Abstract
This chapter reviews LEDs using semiconductor materials other than Si. The first example is gallium phosphide (GaP), which is indirect transition-type semiconductors, as is the case of Si. The second one is zinc oxide (zinc oxide). Although it is a direct transition-type semiconductor, it has been difficult to form a p-type crystal in this material for highly efficient LEDs by conventional technologies.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
M. Gershenzon, R.M. Mikulyak, Solid-State Electron. 5, 313 (1962)
D.G. Thomas, M. Gershenzon, F.A. Trumbore, Phys. Rev. 133, A269 (1964)
R. Logan, H. White, W. Wiegmann, Solid-State Electron. 14, 55 (1971)
J. Jayson, R. Bachrach, P. Dapkus, N. Schumaker, Phys. Rev. B 6, 2357 (1972)
J.-H. Kim, T. Kawazoe, M. Ohtsu, Adv. Opt. Technol. 2015, 236014 (2015)
K. Lohnert, E. Kubalek, Physica Status Solidi (a) 80, 173 (1983)
T. Kawabata, S. Koike, Appl. Phys. Lett. 43, 490 (1983)
K. Zdansky, J. Zavadil, D. Nohavica, S. Kugler, J. Appl. Phys. 83, 7678 (1998)
J.H. Kim, T. Kawazoe, M. Ohtsu, Appl. Phys. A 121, 1395 (2015)
R. Jankowiak, R. Richert, H. Bassler, J. Phys. Chem. 89, 4569 (1985)
W. Kohler, J. Meiler, J. Friedrich, Phys. Rev. B 35, 4031 (1987)
A. Hoglund, C. Castleton, S. Mirbt, Phys. Rev. B 77, 113201 (2008)
K. Takahashi, M. Katori, M. Naruse, T. Kawazoe, M. Ohtsu, Abstract of 2015 autumn meeting of the physical society of Japan, September 2015, Osaka, Japan, Paper number 18aCR-3
Y.-S. Choi, J.-W. Kang, D.-K. Hwang, S.-J. Park, IEEE Trans. Electron Devices 57, 26 (2010)
D. Seghier, H.P. Gislason, J. Mater. Sci. Mater. Electron 19, 687 (2008)
A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtsni, T. Makino, M. Sumiya, K. Ohtani, S.F. Chichibu, S. Fuku, Y. Segawa, H. Ohno, H. Koinuma, M. Kawasaki, Nat. Mater. 4, 42 (2005)
W.Z. Xu, Z.Z. Ye, Y.J. Zeng, L.P. Zhu, B.H. Zhao, L. Jiang, J.G. Lu, H.P. He, S.B. Zhang, Appl. Phys. Lett. 88, 173506 (2006)
Z.P. Wei, Y.M. Lu, D.Z. Shen, Z.Z. Zhang, B. Yao, B.H. Li, J.Y. Zhang, D.X. Zhao, X.W. Fan, Z.K. Tang, Appl. Phys. Lett. 90, 042113 (2007)
J. Kong, S. Chu, M. Olmedo, L. Li, Z. Yang, J. Liu, Appl. Phys. Lett. 93, 132113 (2008)
A. Nakagawa, T. Abe, S. Chiba, H. Endo, M. Meguro, Y. Kashiwaba, T. Ojima, K. Aota, I. Niikura, Y. Kashiwaba, T. Fujiwara, Phys. Status Solidi C 6, S119 (2009)
F. Sun, C.X. Shan, B.H. Li, Z.Z. Zhang, D.Z. Shen, Z.Y. Zhang, D. Fan, Opt. Lett. 36, 499 (2011)
Z.Q. Chen, T. Sekiguchi, X.L. Yuan, M. Maekawa, A. Kawasuso, J. Phys.: Condens. Matter 16, S293 (2004)
K. Kitamura, T. Kawazoe, M. Ohtsu, Appl. Phys. B 107, 293 (2012)
T. Sekiguchi, S. Miyashita, K. Obara, T. Shishido, N. Sakagami, J. Cryst. Growth 214/215, 72 (2000)
Ü. Özgur, Y.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, H. Morkoç, J. Appl. Phys. 98, 041301 (2005)
M.S. Kim, K.G. Yim, J.Y. Leem, D.Y. Lee, J.S. Kim, J.S. Kim, J. Phys. Soc. 58, 821 (2011)
H. Mach, C.R. Middaugh, Anal. Biochem. 222, 323 (1994)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2016 Springer International Publishing Switzerland
About this chapter
Cite this chapter
Ohtsu, M. (2016). Light Emitting Diodes Fabricated Using Other Crystals. In: Silicon Light-Emitting Diodes and Lasers. Nano-Optics and Nanophotonics. Springer, Cham. https://doi.org/10.1007/978-3-319-42014-1_7
Download citation
DOI: https://doi.org/10.1007/978-3-319-42014-1_7
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-42012-7
Online ISBN: 978-3-319-42014-1
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)