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Nanofabrication pp 305–333Cite as

Nanoscale Pattern Transfer by Deposition

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Abstract

Although subtractive etching is the most used pattern transfer process, not all materials can be etched either by wet chemical or plasma. Metals in particular are difficult to etch by dry etching process. Though wet acids can etch metals, the isotropic nature of wet etch means it is difficult to obtain high resolution as well as high aspect ratio metallic structures. Pure physical sputtering such as the ion milling introduced in Chap. 7 is too slow and has stringent requirements on the mask. Therefore, etching alone cannot perform all the pattern transfer tasks. The other option is to transfer resist patterns by deposition. It is an additive process, i.e. adding materials through the resist pattern openings.

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Authors and Affiliations

  1. Suzhou Institute of Nano-Tech and Nano-Nanobionics (SINANO), Suzhou, China

    Zheng Cui

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  1. Zheng Cui
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Cui, Z. (2017). Nanoscale Pattern Transfer by Deposition. In: Nanofabrication. Springer, Cham. https://doi.org/10.1007/978-3-319-39361-2_8

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  • DOI: https://doi.org/10.1007/978-3-319-39361-2_8

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-39359-9

  • Online ISBN: 978-3-319-39361-2

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