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Investigation of the Crystallization Kinetics in the Phase Change Memory Materials of Ge–Sb–Te System

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3rd International Congress on Energy Efficiency and Energy Related Materials (ENEFM2015)

Part of the book series: Springer Proceedings in Energy ((SPE))

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Abstract

In this work mechanism and kinetics of crystallization for thin films on the basis of Ge–Sb–Te–Bi and Ge–Sb–Te–In perspective for phase change memory application were investigated. Possible data processing and storage times of the PCM cell were estimated. It was shown that PCM cell based on Ge2Sb2Te5 + 0.5 wt% Bi have minimum data processing and maximum data storage times in comparison with the other investigated materials.

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References

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Acknowledgments

This study was supported by Ministry of Education and Science of RF (project ID: RFMEFI57514X0096).

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Authors and Affiliations

  1. National Research University of Electronic Technology, Bld. 1, Shokin Square, Zelenograd, Moscow, Russia

    A. Sherchenkov, A. Babich, P. Lazarenko, S. Timoshenkov & A. Shuliatyev

  2. Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky Prospect, Moscow, Russia

    S. Kozyukhin & A. Baranchikov

Authors
  1. A. Sherchenkov
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  2. S. Kozyukhin
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  3. A. Babich
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  4. P. Lazarenko
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  5. S. Timoshenkov
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  6. A. Shuliatyev
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  7. A. Baranchikov
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Corresponding author

Correspondence to A. Sherchenkov .

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Editors and Affiliations

  1. Department of Materials Science and Engineering, Gebze Technical University, Gebze, Kocaeli, Turkey

    Ahmet Yavuz Oral

  2. Department of Environmental Engineering, Gebze Technical University, Gebze, Kocaeli, Turkey

    Zehra Banu Bahsi Oral

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Sherchenkov, A. et al. (2017). Investigation of the Crystallization Kinetics in the Phase Change Memory Materials of Ge–Sb–Te System. In: Oral, A., Bahsi Oral, Z. (eds) 3rd International Congress on Energy Efficiency and Energy Related Materials (ENEFM2015). Springer Proceedings in Energy. Springer, Cham. https://doi.org/10.1007/978-3-319-45677-5_32

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  • DOI: https://doi.org/10.1007/978-3-319-45677-5_32

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-45676-8

  • Online ISBN: 978-3-319-45677-5

  • eBook Packages: EnergyEnergy (R0)

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