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Direct Cu to Cu Bonding and Other Alternative Bonding Techniques in 3D Packaging

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Book cover 3D Microelectronic Packaging

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 57))

Abstract

This chapter provides insights into direct Cu to Cu bonding and summarizes several critical empirical results. After comparing the solder-less Cu–Cu bonding with the solder-based bonding, we introduce various Cu-Cu stacking/bonding schemes for different three-dimensional (3D) integration applications. We then review various methods of low-temperature Cu–Cu bonding including: (a) thermo-compression bonding (diffusion bonding), (b) Cu-Cu bonding with passivation capping layers, (c) surface activated bonding (SAB), and (d) alternative bonding methods (Cu/dielectric hybrid bonding and Cu–Cu insertion bonding). The effects of surface activation, surface microstructures and characteristics, and surface passivation for Cu–Cu bonding are highlighted and discussed to understand how the bonding behavior depends on Cu surface cleanness, diffusion, temperature, compression pressure, and bonding atmosphere. Lastly, we introduce the commercial equipment for Cu–Cu bonding for high-volume manufacturing briefly and summarize with recommendations for future directions. 

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Notes

  1. 1.

    Process time targets depend on stacking process, e.g., die-to-die (D2D) = chip-to-chip (C2C) and die-to-wafer (D2W) = chip-to-wafer (C2W) or wafer-to-wafer (W2W) processes, equipment/process throughput and manufacturing models. For Cu-Cu process to be viable in manufacturing, it needs to offer new capabilities and/or lower cost versus established solder-based processes.

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Acknowledgement

The editors would like to thank Hualiang Shi from Intel Corporation for his critical review of this Chapter.

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Authors and Affiliations

  1. The University of Tokyo, Tokyo, Japan

    Tadatomo Suga & Ran He

  2. Intel Corporation, Chandler, AZ, USA

    George Vakanas

  3. IMEC Consortium, Leuven, Belgium

    Antonio La Manna

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  1. Tadatomo Suga
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Correspondence to Tadatomo Suga .

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  1. Intel Corporation, Chandler, Arizona, USA

    Yan Li

  2. Intel Corporation, Chandler, Arizona, USA

    Deepak Goyal

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Suga, T., He, R., Vakanas, G., La Manna, A. (2017). Direct Cu to Cu Bonding and Other Alternative Bonding Techniques in 3D Packaging. In: Li, Y., Goyal, D. (eds) 3D Microelectronic Packaging. Springer Series in Advanced Microelectronics, vol 57. Springer, Cham. https://doi.org/10.1007/978-3-319-44586-1_6

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  • DOI: https://doi.org/10.1007/978-3-319-44586-1_6

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