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Nanosilica Suspensions for Monocrystalline Silicon Wafers CMP Surface for Micro- and Nanoelectronics

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Recent Global Research and Education: Technological Challenges

Part of the book series: Advances in Intelligent Systems and Computing ((AISC,volume 519))

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Abstract

Method of chemical-mechanical polishing (CMP) approach to production submicron and deep submicron levels. For monocrystalline silicon wafer by CMP, we have developed a suspension, containing solid phase, amorphous, spherical particles of nanosized aerosil. SiO2 particles are homogenously distribute in an alkaline medium. Removing material in CMP is the result of combined effects of chemically less active (etching) environment and mechanical particles of suspension and pad. In the study of the surface of silicon wafers after the final stage of the chemical- mechanical polishing using AFM the presence of surface defects and destruction of the surface layer is not established. Roughness of surface of monocrystalline silicon wafer (Ra) after polishing by silica suspension is 0.2–0.3 nm.

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References

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Authors and Affiliations

  1. Francisk Scorina Gomel State University, Gomel, Belarus

    Yanina Kasianok, Vladimir Gaishun, Olga Tyulenkova & Sergey Khakhomov

Authors
  1. Yanina Kasianok
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  2. Vladimir Gaishun
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  3. Olga Tyulenkova
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  4. Sergey Khakhomov
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Corresponding author

Correspondence to Yanina Kasianok .

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Editors and Affiliations

  1. Institute of Metrology and Biomedical En, Warsaw University of Technology Institute of Metrology and Biomedical En, Warsaw, Poland

    Ryszard Jabłoński

  2. Institute of Metrology and Biomedical En, Warsaw University of Technology Institute of Metrology and Biomedical En, Warsaw, Poland

    Roman Szewczyk

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Kasianok, Y., Gaishun, V., Tyulenkova, O., Khakhomov, S. (2017). Nanosilica Suspensions for Monocrystalline Silicon Wafers CMP Surface for Micro- and Nanoelectronics. In: Jabłoński, R., Szewczyk, R. (eds) Recent Global Research and Education: Technological Challenges. Advances in Intelligent Systems and Computing, vol 519. Springer, Cham. https://doi.org/10.1007/978-3-319-46490-9_19

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  • DOI: https://doi.org/10.1007/978-3-319-46490-9_19

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-46489-3

  • Online ISBN: 978-3-319-46490-9

  • eBook Packages: EngineeringEngineering (R0)

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