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Ion Beam Modification of Solids pp 243–285Cite as

Damage Formation, Amorphization and Crystallization in Semiconductors at Elevated Temperatures

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Part of the book series: Springer Series in Surface Sciences ((SSSUR,volume 61))

Abstract

This chapter focusses on damage build up, amorphization and crystallization processes in a range of semiconductors under irradiation conditions close to the critical temperature for amorphization where small changes in ion fluence, ion flux, ion mass and irradiation temperature have a strong effect on the damage level and nature of the residual disorder. Layer-by-layer amorphization (IBIIA) and ion-beam-induced epitaxial crystallization (IBIEC) phenomena are also highlighted as well as anomalous processes such as ion-induced swelling, porosity and surface erosion.

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  1. Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601, Australia

    James S. Williams

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  1. Institute of Solid State Physics, Friedrich-Schiller-University Jena, Jena, Germany

    Werner Wesch

  2. Institute of Solid State Physics, Friedrich-Schiller-University, Jena, Germany

    Elke Wendler

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Williams, J.S. (2016). Damage Formation, Amorphization and Crystallization in Semiconductors at Elevated Temperatures. In: Wesch, W., Wendler, E. (eds) Ion Beam Modification of Solids. Springer Series in Surface Sciences, vol 61. Springer, Cham. https://doi.org/10.1007/978-3-319-33561-2_6

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