Abstract
In this section, we present a general survey of the theories and models that have been used to describe dielectric breakdown in amorphous thin films. The fundamental concepts for each theory are presented as initially proposed by the authors. Some of the models explained in this section include the E, 1/E, \( \sqrt{E} \), power-law, and the metal-catalyzed failure model. Commentary on the limitations for each model is provided. In the latter part of this chapter, we will discuss the most recent models for describing reliability trends in contemporary interconnect structures that employ low-κ nano-porous films. A general comparison between model predictions at low field is presented.
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Borja, J.P., Lu, TM., Plawsky, J. (2016). General Theories. In: Dielectric Breakdown in Gigascale Electronics. SpringerBriefs in Materials. Springer, Cham. https://doi.org/10.1007/978-3-319-43220-5_2
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DOI: https://doi.org/10.1007/978-3-319-43220-5_2
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