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Microstructural and Reliability Issues of TSV

  • Praveen Kumar
  • Indranath Dutta
  • Zhiheng HuangEmail author
  • Paul Conway
Chapter
Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 57)

Abstract

The copper pumping problem exemplifies the complex reliability issues still to be resolved for TSV structures. From a materials science perspective the reliability issues presented by TSVs are linked to manufacturing processes and the resultant microstructure formed. Routine finite element-based reliability studies that treat the TSV filler as an isotropic and homogeneous material are not capable of providing a sufficiently thorough explanation of the observed copper extrusion/intrusion behavior. Rather, the material behavior and properties at multiple scales are required as the input data for effective reliability analysis of three-dimensional TSV stacked ICs. Such 3-D ICs also push the scale of materials to a limit where the anisotropy of material properties, recovery, recrystallization, and time-dependent phase morphological evolution further complicate reliability issues. This chapter reviews both experimental and modeling approaches that address the microstructural and reliability issues of TSVs. Crystal plasticity-based finite element method and phase field crystal method with an inherently multiscale nature are identified as promising modeling techniques to enable atomistically informed reliability analysis of TSVs.

Keywords

Hydrostatic Stress Void Growth Interfacial Shear Stress Reliability Issue Body Center Cubic 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgements

The editors would like to thank Prof. Tengfei Jiang from University of Central Florida for her critical review of this chapter. The authors (PK and ID) acknowledge financial support for some of the reported work by the National Science Foundation (DMR-0513874 and DMR-1309843), Cisco Research Council, and the Semiconductor Research Corporation. The contributions of, and collaborations with several colleagues (Dr. Lutz Meinshausen, formerly of Washington State University, and currently at Global Foundries, Dresden, Germany; Dr. Tae-Kyu Lee, formerly of Cisco Systems, and currently at Portland State University; Dr. Ravi Mahajan of Intel Corporation; Dr. Vijay Sarihan of Freescale Semiconductor, and Professor Muhannad Bakir of Georgia Tech) are gratefully acknowledged. The assistance of current and former colleagues (Dr. Hanry Yang of Washington State University, and Dr. Zhe Huang, formerly of Washington State University, and currently at Seagate Technologies) with the literature survey is also gratefully acknowledged. The author (ZH) acknowledges financial support for his research by the Pearl River Science and Technology Nova Program of Guangzhou under grant no. 2012J2200074, the National Natural Science Foundation of China (NSFC) under grant no. 51004118, and Guangdong Natural Science Foundation under grant no. 2015A030312011. The author (ZH) also acknowledges useful discussions with Dr. F. Roters of Max Planck Institute for Iron Research on the CPFE method and Prof. N. Provatas of McGill University on phase crystal models.

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Copyright information

© Springer International Publishing Switzerland 2017

Authors and Affiliations

  • Praveen Kumar
    • 1
  • Indranath Dutta
    • 2
  • Zhiheng Huang
    • 3
    Email author
  • Paul Conway
    • 4
  1. 1.Department of Materials EngineeringIndian Institute of ScienceBangaloreIndia
  2. 2.School of Mechanical and Materials EngineeringWashington State UniversityPullmanUSA
  3. 3.School of Materials Science and EngineeringSun Yat-sen UniversityGuangzhouChina
  4. 4.The Wolfson School of Mechanical, Electrical and Manufacturing EngineeringLoughborough UniversityLoughboroughUK

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