Abstract
This chapter reviews infrared Si lasers fabricated by using DPPs and capable of continuous-wave operation at room temperature. After describing basic devices that have been experimentally demonstrated, devices having an ultralow threshold current density are reviewed. In addition, the values of optical amplification quantities are estimated accurately for achieving further improvements in lasing performance. Finally, novel devices that emit high output optical power are demonstrated.
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Ohtsu, M. (2016). Infrared Lasers Using Silicon Crystal. In: Silicon Light-Emitting Diodes and Lasers. Nano-Optics and Nanophotonics. Springer, Cham. https://doi.org/10.1007/978-3-319-42014-1_5
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DOI: https://doi.org/10.1007/978-3-319-42014-1_5
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