Abstract
The idea of using backscattered helium particles to access chemical information on the surface in a helium ion microscope came up right from the early days of this relatively young imaging technique. From the basic principles of backscattering spectrometry, ion solid interaction and particle detection it became clear rapidly that this attempt will suffer many difficulties in terms of technical realization and physical limitations. This chapter is about describing those difficulties and working out different scenarios of how to apply backscattering spectrometry to the HIM anyways. It will be shown that an actual technical realization exist enabling laterally resolved chemical analysis in a HIM with a resolution down to \(55\,\)nm.
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Notes
- 1.
The sum of information on number of layers, layer thicknesses and the particular elemental composition of each layer is referred as target model.
- 2.
- 3.
Despite the surface peaks, LEIS spectra also contain a background that is caused by backscattered neutrals being re-ionized during scattering or on their way back towards the surface (see also [30]).
- 4.
The factor of 2 assumes a constant sputter yield and thus a constant layer removal rate, independent on the actual areal density of the layer.
- 5.
The sputter yield was extracted from TRIM simulations [8] evaluating a minimum of \(1 \times 10^{6}\) incident ions.
- 6.
In the simulation a dead layer of \(15\,\mathrm{nm}\) thickness was assumed.
- 7.
See also Sect. 12.5.3 for details on this sample.
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Acknowledgments
Financial support from the Bundesministerium für Wirtschaft und Energie (BMWi) (Grant 03ET7016) is acknowledged. The authors thank R.Aniol (HZDR) for manufacturing of the mechanical parts for the ToF setup and P. Bauer (JKU Linz) for providing TRBS simulations.
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Heller, R., Klingner, N., Hlawacek, G. (2016). Backscattering Spectrometry in the Helium Ion Microscope: Imaging Elemental Compositions on the nm Scale. In: Hlawacek, G., Gölzhäuser, A. (eds) Helium Ion Microscopy. NanoScience and Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-41990-9_12
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