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High Performance Computing in Science and Engineering ´16 pp 189–202Cite as

Molecular Dynamics Simulations of Silicon: The Influence of Electron-Temperature Dependent Interactions

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Abstract

The well-known two-temperature model for solids with highly excited electrons is extended from metals to semiconductors. It is combined with classical molecular dynamics simulations to study laser ablation in semiconductors where charge carriers are created by the absorption of the laser light. The model is improved by extending the static modified Tersoff potential to a dynamical interaction which depends on the electron temperature of the material. Results are presented for single and double pulses in silicon and are compared to a simple rescale model where the laser energy is added as kinetic energy to the atoms.

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Authors and Affiliations

  1. Institut für Funktionelle Materie und Quantentechnologien, Universität Stuttgart, Stuttgart, Germany

    Alexander Kiselev, Johannes Roth & Hans-Rainer Trebin

Authors
  1. Alexander Kiselev
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  2. Johannes Roth
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  3. Hans-Rainer Trebin
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Corresponding author

Correspondence to Johannes Roth .

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Editors and Affiliations

  1. Zentrum für Informationsdienste und Hochleistungsrechnen (ZIH), Technische Universität Dresden, Dresden, Germany

    Wolfgang E. Nagel

  2. Abteilung für Angewandte Mathematik, Universität Freiburg, Freiburg, Germany

    Dietmar H. Kröner

  3. Höchstleistungsrechenzentrum Stuttgart (HLRS), Universität Stuttgart, Stuttgart, Germany

    Michael M. Resch

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© 2016 Springer International Publishing AG

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Kiselev, A., Roth, J., Trebin, HR. (2016). Molecular Dynamics Simulations of Silicon: The Influence of Electron-Temperature Dependent Interactions. In: Nagel, W.E., Kröner, D.H., Resch, M.M. (eds) High Performance Computing in Science and Engineering ´16. Springer, Cham. https://doi.org/10.1007/978-3-319-47066-5_14

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