Abstract
In this chapter damage formation and amorphisation in various semiconductors are reviewed with special focus on primary processes. Trends are shown how the parameters during ion implantation influence damage formation and to what extend the results for the various semiconductors can be generalised. It is shown that three groups of semiconductors can be identified. One group of materials exhibits a continuous transition towards amorphisation at sufficiently low temperatures. In these materials comparable mechanisms of defect formation are observed provided the implantation temperature is similarly close to or below the corresponding critical temperature of amorphisation, T c, the concept of which is discussed in this chapter. In a second group, amorphisation can be achieved at low temperatures only and only by secondary processes resulting in a discontinuous transition to amorphisation. And in a third group of materials amorphisation by ion implantation is not observed even not at low temperatures for moderate ion fluences which do not significantly alter the stoichiometry of the material. Various models are applied for describing the damage evolution. This represents a further step towards a prediction of damage to be expected for certain irradiation conditions in the corresponding materials.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
J.A. Davies, Mater. Chem. Phys. 46, 111 (1996)
C.B. Yarling, J. Vac. Sci. Technol. A18, 1746 (2000)
G. Hobler, G. Otto, Mater. Sci. Semicond. Process. 6, 1 (2003)
K. Trachenko, J.M. Pruneda, E. Artacho, M.T. Dove, Phys. Rev. B 71, 184104 (2005)
E. Wendler, in AIP Conference Proceedings 1336, 2011, p. 621
H. Bernas (ed.), Material Science with Ion Beams (Springer, Berlin, 2010)
L. Pelaz, L.A. Marqués, J. Barbolla, J. Appl. Phys. 96, 5947 (2004)
W. Wesch, E. Wendler, C.S. Schnohr, Nucl. Instrum. Methods Phys. Res. B 277, 58 (2012)
T. Steinbach, J. Wernecke, P. Kluth, M.C. Ridgway, W. Wesch, Phys. Rev. B 84, 104108 (2011)
T. Steinbach, W. Wesch, Nucl. Instrum. Methods Phys. Res. B319, 112 (2014)
B. Schmidt, W. Wetzig (eds.), Ion Beams in Materials Processing and Analysis (Springer, Wien, 2013)
W.-K. Chu, J.W. Mayer, M.-A. Nicolet, Backscattering Spectrometry (Academic Press, New York, 1978)
G. Götz, K. Gärtner (eds.), High Energy Ion Beam Analysis of Solids (Akademie-Verlag, Berlin, 1988)
M. Nastasi, J.W. Mayer, Y. Wang, Ion Beam Analysis: Fundamentals and Applications (CRC Press, New York, 2014)
J.P. Biersack, J.F. Ziegler, The Stopping and Ranges of Ions in Matter, vol. 1 (Pergamon Press, Oxford, 1985)
K. Gärtner, Nucl. Instrum. Methods B 132, 147 (1997). and references therein
A. Turos, P. Jozwik, L. Nowicki, N. Sathish, Nucl. Instrum. Methods Phys. Res. 332, 50 (2014). and references therein
G. Götz, B. Gruska, Nucl. Instrum. Methods 194, 199 (1982)
W. Wesch, K. Gärtner, A. Jordanov, G. Götz, Nucl. Instrum. Methods Phys. Res. B 45, 446 (1990)
E. Bøgh, Can. J. Phys. 46, 653 (1968)
K. Schmid, Rad. Eff. 17, 201 (1973)
K. Gärtner, Nucl. Instrum. Methods Phys. Res. B 227, 522 (2005)
E. Albertazzi, M. Bianconi, G. Lulli, R. Nipoti, M. Cantino, Nucl. Instrum. Methods Phys. Res. B 118, 128 (1996)
A. Mazzone, Nucl. Instrum. Methods Phys. Res. B 34, 22 (1988)
E. Wendler, L. Wendler, Appl. Phys. Lett. 100, 192108 (2012)
C.W. Rischau, C.S. Schnohr, E. Wendler, W. Wesch, J. Appl. Phys. 109, 113531 (2011)
E. Wendler, O. Bilani, K. Gärtner, W. Wesch, F.D. Auret, K. Lorenz, E. Alves, Nucl. Instrum. Methods Phys. Res. B 267, 2708 (2009)
C.W. Rischau, C.S. Schnohr, E. Wendler, W. Wesch, Nucl. Instrum. Methods Phys. Res. B 272, 338 (2012)
E. Wendler, W. Wesch, AYu. Azarov, N. Catarino, A. Redondo-Cubero, E. Alves, K. Lorenz, Nucl. Instrum. Methods Phys. Res. B 307, 394 (2013)
K. Lorenz, E. Wendler, in Ion Implantation, ed. by M.S. Goorsky (InTech, Rijeka, 2012)
E. Wendler, T. Opfermann, P.I. Gaiduk, J. Appl. Phys. 82, 5965 (1997)
F.F. Morehead Jr, B.L. Crowder, Rad. Eff. 6, 27 (1970)
E. Wendler, A. Heft, W. Wesch, Nucl. Instrum. Methods Phys. Res. B 141, 105 (1998)
W.J. Weber, Y. Zhang, L. Wang, Nucl. Instr. Meth. B 277, 1 (2012)
J.R. Dennis, E.B. Hale, J. Appl. Phys. 49, 1119 (1978)
R.D. Goldberg, J.S. Williams, R.G. Elliman, Nucl. Instrum. Methods Phys. Res. B 106, 242 (1995)
E. Wendler, N. Dharmarasu, E. Glaser, Nucl. Instrum. Methods Phys. Res. B 160, 257 (2000)
E. Wendler, B. Breeger, C. Schubert, W. Wesch, Nucl. Instrum. Methods Phys. Res. B 147, 155 (1999)
T.E. Hayes, O.W. Holland, Appl. Phys. Lett. 59, 452 (1991)
R.A. Brown, J.S. Williams, Phys. Rev. B 64, 155202 (2001)
A. Turos, A. Stonert, B. Breeger, E. Wendler, W. Wesch, R. Fromknecht, Nucl. Instrum. Methods Phys. Res. B 148, 401 (1999)
AYu. Kuznetsov, J. Wong-Leung, A. Hallén, C. Jagadish, B.G. Svenson, J. Appl. Phys. 94, 7112 (2003)
F. Gao, W.J. Weber, J. Appl. Phys. 94, 4348 (2003)
G. Litrico, G. Izzo, L. Calcagno, F. La Via, G. Voti, Diam. Relat. Mater. 19, 39 (2009)
H. Hofsäss, S. Winter, S.G. Jahn, U. Wahl, E. Recknagel, ISOLDE Collaboration, Nucl. Instrum. Methods Phys. Res. B63, 83 (1992)
A. Pillukat, K. Karsten, P. Ehrhart, Phys. Rev. B53, 7823 (1996)
H. Hausmann, P. Ehrhart, Phys. Rev. B51, 17542 (1995)
U.G. Akano, I.V. Mitchell, F.R. Shepherd, Appl. Phys. Lett. 62, 1670 (1993)
E. Wendler, W. Wesch, G. Götz, Nucl. Instrum. Methods Phys. Res. B 52, 57 (1990)
W. Wesch, E. Wendler, N. Dharmarasu, Nucl. Instrum. Methods Phys. Res. B 175–177, 257 (2001)
U.G. Akano, I.V. Mitchell, F.R. Shepherd, C.J. Miner, Can. J. Phys. 70, 789 (1992)
J. Linnros, R.G. Elliman, W.L. Brown, J. Mater. Res. 3, 1208 (1988)
V. Heera, T. Henkel, R. Kögler, W. Skorupa, Phys. Rev. B 52, 15776 (1995)
R. Lauck, E. Wendler, W. Wesch, Nucl. Instrum. Methods Phys. Res. B 242, 484 (2006)
K. Jin, Y. Zhang, H. Xue, Z. Zhu, W.J. Weber, Nucl. Instrum. Methods Phys. Res. B 307, 65 (2013)
W. Wesch, E. Wendler, G. Götz, Nucl. Instrum. Methods Phys. Res. B 22, 532 (1987)
E. Wendler, G. Peiter, J. Appl. Phys. 87, 7679 (2000)
E. Wendler, M. Schilling, L. Wendler, Vacuum 105, 102 (2014)
G. Carter, Rad. Eff. 100, 281 (1986)
P. Partyka, R.S. Averback, D.V. Frobes, J.J. Coleman, P. Ehrhart, W. Jäger, Appl. Phys. Lett. 65, 421 (1994)
E. Glaser, T. Fehlhaber, B. Breeger, Nucl. Instrum. Methods Phys. Res. B 148, 426 (1999)
E. Wendler, A. Stonert, A. Turos, W. Wesch, Nucl. Instrum. Methods Phys. Res. B 307, 377 (2013)
W.J. Weber, L.M. Wang, N. Yu, N.J. Hess, Mater. Sci. Eng. A 253, 62 (1998)
C. Ascheron, H. Neumann, Cryst. Res. Technol. 22, 1493 (1987)
C. Ascheron, A. Schindler, R. Flagmeyer, G. Otto, Nucl. Instrum. Methods Phys. Res. B 36, 163 (1989)
W. Bolse, Nucl. Instrum. Methods Phys. Res. B 148, 83 (1999)
E. Wendler, Th Bierschenk, W. Wesch, E. Friedland, J.B. Malherbe, Nucl. Instrum. Methods Phys. Res. B 268, 2996 (2010)
N. Hecking, K.F. Heidemann, E. TeKaat, Nucl. Instrum. Methods Phys. Res. B 15, 760 (1986)
E. Wendler, P. Schoeppe, T. Bierschenk, S. Milz, W. Wesch, N.G. van der Berg, E. Friedland, J.B. Malherbe, Nucl. Instrum. Methods Phys. Res. B 286, 93 (2012)
C.S. Schnohr, E. Wendler, K. Gärtner, W. Wesch, K. Ellmer, J. Appl. Phys. 99, 123511 (2006)
M. Bianconi, G.G. Bentini, M. Chiarini, P. De Nicola, G.B. Montanari, A. Menin, A. Nubile, S. Sugliani, Nucl. Instrum. Methods Phys. Res. B 268, 3451 (2010)
A.G. Cullis, P.W. Smith, D.C. Jacobson, J.M. Poate, J. Appl. Phys. 69, 1279 (1991)
H.H. Tan, C. Jagadish, J.S. Williams, J. Zou, D.J.H. Cockayne, A. Sikorski, J. Appl. Phys. 77, 87 (1995)
J.L. Klatt, R.S. Averback, D.V. Forbes, J.J. Coleman, Phys. Rev. B 48, 17629 (1993)
B. Breeger, E. Wendler, Ch. Schubert, W. Wesch, Nucl. Instrum. Methods Phys. Res. B 148, 468 (1999)
E. Wendler, B. Breeger, W. Wesch, Nucl. Instrum. Methods Phys. Res. B 175–177, 78 (2001)
E. Wendler, B. Breeger, W. Wesch, Nucl. Instrum. Methods Phys. Res. B 175–177, 83 (2001)
A. Stonert, A. Turos, L. Novicki, B. Breeger, E. Wendler, W, Wesch, Mod. Phys, Lett. B15, 1437 (2001)
E. Wendler, in AIP Conference Proceedings 680, Melville, New York, 2003, p. 670
B. Breeger, E. Wendler, unpublished
A. Gaber, H. Zillgen, P. Ehrhart, P. Partyka, R.S. Averback, J. Appl. Phys. 82, 5348 (1997)
C. Liu, B. Mensching, M. Zeitler, K. Volz, B. Rauschenbach, Phys. Rev. B 57, 2530 (1998)
E. Alves, M.F. da Silva, J.C. Soares, R. Vianden, J. Bartels, A. Kozanecki, Nucl. Instrum. Methods Phys. Res. B 147, 383 (1999)
S.O. Kucheyev, J.S. Williams, C. Jagadish, J. Zou, G. Li, Phys. Rev. B 62, 7510 (2000)
W. Jiang, W.J. Weber, S. Thevuthasan, J. Appl. Phys. 87, 7671 (2000)
E. Wendler, A. Kamarou, E. Alves, K. Gärtner, W. Wesch, Nucl. Instrum. Methods Phys. Res. B 206, 1028 (2003)
S.O. Kucheyev, A. Yu. Azarov, A. Titov, P.A. Karaseov, T.M. Kuchumova, J. Phys. D: Appl. Phys., 085309 (2009)
S. Charnvanichborikarn, M.T. Myers, L. Shao, S.O. Kucheyev, Scripta Mater. 67, 205 (2012)
AYu. Azarov, A.I. Titov, S.O. Kucheyev, J. Appl. Phys. 108, 033505 (2010)
F. Gloux, T. Wojtowicz, P. Ruterana, K. Lorenz, E. Alves, J. Appl. Phys. 100, 073520 (2006)
P. Ruterana, B. Lacroix, K. Lorenz, J. Appl. Phys. 109, 013506 (2011)
K. Pagowska, R. Ratajczak, A. Stonert, L. Nowicki, A. Turos, vacuum 83, S145 (2009)
M. Katsikini, F. Pinakidou, E.C. Paloura, E. Wendler, W. Wesch, R. Manzke, J. Phys. 190, 012065 (2009). (Conference series)
B. Lacroix, S. Leclerc, A. Declémy, K. Lorenz, E. Alves, P. Ruterana, Europhys. Lett. 96, 46002 (2011)
A. Turos, Rad. Eff. Defects Solids 168, 431 (2013)
K. Filintoglou, P. Kavouras, M. Katsikini, J. Arvanitidis, D. Christofilos, S. Ves, E. Wendler, W. Wesch, Thin Solid Films 531, 152 (2013)
M. Ishimaru, Y. Zhang, W.J. Weber, J. Appl. Phys. 106, 053513 (2009)
C. Ronning, M. Dalmer, M. Uhrmacher, M. Restle, U. Vetter, L. Ziegeler, H. Hofsäss, T. Gehrke, K. Järrendahl, R.F. Davies, ISOLDE Collaboration, J. Appl. Phys. 87, 2149 (2000)
E. Wendler, W. Wesch, Nucl. Instrum. Methods Phys. Res. B 242, 562 (2006)
K. Lorenz, E. Alves, E. Wendler, O. Bilani, W. Wesch, M. Hayes, Appl. Phys. Lett. 87, 191904 (2005)
AYu. Azarov, E. Wendler, AYu. Kuznetsov, B.G. Svenson, Appl. Phys. Lett. 104, 052101 (2014)
L.T. Chadderton, Radiat. Eff. 8, 77 (1971)
G. Perillat-Marceroz, P. Gergaud, P. Marotel, St. Brochen, P.H. Jouneau, G. Feuillet, J. Appl. Phys. 109, 023513 (2011)
AYu. Azarov, S.O. Kucheev, A.I. Titov, P.A. Karaseov, J. Appl. Phys. 102, 083547 (2007)
S.O. Kucheyev, J.S. Williams, C. Jagadish, J. Zou, C. Evans, A.J. Nelson, A.V. Hamza, Phys. Rev. B 67, 094115 (2003)
G. Leo, A.V. Drigo, A. Traverse, Mater. Sci. Eng., B 16, 123 (1993)
G. Leo, M.O. Ruault, J. Appl. Phys. 73, 2234 (1993)
J.C. Bourgoin, J.W. Corbett, Radiat. Eff. 36, 157 (1978)
L.C. Kimerling, Solid-State Electron. 21, 1391 (1978)
H. Kerkow, V.X. Quang, B. Selle, J. Cryst. Growth 117, 677 (1992)
K. Gärtner, T. Clauß, Nucl. Instrum. Methods Phys. Res. B 268, 155 (2010)
V.I. Panov, A.A. Kharkov, Semiconductors 30, 444 (1996)
C.-Y. Yeh, Z.L. Lu, S. Froyen, A. Zunger, Phys. Rev. B 46, 10086 (1992)
H.M. Naguib, R. Kelly, Radiat. Eff. 25, 1 (1975)
K. Trachenko, J. Phys. Condens. Matter 16, R1491 (2004)
J.J. Gilman, J. Phys. D Appl. Phys. 41, 074020 (2008)
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2016 Springer International Publishing Switzerland
About this chapter
Cite this chapter
Wendler, E., Wesch, W. (2016). Primary Processes of Damage Formation in Semiconductors. In: Wesch, W., Wendler, E. (eds) Ion Beam Modification of Solids. Springer Series in Surface Sciences, vol 61. Springer, Cham. https://doi.org/10.1007/978-3-319-33561-2_5
Download citation
DOI: https://doi.org/10.1007/978-3-319-33561-2_5
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-33559-9
Online ISBN: 978-3-319-33561-2
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)