10), 293–298.
DeBlois, B. M., Garwin, R. L., Kemp, R. S., & Marwell, J. C. (2005). Star-crossed [space-based weapons]. IEEE Spectrum, 42(3), 40–49.
Dodd, P. E., Shaneyfelt, M. R., Schwank, J. R., & Felix, J. A. (2010). Current and future challenges in radiation effects on CMOS electronics. IEEE Transactions on Nuclear Science, 57(4), 1747–1763.
England, T., Chatterjee, C., Lourenco, N., Finn, S., Najafizadeh, L., Phillips, S., et al. (2014). Cold-Capable, radiation-hardened SiGe BiCMOS wireline transceivers. IEEE Aerospace and Electronic Systems Magazine, 29(3), 32–41.
Fossum, J. G., Derbenwick, G. F., & Gegory, B. L. (1975). Design optimization of radiation-hardened CMOS integrated circuits. IEEE Transactions on Nuclear Science, NS-22(6), 2208–2213.
Gaucher, B., Floyd, B., Reynolds, S., Pfeiffer, U., Grzyb, J., Joseph, A., et al. (2007). Silicon germanium based millimeter-wave ICs for Gbps wireless communications in radar systems. Semiconductor Science and Technology, 22(1), S236–S243.
Gussenhoven, M. S., & Mullen, E. G. (1993). Space radiation effects program. An overview. IEEE Transactions on Nuclear Science, 40(2), 221–227.
ICRP. (2007). The 2007 recommendations of the international commission on radiological protection. ICRP Publication, 103, 37, 2–4.
IEEE. (2003). IEEE standard for letter designations for radar-frequency bands. IEEE-SA Standards Board. Approved January 21, 2003.
Jung, S., Lourenco, N. E., Song, I., Oakley, M. A., England, T. D., Arora, R., et al. (2014). An investigation of single-event transients in C-SiGe HBT on SOI current mirror circuits. IEEE Transactions on Nuclear Science, 61(6), 3193–3200.
Kundu, S., Rajesh, G., Vijaykrishan, N., Raina, R., & Pia, S. (2005). Is the concern for soft-error overblown? In 2005 IEEE International Conference on Test (pp. 1–2), 2005
Kuo, W. L., Krithivasan, R., Li, X., Lu, Y., Cressler, J. D., Gustat, H., et al. (2006). A low-power, X-band SiGe HBT low-noise amplifier for near-space radar applications. IEEE Microwave and Wireless Components Letters, 16(9), 520–522.
Label, K. A. (2004, April). NEPP Webex presentation—Radiation effects 101: Simple concepts and new challenges. NASA.
Lu, Y., Cressler, J. D., Krithivasan, R., Li, Y., Reed, R. A., Marshall, P. W., et al. (2003). Proton tolerance of third-generation, 0.12 µm 185 GHz SiGe HBTs. IEEE Transactions on Nuclear Science, 50(6), 1811–1815.
Maiti, C. K., & Armstrong, G. A. (2001). Applications of silicon-germanium heterostructure devices. CRC Press. ISBN 1420034693, 2001.
McLean, F. B., & Oldham, T. R. (1987). Basic mechanisms of radiation effects in electronic materials and devices. Harry Diamond Laboratories Technical Report. HDL-TR, 2129.
Messenger, G. C. (1969). Radiation hardening of electronics systems. Invited paper. IEEE Transactions on Nuclear Science, 16(6), 160–168.
Messenger, G. C., Spratt, J. P. (1958, June). The Effects of Neutron Irradiation on Silicon and Germanium. Proceedings of the IRE, 46(6), 1038–1044.
Ohyama, H., Vanhellemont, J., Takami, Y., Hayama, K., Sunaga, H., Poortmans, J., et al. (1994). Germanium content dependence of radiation damage in strained Si1−xGex epitaxial devices. IEEE Transactions on Nuclear Science, 41(6), 2437–2442.
Oldham, T. R. (1984). Analysis of damage in MOS devices in several radiation environments. IEEE Transactions on Nuclear Science, 31(6), 1236–1241.
Petersen, E. L. (1998). The SEU figure of merit and proton upset rate calculations. IEEE Transactions on Nuclear Science, 45(6), 2550–2562.
Preston, B., Johnson, D. J., Edwards, S. J. A., Miller, M., & Shipbaugh, C. (2002). Space weapons: Earth wars. Published by RAND Corporation. MR-I209-AF, 2002.
Rice, J. S., Ullan, M., Brooijmans, G., Cressler, J. D., Damiani, D., Diez, S., et al. (2008). Performance of the SiGe HBT 8HP and 8WL technologies after high dose/fluence radiation exposure. In 2008 IEEE Nuclear Science Symposium Conference. N30-134, 2206–2210, 2008.
Shah, T., Danziger, S., Moores, K., & Joshi, Y. (1998). Cyanate ester die attach material for radiation hardened electronic packages. Adhesive Joining and Coating Technology in Electronics Manufacturing, 49–54.
Space Foundation. (2016). U.S. defense Space-based and—Related systems fiscal year 2016 budget comparison. Update 2. Retrieved May 3, 2016 from http://www.spacefoundation.org/
Srour, J. R. (1983). Basic mechanisms of radiation effects on electronic materials, devices, and integrated circuits. In 1983 Annual International Nuclear and Space Radiation Effects Conference, Short Course.
Srour, J. R., Marshall, C. J., & Marshall, P. W. (2003). Review of displacement damage effects in silicon devices. IEEE Transactions on Nuclear Physics, 50(3), 653–670.
Srour, J. R., & McGarrity, J. M. (1988). Radiation effects on microelectronics in space. Proceedings of the IEEE, 76(11), 1443–1469.
Teply, F. E., Venkitachalam, D., Sorge, R., Scholz, R. F., Heyer, H., Ullán, M., et al. (2011). Radiation hardness evaluation of a 0.25 µm SiGe BiCMOS technology with LDMOS module. In 12th European Conference on Radiation and Its Effects on Components and Systems (pp. 881–888), 2011.
Texas Instruments. (1994). Application note AN-926. Radiation considerations using CMOS logic. Literature Number SNOA254A.
Thrivikraman, T. K., Cheng, P., Phillips, S. D., Comeau, J. P., Morton, M. A., Cressler, J. D., et al. (2008). On the radiation tolerance of SiGe HBT and CMOS-based phase shifters for space-based, phased-array antenna system. IEEE Transactions on Nuclear Science, 55(6), 3246–3252.
Thrivikraman, T. K., Kuo, W. L., Comeau, J. P., Sutton, A. K., Cressler, J. D., Marshall, P. W., et al. (2007). A 2 mW, Sub-2 dB noise figure, SiGe low-noise amplifier for X-band high-altitude or space-based radar applications. In 2007 IEEE Radio Frequency Integrated Circuits Symposium (pp. 629–632), 2007.
Yuan, J., Cressler, J. D., Krithivasan, R., Thrivikraman, T., Khater, M. H., Ahlgren, D. C., et al. (2009). On the performance limits of cryogenically operated SiGe HBTs and its relation to scaling for terahertz speeds. IEEE Transactions on Electron Devices, 56(5), 1007–1019.
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Lambrechts, W., Sinha, S. (2017). SiGe for Radiation Hardening: Spearheading Electronic Warfare in Space. In: SiGe-based Re-engineering of Electronic Warfare Subsystems. Signals and Communication Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-47403-8_7
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