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Applications of GFIS in Semiconductors

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Helium Ion Microscopy

Part of the book series: NanoScience and Technology ((NANO))

Abstract

Electron beam and ion beam based techniques such as SEM , TEM, and FIB are used extensively by the semiconductor industry to provide analytical, metrology, and debug capabilities for process development, manufacturing yield monitoring, and new product ramp. The unique imaging and nanomachining attributes of the helium and neon Gas Field Ionization Source (GFIS) technology may extend beyond what electron and gallium beams can achieve alone. In this chapter, emerging semiconductor applications for helium and neon GFIS are reviewed and the key imaging and nanomachining limitations and attributes of both are discussed.

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Acknowledgments

The authors would like to thank various external and internal collaborators and colleagues for their valuable discussions, outstanding equipment maintenance, sample preparation, cross-section, and TEM analysis support. In particular we would like to acknowledge: John Notte, Lewis Stern, Dave Ferranti, and Shawn McVey from Carl Zeiss Microscopy; Andras Vladar and Kate Klein from NIST; Philip Rack from U. of Tennessee in Knoxville; and Roy Hallstein, Darryl Shima, Paul Hack, Laxa Patel, Yuval Greenzweig, Chris Scheffler, and Waqas Ali from Intel Corporation.

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Authors and Affiliations

  1. Intel Corporation, 2200 Mission College Blvd., Santa Clara, CA, 95054, USA

    Shida Tan & Rick Livengood

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  1. Shida Tan
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  2. Rick Livengood
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Correspondence to Shida Tan .

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Editors and Affiliations

  1. Inst. for Ion Beam Physics and Materials Research, Hemholtz-Zentrum Dresden-Rossendorf, Dresden, Germany

    Gregor Hlawacek

  2. Physics of Supramolecular Systems and Surfaces, Bielefeld University, Bielefeld, Germany

    Armin Gölzhäuser

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Tan, S., Livengood, R. (2016). Applications of GFIS in Semiconductors. In: Hlawacek, G., Gölzhäuser, A. (eds) Helium Ion Microscopy. NanoScience and Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-41990-9_19

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